Product introduction：
SI4420DY-T1-E3-VB MOSFET Product Introduction
SI4420DY-T1-E3-VB is a unipolar N-type MOSFET in SOP8 package with excellent performance and efficient energy conversion characteristics. Its maximum drain-source voltage (VDS) is 30V, which is suitable for low-voltage drive circuits and power management applications. This MOSFET adopts Trench technology, which gives it a lower on-resistance (RDS(ON)), which is 11mΩ at a gate voltage of 4.5V and 8mΩ at a gate voltage of 10V, thereby effectively reducing power loss and improving system efficiency. Its lower gate threshold voltage (Vth) of 1.7V can achieve more precise switching control and is suitable for power conversion and current drive systems with high efficiency requirements.
The rated maximum current (ID) of this MOSFET is 13A, which is suitable for applications requiring larger current transmission and can withstand high load currents without overheating or damage. With its excellent switching characteristics and low on-resistance, SI4420DY-T1-E3-VB is suitable for wide application in power modules, switching power supplies, DC-DC converters, motor drives and other fields.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
SI4420DY-T1-E3-VB MOSFET detailed parameter description
| Parameter | Description |
|-----------------|------------------------------------------------------------|
| **Model** | SI4420DY-T1-E3-VB |
| **Package** | SOP8 |
| **Configuration** | Unipolar N-type MOSFET |
| **VDS (maximum drain-source voltage)** | 30V |
| **VGS (maximum gate-source voltage)** | ±20V |
| **Vth (gate threshold voltage)** | 1.7V |
| **RDS(ON)** | 11mΩ (VGS = 4.5V)
8mΩ (VGS = 10V) |
| **ID (maximum drain current)** | 13A |
| **Technology** | Trench |
Domain and module applications：
SI4420DY-T1-E3-VB MOSFET Applications and Modules
1. **Switching Power Supplies (SMPS)**
SI4420DY-T1-E3-VB's low on-resistance and high switching efficiency make it very suitable for various switching power supply designs. It can provide stable current and efficient power conversion, especially in DC-DC converters and AC-DC power converters in low-voltage environments.
2. **Motor Driver Circuits**
Due to its low on-resistance and high current carrying capacity, SI4420DY-T1-E3-VB is suitable for motor control systems, especially in applications that require precise current regulation and efficient current transmission, such as power tools, brushless DC motor (BLDC) drive modules, etc.
3. **Power Management Systems**
As a low-voltage, high-current MOSFET, SI4420DY-T1-E3-VB can be used as a switching element in battery-powered systems or other power management systems to help achieve efficient power conversion and management. It is suitable for portable devices, consumer electronics, etc.
4. **Battery Chargers**
In battery chargers, SI4420DY-T1-E3-VB can be used to control the on and off of charging current. Its low on-resistance characteristics help reduce power loss during charging and improve charging efficiency.
5. **Current Protection and Overcurrent Protection Circuits**
Due to its high current carrying capacity and fast switching characteristics, SI4420DY-T1-E3-VB is suitable for use in current protection circuits. It can shut down the circuit in time under overcurrent conditions to prevent damage to circuit components.
Through these applications, the SI4420DY-T1-E3-VB provides efficient and reliable performance and is an ideal choice for power electronics systems that require efficient switching and high current delivery.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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