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SI4670DY-T1-E3-VB Product details

Product introduction:

SI4670DY-T1-E3-VB MOSFET Product Introduction

**SI4670DY-T1-E3-VB** is a half-bridge MOSFET in SOP8 package, configured as a dual N-channel MOSFET (Half-Bridge N+N-Channel). The drain-source voltage (VDS) of this MOSFET is 30V, the gate-source voltage (VGS) is up to ±20V, it has a low gate threshold voltage (Vth) and extremely low on-resistance (RDS(ON)). It uses Trench technology and has excellent conductivity and switching characteristics. The drain current (ID) of this MOSFET is 6.8A and 10A respectively, which is suitable for high-efficiency and high-load applications. With its low RDS(ON), SI4670DY-T1-E3-VB provides excellent power conversion efficiency and reduces power loss, making it an ideal choice for power management, drive modules and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 6.8/10A 18mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Half-Bridge-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 6.8/10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 6.8/10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Half-Bridge-N+N
SI4670DY-T1-E3-VB MOSFET Detailed parameter description

- **Model**: SI4670DY-T1-E3-VB
- **Package**: SOP8
- **Configuration**: Half-Bridge N+N-type MOSFET
- **VDS**: 30V (drain to source voltage)
- **VGS**: ±20V (gate to source voltage)
- **Vth**: 1.7V (gate threshold voltage)
- **RDS(ON)**:
- 21.6mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- **ID**:
- 6.8A (N-Channel 1)
- 10A (N-Channel 2)
- **Technology**: Trench technology
- **Typical applications**: power management, drive circuits, DC-DC converters, load switches, battery management systems, etc.
- **Operating temperature range**: -55°C to 150°C
- **Standards**: ROHS compliance

Domain and module applications:

Application fields and modules of SI4670DY-T1-E3-VB MOSFET

1. **Power management and DC-DC converter**
Due to its low RDS(ON) characteristics, SI4670DY-T1-E3-VB MOSFET plays an important role in power management systems and DC-DC converters. By providing low power loss and high-efficiency switching performance, it is particularly suitable for switching components in power modules. This makes it particularly suitable for applications that require high-efficiency power conversion (such as computer power supplies, consumer electronics, communication equipment, etc.).

2. **Load switch and driver module**
The high current carrying capacity (6.8A and 10A) of this MOSFET makes it an ideal choice in load switches and driver modules. It can switch loads quickly and efficiently, thereby providing stable load control in power tools, home appliances, industrial automation equipment and other fields. Due to its low on-resistance, it can reduce heat loss in the system and improve overall working efficiency.

3. **Battery Management System (BMS)**
In the battery management system (BMS), SI4670DY-T1-E3-VB MOSFET provides efficient switching functions to ensure safe charging and discharging of the battery. This MOSFET is suitable for electric vehicles, battery-powered mobile devices, energy storage systems and other fields, helping to improve the utilization of batteries and ensure that the battery management system works smoothly and stably during charging and discharging.

4. **Brushless DC Motor (BLDC) Drive**
In the brushless DC motor (BLDC) drive, SI4670DY-T1-E3-VB MOSFET provides efficient current switching capabilities and can stably drive the motor. Its efficient switching characteristics make it suitable for application scenarios such as robots, home appliances, and automation equipment that require precise current control. By optimizing current transmission and control, the performance and service life of the motor can be improved.

5. **High-efficiency power management module**
This MOSFET can be widely used in various high-efficiency power management modules, including battery protection circuits, voltage-stabilized power supplies, inverters, etc. In these applications, it improves system efficiency and reduces energy loss by providing a stable current path and low on-resistance, and is particularly suitable for high-power systems that require frequent switching currents.

**Summary**
**SI4670DY-T1-E3-VB** is a high-efficiency, low-power loss half-bridge N+N-type MOSFET with a wide range of application prospects, especially in power management, DC-DC converters, load switches, drive circuits, and battery management systems. Its low RDS(ON) and high current carrying capacity ensure that it can provide stable and reliable performance in multiple high-efficiency systems, especially for applications requiring high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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