Product introduction：
Product Introduction
**SI4800BDY-T1-E3-VB** is a high-performance **single N-channel MOSFET**, which adopts **SOP8 package** and has excellent conduction performance and low switching loss. The maximum **drain-source voltage (V_DS)** of this MOSFET is **30V**, which is suitable for low-voltage power management, power conversion and switching power supply applications. Its **gate-source voltage (V_GS)** can reach **±20V** at most, and it has a low **threshold voltage (V_th)** of **1.7V**, which enables the MOSFET to switch easily at low gate voltage.
**SI4800BDY-T1-E3-VB** has a very low **on-resistance (R_DS(ON))** of **11mΩ** (V_GS = 4.5V) and **8mΩ** (V_GS = 10V), which can ensure very low power loss even when high current passes through, and its **drain current (I_D)** can reach a maximum of **13A**. This MOSFET adopts **Trench technology**, which can provide high-efficiency current control and adapt to various high-frequency switching power supplies and battery management systems. Its high-efficiency characteristics make it widely used in various power systems, which can significantly improve the overall efficiency and reliability of the system.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Main parameter description
| **Parameter** | **Value** |
|-----------------|------------------------|
| **Package** | SOP8 |
| **Configuration** | Single N-channel MOSFET |
| **V_DS (drain-source voltage)** | 30V |
| **V_GS (gate-source voltage)** | ±20V |
| **V_th (threshold voltage)** | 1.7V |
| **R_DS(ON) (on-resistance)** | 11mΩ (V_GS = 4.5V), 8mΩ (V_GS = 10V) |
| **I_D (drain current)** | 13A |
| **Technology** | Trench |
Domain and module applications：
Applications and modules
1. **Power management and DC-DC converters**
**SI4800BDY-T1-E3-VB** is suitable for various power management applications such as **DC-DC converters** and **AC-DC power adapters**. Due to its low on-resistance and high current carrying capacity, it can efficiently convert power and reduce the energy loss that may be generated during the conversion process, thereby improving the overall efficiency of the system. This MOSFET is widely used in **mobile power**, **industrial power** and **LED power management** systems to ensure that the power adapter maintains efficient and stable output during operation.
2. **Battery Management System (BMS)**
In **Battery Management System (BMS)**, SI4800BDY-T1-E3-VB is an ideal choice for battery charge and discharge control. Its low R_DS(ON) enables the battery management system to greatly reduce power loss during charging and discharging, and improve the battery charge and discharge efficiency. It is suitable for **electric vehicle** (EV)** energy storage system**, **solar energy storage system** and other fields, and can achieve efficient battery energy transmission and precise current management.
3. **Automotive electronics and electric drive systems**
SI4800BDY-T1-E3-VB has a wide range of applications in **automotive electronics** and **electric drive systems**. This MOSFET can be used as a power switch in the electric drive system to perform efficient current control and ensure the stable operation of the motor system. Due to its low on-resistance, it can effectively reduce energy loss and improve the performance of **electric power steering system** and **electric drive control system**, and is suitable for various electric vehicle (EV) and hybrid electric vehicle (HEV) applications.
4. **LED drive and lighting system**
In **LED drive power supply**, SI4800BDY-T1-E3-VB has high efficiency as a switching element. Due to its low on-resistance, it can accurately control current transmission, ensure the efficient operation of LED lighting system, reduce heat loss in power supply and improve the stability of light source. It is suitable for all kinds of **LED lighting equipment**, such as **indoor and outdoor lighting, display screens, automotive LED lights**, etc.
5. **Motor drive and control system**
In **motor drive and control system**, SI4800BDY-T1-E3-VB can be used as the power switching element of the motor. Its low on-resistance enables the motor to be efficiently controlled with less energy loss during startup and operation, and is widely used in **brushless DC motor (BLDC) drive**, **stepper motor drive** and other fields. In particular, it can provide efficient current control in systems such as robots, power tools, and smart homes.
6. **Consumer electronics**
SI4800BDY-T1-E3-VB is also suitable for all kinds of **consumer electronics**, such as **smartphones, tablets, and laptops**. In these devices, modules such as battery management, power adapters, and charging control systems can benefit from the high efficiency of this MOSFET. Its low on-resistance helps improve the charging efficiency of the device, extend battery life, and reduce power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
