Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
25A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
25A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
25A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description:
- **Model**: SI4368DY-T1-E3
- **Package type**: SOP8
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 30V (max)
- **Gate-source voltage (VGS)**: ±20V (max)
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 25A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package type**: SOP8 (surface mount package)
- **Number of Pins**: 8 pins
- **Maximum Power Dissipation**: TBD (depends on heatsinking conditions)
- **Thermal Resistance**: < 45°C/W (junction to heatsink)
Domain and module applications：
3. Application fields and module examples:
# 1. **Power management and battery management systems**:
SI4368DY-T1-E3 is particularly suitable for power management systems, especially in situations where high current switching is required. Due to its low on-resistance and high current carrying capacity, this MOSFET performs particularly well in battery management systems (BMS). It can effectively control the charging and discharging process, prevent overcharging and overdischarging, and provide stable and low-loss working conditions for the battery. Especially in smartphones, laptops and power tools, SI4368DY-T1-E3 can optimize the energy efficiency of the battery and extend the battery life.
# 6. **Power inverters and renewable energy systems**:
In renewable energy systems (such as solar and wind inverters), SI4368DY-T1-E3 can be used for power conversion, DC-AC inverter and power transmission modules. It can effectively manage the high current flow in the system and optimize the conversion efficiency of the power supply and reduce heat generation. Due to its low on-resistance, it can reduce energy loss, thereby improving the performance and stability of the entire inverter system, and is widely used in green energy fields such as solar power generation and wind power generation.
# 7. **Computer and Communication Equipment**:
SI4368DY-T1-E3 is suitable for power management modules in computer power supplies and communication equipment. Due to its excellent performance, it can effectively control current and ensure the stability of power supply. In servers, data centers and network communication equipment, this MOSFET can be used as a key component for power conversion, power management and current protection.
Summary:
SI4368DY-T1-E3 is an efficient single N-type MOSFET with low on-resistance and high current carrying capacity. It is suitable for a wide range of applications such as power management, DC-DC conversion, automotive electronics, power tools, LED lighting, etc. Its excellent performance can effectively reduce system power consumption, optimize power efficiency, and improve the stability of current control. It is an ideal choice for various battery-powered systems and high-power electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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