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SI4952DY-T1-GE3-VB Product details

Product introduction:

Product Introduction (SI4952DY-T1-GE3)

SI4952DY-T1-GE3 is a dual N-channel MOSFET produced by Vishay, using SOP8 package, designed for high-efficiency power management and power switching applications. The device has a low on-resistance (RDS(ON)), which can reduce energy loss and improve the efficiency of the overall system. The drain-source voltage (VDS) of SI4952DY-T1-GE3 is 20V, the gate-source voltage (VGS) is ±12V, the switching threshold voltage (Vth) ranges from 0.5V to 1.5V, and the maximum leakage current (ID) is 7.1A. It uses Trench technology and has a low RDS(ON) value, which is particularly suitable for low-voltage, high-efficiency power switches, load switches and power management systems.

This product is particularly suitable for high-efficiency power conversion applications that require lower threshold voltage and low on-resistance, such as battery management, power tools, power adapters, LED drivers, and various high-efficiency DC-DC converters.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A 19mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
Detailed parameter description

- **Model**: SI4952DY-T1-GE3
- **Package**: SOP8
- **Configuration**: Dual-N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Switching threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 26mΩ @VGS = 4.5V
- 19mΩ @VGS = 10V
- **Maximum leakage current (ID)**: 7.1A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C

Domain and module applications:

Applications and modules

SI4952DY-T1-GE3 is a low voltage, high efficiency dual N-channel MOSFET suitable for multiple power switching and power management applications. Its low threshold voltage (Vth) and low RDS(ON) make it very suitable for high efficiency conversion and low power consumption systems. Here are some typical applications and modules:

1. **DC-DC converter**
SI4952DY-T1-GE3 has low RDS(ON) characteristics and low threshold voltage, so it is very suitable for use in DC-DC converters, especially under low voltage conversion and high frequency operation. This makes it excellent in 5V, 12V, 15V power conversion applications, can improve system efficiency and reduce power loss, and is commonly used in portable devices, communication equipment and high efficiency power modules.

2. **Power management system**
This MOSFET is widely used in power management systems, especially for power switching and current control of battery-powered devices. Due to its low on-resistance, SI4952DY-T1-GE3 can effectively reduce power loss and improve conversion efficiency. It is commonly used in smartphones, power adapters, portable batteries and various power modules to help optimize power efficiency and extend battery life.

3. **LED drive circuit**
In the LED drive circuit, SI4952DY-T1-GE3 can provide stable current control and efficient power conversion, especially suitable for low-power LED lighting, backlight and display applications. Its low on-resistance and low switching threshold voltage make this MOSFET an ideal choice in LED drive circuits, which can improve system efficiency, reduce heat generation, and optimize energy utilization of LED lighting systems.

4. **Load switch and battery protection**
In the load switch and battery protection circuit, SI4952DY-T1-GE3 provides low power loss and high-efficiency switching operation, which can effectively protect load devices from overcurrent or overvoltage damage. It is widely used in battery management systems, especially in battery management systems for smartphones, power tools and portable devices, for battery protection and power switching, ensuring that the device can operate efficiently and stably when the load changes.

5. **Power Tools and Power Toys**
This dual N-channel MOSFET is widely used in power tools and power toys due to its low on-resistance and high leakage current carrying capacity. It can drive the motor efficiently, provide longer use time, and effectively reduce battery loss. Its low switching loss allows power tools to operate longer under high load.

6. **Automotive Electronics and Energy Management**
In the field of automotive electronics, SI4952DY-T1-GE3 can be used in battery management systems, electric vehicle (EV) control systems and other on-board electronic devices, especially for high-efficiency power management. Its low on-resistance and high current carrying capacity make it very suitable for battery management, load switching, charging and battery protection systems, helping to improve the overall automotive battery management efficiency.

7. **Consumer Electronics**
SI4952DY-T1-GE3 is widely used in consumer electronics, especially in power adapters, charging systems, portable battery devices and other fields. Due to its low power consumption and high efficiency, it helps to extend battery life and improve the operating efficiency of the device, and is widely used in portable devices, smart home devices and other fields.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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