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SI4834CDY-T1-GE3-VB Product details

Product introduction:

Product Introduction: SI4834CDY-T1-GE3-VB

SI4834CDY-T1-GE3-VB is a high-efficiency dual N-channel MOSFET in SOP8 package, designed for low-voltage and high-efficiency power management. This MOSFET has a maximum drain-source voltage (VDS) of 30V and a maximum gate-source voltage (VGS) of ±20V, providing a lower on-resistance (RDS(ON)) to reduce power loss and improve conversion efficiency. The device has a Vth of 1.7V and is suitable for a variety of high-efficiency power conversion and switching applications. It can provide a maximum leakage current of 8.5A to meet the needs of various medium and low power power systems and battery-driven devices. SI4834CDY-T1-GE3-VB uses advanced Trench technology, which provides high switching performance and low power consumption while having a small package size, making it suitable for space-limited application environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A 16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
Detailed parameter description:

- **Package type**: SOP8
- **Configuration**: Dual N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source turn-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=4.5V
- 16mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 8.5A
- **Technology type**: Trench technology
- **Operating temperature range**: Typically -55°C to +150°C (please refer to the data sheet for the specific temperature range)
- **Maximum power dissipation**: Refer to the rated value in the data sheet based on the application environment and thermal design

Domain and module applications:

Application areas and module examples:

1. **DC-DC converter**:
SI4834CDY-T1-GE3-VB's low RDS(ON) characteristics make it very suitable for use in DC-DC converters, especially in applications requiring high efficiency, such as step voltage conversion (buck or boost) modules. Its low on-resistance can effectively reduce energy loss, improve power conversion efficiency, and provide better thermal performance under high current load conditions. Common application areas include server power supplies, communication base station power supplies, consumer electronics, etc.

2. **Battery Management System (BMS)**:
This MOSFET can provide efficient power switching in the battery management system (BMS) to control the battery charging and discharging process. Due to its excellent switching performance and low on-resistance, SI4834CDY-T1-GE3-VB can reduce power loss, improve charging efficiency, and extend battery life. It is widely used in power tools, electric vehicles, electric scooters and other portable battery-driven devices.

3. **Motor drive**:
In motor drive applications, the high-efficiency switching characteristics of SI4834CDY-T1-GE3-VB make it very suitable for drive systems in equipment such as power tools, electric robots and electric bicycles (e-bikes). The low on-resistance of the MOSFET enables it to reduce power loss during long-term motor operation and provide stable current control, optimizing the efficiency of the motor drive and the operating temperature of the system.

4. **Intelligent power system**:
In intelligent power systems, SI4834CDY-T1-GE3-VB is used as an efficient switching element in power factor correction (PFC) circuits, sine wave inverters and UPS (uninterruptible power supply) systems. Its low RDS(ON) can significantly improve system efficiency, especially in grid energy transmission and battery management applications. By reducing conversion losses, the overall power quality and stability are improved.

5. **Automation control system**:
This MOSFET is also suitable for load switches and power conversion modules in industrial automation control systems. Due to its fast switching characteristics, SI4834CDY-T1-GE3-VB can accurately control the switching process of high loads and is widely used in PLC control systems, electrical equipment drives, robot control and other fields to improve system efficiency and response speed.

6. **Automotive Electronics Applications**:
In the field of automotive electronics, especially in electric vehicles (EV) and hybrid electric vehicles (HEV), SI4834CDY-T1-GE3-VB can be used in battery management, power conversion and drive systems. The high current carrying capacity and low power loss of MOSFET make it an ideal choice for the charging and discharging process of electric vehicle batteries, helping to reduce energy loss and improve the overall efficiency of the vehicle's electric system.

7. **Consumer Electronics Devices**:
The low on-resistance and high efficiency of SI4834CDY-T1-GE3-VB make it suitable for power management systems in various consumer electronic products, such as smartphones, tablets, laptops, etc. It can be used as a switching element in these devices to improve battery efficiency, extend battery life, and optimize overall power management performance.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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