Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
|
|
**SI4916DY-T1-E3-VB MOSFET Detailed Parameter Description**
- **Package Type**: SOP8 (small surface mount package, suitable for electronic devices with limited space and helps heat dissipation)
- **Configuration**: Half-bridge N+N channel configuration, suitable for applications that need to work in pairs and have symmetrical loads, such as motor drives, bridge power conversion, etc.
- **VDS (drain-source voltage)**: 30V, suitable for low-voltage power management and low-voltage power conversion applications, such as portable devices and small power modules.
- **VGS (gate-source voltage)**: ±20V, suitable for circuits that support ±20V gate drive.
- **Vth (threshold voltage)**: 1.7V, the on-voltage of the MOSFET is very low, suitable for low-voltage drive applications, and can ensure fast response.
- **RDS(ON)**:
- **12mΩ @VGS=4.5V**: Lower on-resistance at medium gate voltage, reducing power loss, suitable for power conversion applications requiring medium efficiency.
- **8mΩ @VGS=10V**: At higher gate voltage, on-resistance is further reduced, improving power conversion efficiency, very suitable for high-efficiency switching power supply systems.
- **ID (drain current)**: 8A, suitable for medium current loads, and can effectively drive loads with lower power requirements.
---
Domain and module applications：
**SI4916DY-T1-E3-VB MOSFET Application Fields and Modules**
1. **DC-DC Power Conversion Module**:
- **Power Converter**: The low RDS(ON) characteristics of SI4916DY-T1-E3-VB make it ideal for use in DC-DC converters. Especially in low voltage systems, such as 5V or 12V power modules, it is able to reduce heat and power loss while being highly efficient. Applications include providing a stable power supply for embedded systems and communication equipment.
- **Half-bridge Circuit**: Due to its half-bridge configuration, it is suitable for applications that require two sets of parallel switches, such as synchronous rectification power management, stepper motor control, etc.
2. **Motor Drive and Control**:
- **Stepper Motor Drive**: In the stepper motor drive circuit, SI4916DY-T1-E3-VB can be used as part of a half-bridge circuit to precisely control the motor rotation by controlling the current flowing to the motor windings. The low on-resistance ensures efficient operation of the motor drive circuit.
- **Servo motor and power tool drive**: This MOSFET is also widely used in the drive circuits of servo motors and power tools. The characteristics of low power consumption and high efficiency enable it to remain stable during long-term operation.
3. **Battery Management System (BMS)**:
- In the battery management system, SI4916DY-T1-E3-VB MOSFET can be used to control the charging and discharging process of the battery. Its low on-resistance and high switching speed make it suitable for battery protection circuits to prevent overcharging, over-discharging and other problems, ensuring the long-term reliability of the battery.
- In battery balancing and load management, SI4916DY-T1-E3-VB can be used as a power switch to ensure the high efficiency and safety of the battery system.
4. **LED drive circuit**:
- In LED drive applications, the low RDS(ON) characteristics of SI4916DY-T1-E3-VB help reduce power losses, especially in high current LED drive circuits. This can improve overall efficiency, reduce heat, and extend the life of the LED.
- It is suitable for LED backlight driving and high-power lighting applications, ensuring stable current and efficient power conversion.
5. **Automotive electronic system**:
- In automotive electronics, SI4916DY-T1-E3-VB can be used in many fields such as vehicle power management system, LED headlight drive system, electric seat adjustment, power battery system, etc. Its low voltage operating characteristics and efficient switching capability make it an ideal choice for vehicle DC-DC converters.
- For example, a battery charging management system using this MOSFET can achieve efficient energy conversion and battery management in electric vehicles (EVs).
6. **Consumer Electronics**:
- In portable devices such as smartphones, tablets and wearable devices, SI4916DY-T1-E3-VB is used for power management, load driving and other applications. Due to its low RDS(ON), it can efficiently drive the device power supply, extend the device's usage time, and improve the overall efficiency of the system.
- In addition, the efficient switching characteristics of MOSFET make it suitable for battery-powered devices to ensure maximum power conversion efficiency.
Through its low Vth, low RDS(ON) and moderate ID, SI4916DY-T1-E3-VB has excellent performance in various power conversion and motor control applications, especially suitable for systems requiring high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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