Product introduction:
SI4491DY-T1-GE3-VB MOSFET Product Introduction
SI4491DY-T1-GE3-VB is a high-performance unipolar P-channel MOSFET in SOP8 package with -30V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). The turn-on voltage (Vth) of this MOSFET is -3V, and it has a low on-resistance (RDS(ON)), which is 8mΩ (VGS=4.5V) and 5mΩ (VGS=10V). The maximum drain current (ID) is -18A, and it is manufactured using Trench technology, providing excellent switching performance and low power consumption. Due to its high current carrying capacity, low on-resistance and fast switching characteristics, SI4491DY-T1-GE3-VB is particularly suitable for power management, battery management, DC-DC converters and other applications requiring efficient switching.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-3V |
-18A |
|
|
5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-3V |
-18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-3V |
-18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
SI4491DY-T1-GE3-VB MOSFET Detailed Parameter Description
| Parameter | Description |
|------------------|-------------------------------------------------------|
| **Package** | SOP8 |
| **Configuration** | Unipolar P-channel MOSFET |
| **Drain-source voltage (VDS)** | -30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throw-on voltage (Vth)** | -3V |
| **On-resistance (RDS(ON))** | 8mΩ (VGS=4.5V); 5mΩ (VGS=10V) |
| **Maximum drain current (ID)** | -18A |
| **Technology** | Trench technology|
| **Operating temperature range** | -55°C to +150°C |
| **Maximum power loss** | 30W |
| **Applications** | Power management, load switches, DC-DC converters, battery management, etc. |
Domain and module applications:
SI4491DY-T1-GE3-VB Applications and Module Examples
1. **Power Management and Load Switch**
SI4491DY-T1-GE3-VB MOSFET performs well in power management systems and is particularly suitable for use as a load switch. In portable devices and battery-powered systems, it can provide efficient power switching and reduce energy losses. Due to its low on-resistance (RDS(ON)) and high current handling capability, it can accurately control the battery charging and discharging process in the battery management system (BMS) to ensure efficient energy transfer.
2. **DC-DC Converter**
In the DC-DC converter, SI4491DY-T1-GE3-VB MOSFET provides extremely low on-resistance and good switching performance, which can effectively reduce power loss and improve system efficiency. It is widely used in occasions requiring efficient power conversion, such as battery chargers, regulated power supplies, and power distribution systems. It can ensure the stability of high-frequency and high-power output, and is suitable for mobile devices, computer power supplies and other electronic products.
3. **Battery Management System (BMS)**
This MOSFET has a wide range of applications in battery management systems, especially in battery charge and discharge control. Due to its low RDS(ON) and high current carrying capacity, SI4491DY-T1-GE3-VB can efficiently manage the energy flow of the battery, ensuring the safety, stability and efficiency of the battery. It is commonly used in battery management applications in electric vehicles (EVs), energy storage systems and mobile devices.
4. **Power Tools and Home Appliances**
In power tools and home appliances, SI4491DY-T1-GE3-VB MOSFET can be used as an efficient switch to handle the switching needs of motor drives and high-power loads. Its low on-resistance characteristics help reduce power losses and provide stable performance in high-efficiency drive systems. This MOSFET can support high-speed motor control and load switching in power tools, electric vehicles and home appliances.
5. **Power amplifiers and audio equipment**
In audio equipment, the SI4491DY-T1-GE3-VB MOSFET can be used in the design of power amplifiers. Due to its high current carrying capacity and low on-resistance, it can achieve efficient transmission of audio signals, reduce energy loss, and improve the performance of audio equipment. Especially in audio systems and high-power amplifiers, it can provide a stable and efficient power supply.
6. **Electric Vehicles (EV) and Inverters**
SI4491DY-T1-GE3-VB is also suitable for power management and drive systems in electric vehicles, and can provide efficient power conversion in battery management, charging systems, and inverters. It can maintain low power consumption in low-voltage, high-current applications and improve system efficiency and reliability. Its high current handling capability makes it excel in electric vehicle power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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