Product introduction:
Product Introduction
**SI4835BDY-T1-E3-VB** is a **P-Channel MOSFET**, which adopts **SOP8** package and is designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is **-30V**, and the maximum gate-source voltage (VGS) is **±20V**, with excellent switching performance. This MOSFET adopts **Trench technology**, providing **low RDS(ON)**, specifically **24mΩ** @ VGS = 4.5V and **18mΩ** @ VGS = 10V, with low conduction loss, which can effectively reduce power waste and heating problems. The maximum drain current (ID) is **-9A**, which is suitable for efficient power switches with medium current loads.
This MOSFET is suitable for multiple application fields such as **battery management systems**, **power converters**, **load switches**, etc., especially for occasions requiring efficient current control and low loss.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
|
18mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
| Parameter| Description|
|--------------------|----------------------------------------|
| **Model** | SI4835BDY-T1-E3-VB |
| **Package** | SOP8 |
| **Configuration** | Unipolar P-Channel MOSFET |
| **VDS** | -30V |
| **VGS** | ±20V |
| **Vth (Threshold Voltage)** | -1.7V |
| **RDS(ON)** | 24mΩ @ VGS = 4.5V |
| | 18mΩ @ VGS = 10V |
| **ID** | -9A |
| **Technology** | Trench Technology|
Domain and module applications:
Applications and module examples
1. **Power management systems: **
SI4835BDY-T1-E3-VB is suitable for **DC-DC converters** and **Battery management systems (BMS)**. In these applications, P-Channel MOSFETs are often used in load switches and battery protection circuits of switching power supplies. Its low **RDS(ON)** enables it to reduce power loss during load switching and provide more efficient energy management. When used in **power tools** or **LED drivers**, it can improve power conversion efficiency and reduce heat generation.
2. **Battery-driven devices: **
In **portable battery-driven devices** (such as **smartphones**, **tablets**, **wireless headphones**), SI4835BDY-T1-E3-VB can be used as a power management and protection switch. Low on-resistance and high current carrying capacity help improve battery life, reduce energy loss during battery charging and discharging, and extend the use time of the device.
3. **Load Switch:**
This MOSFET can be used in **load switch** applications, especially in **automotive power systems** or **mobile power**. In these occasions, SI4835BDY-T1-E3-VB as a load switch helps to accurately control the transmission of current, ensuring stable and efficient power output. Its **low RDS(ON)** helps to reduce power losses in the current path and increase the overall efficiency of the system.
4. **Power Tool Power Management:**
In **power tools** or other battery-powered industrial equipment, SI4835BDY-T1-E3-VB as a power switch can provide stable current control, reduce energy loss, and help extend battery life. For example, in devices such as **electric screwdrivers** or **electric drills**, this MOSFET ensures efficient use of the battery and prevents overheating and damage.
5. **Smart home devices:**
In **smart home** devices, SI4835BDY-T1-E3-VB can be used as a power switch to regulate the power input and output of the device. Especially in products such as **smart bulbs**, **temperature control systems** or **smart sockets**, its low power consumption characteristics help optimize the energy efficiency of batteries or power grids and provide longer operating time.
6. **Automotive electronic systems:**
This MOSFET can also be widely used in **automotive electronic systems**, such as **on-board battery management** and **power transmission modules**. In these systems, SI4835BDY-T1-E3-VB can efficiently control the battery charging and discharging process, reduce power loss, and improve battery life and charging efficiency.
7. **High-efficiency power adapter: **
In **High-efficiency power adapter** applications, SI4835BDY-T1-E3-VB can be used to optimize power conversion efficiency, especially in **chargers** and **power modules**. Through low on-resistance, SI4835BDY-T1-E3-VB helps reduce power waste and keeps the power adapter running at a lower temperature, improving overall efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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