Product introduction：
SI4386DY-T1-E3-VB Product Introduction
**SI4386DY-T1-E3-VB** is a high-performance **single N-channel MOSFET** in **SOP8** package. The maximum drain-source voltage (VDS) of this MOSFET is **30V**, and it has a very low on-resistance of **5mΩ** @ VGS = 4.5V and **4mΩ** @ VGS = 10V respectively. Its high current carrying capability (maximum drain current ID is **18A**) makes it suitable for high-power and high-frequency applications, while providing extremely low power loss and high switching efficiency. This MOSFET uses **Trench technology**, which can effectively reduce the on-resistance and improve the switching speed and efficiency, making it suitable for efficient power management and power conversion applications.
The gate-source turn-on voltage (Vth) of this MOSFET is **1.7V**, which can support low gate drive voltage, making it compatible with low-voltage drive circuits and widely used in various low-voltage and high-efficiency circuits.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
|
4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
SI4386DY-T1-E3-VB Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source turn-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- **5mΩ** @ VGS = 4.5V
- **4mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench technology
Domain and module applications：
SI4386DY-T1-E3-VB Applications and Modules
1. **DC-DC Converter**:
Due to its low on-resistance and high current carrying capacity, **SI4386DY-T1-E3-VB** is very suitable for **DC-DC Converter**. In the power conversion process, low on-resistance helps to reduce energy loss and improve conversion efficiency, especially suitable for high load and high frequency conversion applications.
- **Application Examples**: In **power adapters, battery-powered devices, embedded power design** and other fields, MOSFET can be used as a key component of efficient power converters to improve the overall efficiency and stability of the system.
2. **Battery Management System (BMS)**:
This MOSFET plays an important role in **battery management systems**, especially in battery charging and discharging control. Its ultra-low on-resistance makes it extremely low loss when working at high currents, which can effectively manage the energy flow of the battery and protect the battery from overcurrent or overvoltage damage.
- **Application examples**: In **electric vehicles, power tools, energy storage systems**, etc., MOSFETs can be used to efficiently control the charging and discharging process of the battery, ensuring the health and long life of the battery.
3. **Electric drive system**:
**SI4386DY-T1-E3-VB**'s high current carrying capacity and low on-resistance make it ideal for **electric drive systems**. It can quickly switch current, provide high efficiency and low power consumption motor drive control, especially in systems such as power tools and electric vehicles that require high efficiency.
- **Application examples**: In **electric vehicles, power tools, electric robots** and other fields, MOSFETs are used in motor drive circuits to help improve the operating efficiency of the motor and reduce battery loss.
4. **Load switch control**:
Due to its low on-resistance and large current handling capability, **SI4386DY-T1-E3-VB** can also be used for **load switch control**. When controlling the connection and disconnection of power and load, MOSFET can provide efficient current management, reduce power loss during switching, and extend system life.
- **Application examples**: In **LED lighting systems, industrial load switches, and smart grid control systems**, MOSFET can be used to accurately control the switching of power and load to ensure the stability and efficiency of the system.
5. **Power conversion and inverter**:
**SI4386DY-T1-E3-VB** is suitable for various **power conversion** and **inverter** systems, especially in applications requiring efficient voltage conversion. Its low on-resistance helps reduce energy losses in inverters and power conversion devices and improves the operating efficiency of the overall system.
- **Application examples**: In **solar inverters, UPS power systems, power conversion modules** and other fields, MOSFET is used for efficient power conversion and voltage regulation to optimize energy utilization efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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