Product introduction:
:**
SI4830DY-T1-E3-VB is a dual N-channel MOSFET in SOP8 package, designed for low voltage and medium to high current switching applications. Its maximum drain-source voltage (VDS) is 30V and the maximum drain current (ID) is 8.5A, which is suitable for a wide range of power management and load switching applications. The device uses Trench technology and has a very low on-resistance (RDS(ON) of 16mΩ@VGS=10V, 20mΩ@VGS=4.5V), which significantly reduces power loss and improves switching efficiency. SI4830DY-T1-E3-VB is very suitable for applications requiring high current and high efficiency, such as DC-DC conversion, load switching, power distribution and other modules.
**
File download
Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
:**
- **Package:** SOP8
- **Configuration:** Dual N-channel (N+N)
- **VDS:** 30V
- **VGS:** ±20V
- **Vth:** 1.7V
- **RDS(ON):**
- 16mΩ@VGS=10V
- 20mΩ@VGS=4.5V
- **ID:** 8.5A
- **Technology:** Trench technology, low on-resistance, optimized power management and load switching performance
**
Domain and module applications:
For example: **
Due to its low RDS(ON) and high current handling capability, the SI4830DY-T1-E3-VB is suitable for many applications that require high efficiency, high power density and low losses. In **DC-DC converters**, it can significantly improve energy conversion efficiency and reduce power consumption, making it very suitable for **portable devices**, **embedded systems**, **battery-driven devices** and other electronic products that require efficient power management.
This MOSFET also performs well in **load switching** applications, capable of quickly switching large currents, and is suitable for modules such as **power distribution modules** and **intelligent battery management systems**. In applications with high current loads such as **power tools**, **electric bicycles** and **drones**, the SI4830DY-T1-E3-VB can effectively provide stable and reliable power support while ensuring lower temperature rise and longer battery life.
In **LED drive circuits**, SI4830DY-T1-E3-VB can optimize current control and power conversion with its low on-resistance and high switching efficiency. It is particularly suitable for **LED lighting systems** with high efficiency and reliability, providing stable driving current and extending the service life of LED lamps.
In addition, SI4830DY-T1-E3-VB can also be widely used in **motor drive systems**, especially in **home appliances**, **home automation equipment** and **automotive electronics** that require precise switching control and high-efficiency operation, to ensure efficient drive and control of motors.
In short, SI4830DY-T1-E3-VB is suitable for a wide range of applications with its efficient current handling capability and low power loss, especially in **power conversion**, **load switches**, **battery management systems** and **motor drive modules** that require high efficiency and low energy consumption, meeting the strict requirements of modern electronic products for efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours