Product introduction：
Product Introduction (SI4911DY-T1-E3)
SI4911DY-T1-E3 is a dual P-channel MOSFET produced by Vishay, using SOP8 package, designed for low voltage and high efficiency power switching applications. The device has a low on-resistance (RDS(ON)), which can effectively reduce power loss in a variety of high power, low voltage applications. The drain-source voltage (VDS) of SI4911DY-T1-E3 is -20V, the gate-source voltage (VGS) is ±20V, the switching threshold voltage (Vth) is -1.2V, and the maximum leakage current (ID) is -8.9A. Its dual P+P-Channel design enables efficient current control under positive and negative voltages, which is particularly suitable for applications such as H-bridge circuits, motor drives, power management and load switches.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-P+P |
-20V |
|
-1.2V |
-8.9A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-P+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-P+P |
-20V |
|
-1.2V |
-8.9A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-P+P |
-20V |
|
-1.2V |
-8.9A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-P+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI4911DY-T1-E3
- **Package**: SOP8
- **Configuration**: Dual P+P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Switching threshold voltage (Vth)**: -1.2V
- **On-resistance (RDS(ON))**:
- 18mΩ @VGS = 4.5V
- 16mΩ @VGS = 10V
- **Maximum leakage current (ID)**: -8.9A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Applications and modules
SI4911DY-T1-E3 has a dual P-channel configuration, low on-resistance and high switching performance, making it excellent in multiple power management and load control applications. Here are some typical applications and modules:
1. **H-bridge circuit and motor drive**
Dual P-channel MOSFETs (such as SI4911DY-T1-E3) are very suitable for H-bridge circuit design, which is used for motor drive and control. Its unique configuration enables it to efficiently achieve motor forward and reverse control, and is widely used in power tools, electric fans, electric toys and automation equipment.
2. **Power management and load switching**
In power management systems, especially in load switching and voltage conversion circuits, SI4911DY-T1-E3 can be used to implement efficient power switching. Its low RDS(ON) value can reduce power loss, making it excellent in power conversion, voltage regulation and battery management applications, and is commonly found in mobile power supplies, smart device power management and communication equipment.
3. **Low voltage and high efficiency power supply design**
SI4911DY-T1-E3's -20V drain-source voltage and low on-resistance make it very suitable for high efficiency power supply design in low voltage environment. It can provide stable switching performance in low voltage and low power loss applications, and is widely used in battery-powered systems such as wearable devices, portable electronics and LED drive circuits.
4. **Switching power supply and DC-DC converter**
In DC-DC converters, MOSFETs are often used for high frequency switching operations. SI4911DY-T1-E3's fast switching response and low RDS(ON) value enable efficient power conversion in power modules, reduce losses and improve conversion efficiency. It is widely used in various voltage conversion circuits, especially in low voltage (such as 5V, 12V) power supply systems.
5. **Automotive electronics and load control**
In automotive electronic systems, SI4911DY-T1-E3 can be used for load switching and battery management. Through its low on-resistance and high current carrying capacity, it can efficiently control loads such as car batteries, electric windows, electric seats, etc., ensure stable operation of the system, and effectively reduce energy loss.
6. **Battery protection and overvoltage/overcurrent protection**
Due to its low on-resistance and reliable switching performance, SI4911DY-T1-E3 is suitable for overvoltage protection and overcurrent protection modules in battery management systems. Its stable working characteristics can help protect the battery from overvoltage, overcurrent and other faults, and improve the safety and service life of the battery.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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