Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
25A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
25A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
25A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
| Parameter| Description|
|--------------------|-------------------------------------|
| **Model** | SI4438DY-T1-E3-VB |
| **Package** | SOP8 |
| **Configuration** | Unipolar N-type MOSFET |
| **VDS** | 30V |
| **VGS** | ±20V |
| **Vth (threshold voltage)** | 1.7V |
| **RDS(ON)** | 4mΩ @ VGS = 4.5V |
| | 3mΩ @ VGS = 10V |
| **ID** | 25A |
| **Technology** | Trench technology|
Domain and module applications:
Applications and module examples
1. **Power management system: **
SI4438DY-T1-E3-VB has low **RDS(ON)** and high **ID**, making it outstanding in power management applications such as **DC-DC converter**. It can reduce power loss and improve overall performance during high-efficiency power conversion, and is particularly suitable for power modules that require low conduction loss and high conversion efficiency.
2. **Battery drive system: **
In **battery management systems**, especially in applications such as **portable devices**, **power tools** and **electric vehicles**, SI4438DY-T1-E3-VB's low threshold voltage (**Vth** is 1.7V) and high current carrying capacity (**ID** is 25A) enable it to efficiently control the battery charging and discharging process, ensure that the battery operates in a high-efficiency state, and extend the battery's service life and working time.
3. **Switching Power Modules: **
Due to its **VDS** of 30V and low **RDS(ON)**, this MOSFET is an ideal choice for switching power supply designs. It can be used for **low-voltage switching power supplies**, including power switches for devices such as **USB power adapters**, **battery chargers**, and **LED drivers**. Its low on-resistance ensures lower power losses and higher operating efficiency.
4. **Consumer Electronics: **
SI4438DY-T1-E3-VB has a wide range of applications in consumer electronic devices, especially **portable devices** and **low-voltage power management** applications. For example, battery management and power conversion modules in mobile phones, tablets, and other portable devices can benefit from the high-efficiency performance of this MOSFET.
5. **Electric vehicles and power tools: **
In **electric vehicles** and **power tools**, SI4438DY-T1-E3-VB is used as a power switch control element to help implement an efficient battery management system. Its high current carrying capacity and low **RDS(ON)** ensure the stability and efficiency of the system, especially in situations where fast response and high power output are required.
In summary, SI4438DY-T1-E3-VB is suitable for a variety of high-efficiency power conversion and management applications, especially in systems with low voltage drive and high current environments, providing reliable performance and low-loss solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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