Product introduction:
SI4636DY-T1-E3-VB MOSFET Product Introduction
**SI4636DY-T1-E3-VB** is a high-performance single N-type MOSFET in SOP8 package, designed for low to medium voltage, high-efficiency power management applications. This MOSFET uses Trench technology, with low on-resistance (RDS(ON)) and excellent switching performance, suitable for applications requiring high current carrying capacity and high efficiency. Its drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) is up to ±20V, and it has a drain current carrying capacity of up to 18A. Its ultra-low RDS(ON) value (4mΩ @ VGS=10V) ensures minimal power loss and heat generation, and is ideal for high-efficiency power conversion and load switching applications.
File download
Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
|
4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
SI4636DY-T1-E3-VB MOSFET Detailed parameter description
- **Model**: SI4636DY-T1-E3-VB
- **Package**: SOP8
- **Configuration**: Single N-type MOSFET
- **VDS**: 30V (drain to source voltage)
- **VGS**: ±20V (gate to source voltage)
- **Vth**: 1.7V (gate threshold voltage)
- **RDS(ON)**:
- 5mΩ @ VGS=4.5V
- 4mΩ @ VGS=10V
- **ID**: 18A (drain current)
- **Technology**: Trench technology
**Operating temperature range**: -55°C to 150°C
**Typical applications**: power management, load switch, battery management system, DC-DC converter, load drive, power regulator, etc.
**Safety threshold**: ROHS compliant
Domain and module applications:
Application fields and modules of SI4636DY-T1-E3-VB MOSFET
1. **Power management and load switching applications**
SI4636DY-T1-E3-VB MOSFET has excellent performance in power management and load switching applications. Its ultra-low RDS(ON) value enables it to significantly reduce power consumption and improve efficiency, especially for applications that require frequent switching and fast response. It can be used in fields such as smart home, industrial automation and communication equipment, where MOSFET can efficiently control the load and effectively reduce energy loss.
2. **DC-DC converter and power regulator**
In DC-DC converters and power regulators, SI4636DY-T1-E3-VB MOSFET provides efficient switching function, which can significantly improve power conversion efficiency. Due to its low RDS(ON) characteristics, it can effectively reduce power loss in the power conversion process and improve overall system efficiency. This MOSFET is particularly suitable for power conversion and management in battery-powered devices, power adapters and portable electronic devices.
3. **Battery Management System (BMS)**
SI4636DY-T1-E3-VB plays an important role in battery management systems, especially in applications such as electric vehicles, energy storage systems and portable power supplies. Its high current carrying capacity and low on-resistance enable it to provide efficient charging and discharging control to ensure battery safety and stability. By optimizing the battery charging and discharging process, the battery life can be extended and the overall efficiency of the battery management system can be improved.
4. **Load drive and motor control**
In load drive and motor control systems, SI4636DY-T1-E3-VB MOSFET provides efficient power switching characteristics, which is very suitable for various industrial applications, power tools and home appliances. Through its low RDS(ON) value, it can reduce heat loss in the system and ensure efficient drive and stable operation of loads and motors. Whether it is driving motors, controlling relays, or managing high-power loads, SI4636DY-T1-E3-VB can provide strong support.
5. **High-efficiency battery-powered devices**
SI4636DY-T1-E3-VB is an ideal choice for high-efficiency battery-powered devices, especially in portable electronic devices, wireless communication devices, wearable devices and power tools. By optimizing the power conversion process and reducing power loss, it can improve battery utilization and extend the working time of the device. Low on-resistance and high current carrying capacity ensure efficient and stable operation under various load conditions.
In summary, **SI4636DY-T1-E3-VB** is a single N-type MOSFET suitable for applications such as power management, load switching, battery management, DC-DC converters and load driving. Its low on-resistance, high drain current carrying capacity and efficient switching performance make it widely used in various fields, especially in high-efficiency systems such as smart homes, industrial automation, battery management, portable electronic devices, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours