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SI4856DY-T1-E3-VB Product details

Product introduction:

Product Introduction: SI4856DY-T1-E3

SI4856DY-T1-E3 is a single N-type MOSFET based on Trench technology, packaged in SOP8. It is mainly used in the field of low-voltage power switching, with efficient switching characteristics and low on-resistance. The device has a maximum drain-source voltage (V_DS) of 30V and can provide a very low on-resistance (R_DS(ON)) of 4mΩ at V_GS = 10V, which makes it perform well in applications requiring high efficiency and low power consumption. This MOSFET has a maximum drain current (I_D) of up to 18A, suitable for use in various power management, motor drive and high-frequency switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 18A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

- **Package**: SOP8
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 4mΩ @ V_GS = 10V
- 5mΩ @ V_GS = 4.5V
- **Maximum drain current (I_D)**: 18A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C

Domain and module applications:

Applications and module examples

**1. Power management **
SI4856DY-T1-E3 can be widely used in power management systems, especially in efficient DC-DC converters. Low on-resistance can reduce energy loss and improve conversion efficiency. For example, as a switching element, MOSFET can provide a stable voltage output in a buck converter, which is suitable for battery-powered systems in consumer electronics, communication equipment and other products.

**2. Motor drive **
In motor drive applications, SI4856DY-T1-E3 can be used as an efficient switching element to control the speed and direction of a DC motor. Its low R_DS(ON) enables the drive circuit to operate at lower losses, which is particularly suitable for use in small power tools, electric bicycles and other electric equipment.

**3. High-frequency switching applications **
This MOSFET is also suitable for high-frequency switching power supplies and RF applications. Due to its extremely low on-resistance and fast switching characteristics, it can work stably under high-frequency conditions and reduce heat generation. It can be used in the power switch part of power adapters, communication base stations and RF amplifiers.

**4. Efficient LED lighting**
In LED drive circuits, SI4856DY-T1-E3 can be used as an efficient power switch to achieve precise current regulation. This is essential for LED lighting equipment that requires long life and high efficiency, especially in energy-saving lamps and indoor and outdoor lighting systems.

**5. Mobile devices**
In mobile devices such as smartphones and tablets, low power consumption and efficient power management are essential. SI4856DY-T1-E3 has been widely used as a MOSFET in battery charging management and battery protection circuits.

In summary, the low R_DS(ON), high current carrying capacity and fast switching characteristics of SI4856DY-T1-E3 make it an excellent choice in many fields, especially in applications that require efficient power conversion, low power consumption and stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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