Product introduction:
Product Introduction (SI4936BDY-T1-E3)
SI4936BDY-T1-E3 is a dual N-channel MOSFET launched by Vishay. It adopts SOP8 package and is designed for high-efficiency power switching and power management applications. It has a low on-resistance (RDS(ON)), which can reduce power loss and improve the efficiency of the overall system. The drain-source voltage (VDS) of SI4936BDY-T1-E3 is 30V, the gate-source voltage (VGS) is ±20V, the switching threshold voltage (Vth) is 1.7V, and the maximum leakage current (ID) is 6.8A (forward) and 6.0A (reverse). Using Trench technology, the device has a low on-resistance and efficient switching performance, and is suitable for a variety of low-voltage and high-efficiency applications, such as DC-DC converters, power management systems, load switches, and LED drive circuits.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI4936BDY-T1-E3
- **Package**: SOP8
- **Configuration**: Dual-N+N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Switching threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 26mΩ @VGS = 4.5V
- 22mΩ @VGS = 10V
- **Maximum leakage current (ID)**:
- 6.8A (forward)
- 6.0A (reverse)
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
Domain and module applications:
Applications and modules
SI4936BDY-T1-E3 is a dual N-channel MOSFET with low RDS(ON) and efficient switching characteristics, making it excellent in power management and power switching applications in multiple fields. Here are some typical applications and modules:
1. **DC-DC converter**
SI4936BDY-T1-E3 is widely used in DC-DC converters, especially for low voltage conversion and high-efficiency power supply design. Due to its low on-resistance (RDS(ON)) and high switching frequency characteristics, it can improve conversion efficiency and reduce power loss, and is often used in voltage conversion modules such as 5V and 12V. It can be used in power management systems for portable devices, communication systems, and battery-powered devices.
2. **Power management and voltage regulation system**
This device is widely used in power management systems, especially in voltage regulation power supplies that require efficient switching operations. Due to its low on-resistance, SI4936BDY-T1-E3 helps reduce power loss and improve power efficiency, and is commonly found in power modules such as mobile devices, computers, and power adapters. Its high efficiency makes it an ideal choice for adapters, battery charging, and energy conversion systems.
3. **LED driver circuit**
In the LED driver circuit, SI4936BDY-T1-E3 provides stable current control through its efficient switching performance and low RDS(ON) characteristics. This MOSFET is suitable for various types of LED drivers, including those used in backlight displays, lighting systems, and billboard displays. Its low power consumption and high efficiency ensure that the LED driver can provide long-term, stable lighting effects while reducing energy consumption.
4. **Load switch and battery protection**
In the load switch and battery protection circuit, SI4936BDY-T1-E3 provides an ideal switching solution. It can effectively control the on and off of the power supply and prevent overcurrent or overvoltage from damaging the load or battery. It is widely used in portable devices, battery management systems, smart power supplies and automotive battery protection systems.
5. **Power tools and electric toys**
This dual N-channel MOSFET is widely used in power tools and electric toys due to its high leakage current (ID) capability, which can effectively control the start, stop, speed control and forward and reverse direction of the motor. Through efficient power conversion, it can also optimize battery life and reduce energy loss during battery charging.
6. **Automotive electronics and energy management**
In automotive electronic systems, SI4936BDY-T1-E3 can be used in modules such as battery management, energy distribution, load switching and motor drive. Due to its low power loss characteristics, it is very suitable for power and energy management systems in electric vehicles, hybrid vehicles, and other modern vehicles, which can improve overall system efficiency and safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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