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SI4114DY-T1-E3-VB Product details

Product introduction:

Product Introduction

**SI4114DY-T1-E3-VB** is a single N-channel power MOSFET in SOP-8 package with high switching performance and extremely low on-resistance (RDS(ON)), suitable for high-efficiency power applications that require low voltage drive. It has a drain-source voltage (VDS) of 30V and can withstand a current (ID) of up to 18A. The MOSFET has a VGS (gate-source voltage) of ±20V and a Vth (threshold voltage) of 1.7V. It has excellent conduction characteristics and is suitable for high-efficiency power management, DC-DC converters, motor drives and other high-efficiency power conversion modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 18A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

- **Model**: SI4114DY-T1-E3-VB
- **Package type**: SOP8
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 5mΩ@VGS=4.5V
- 4mΩ@VGS=10V
- **ID (maximum drain current)**: 18A
- **Technology**: Trench technology (Trench MOSFET technology to improve efficiency and reduce on-resistance)

Domain and module applications:

Applications and modules

1. **Power management**
Due to its low on-resistance and high efficiency, SI4114DY-T1-E3-VB is very suitable for power management systems, especially in high-efficiency DC-DC converters. It can greatly improve power conversion efficiency, reduce system power consumption and heat generation, and is widely used in computer power supplies, communication equipment power supplies, portable power adapters, etc.

2. **Motor drive**
The high current carrying capacity (18A) of this MOSFET makes it an ideal choice for motor drive circuits. It can provide stable current output in motor control and drive applications, and is commonly found in motor drive systems such as power tools, electric toys, and household appliances.

3. **Load switch control**
Due to its switching characteristics and low conduction loss, SI4114DY-T1-E3-VB can be widely used in the field of load switch control, especially for load switches in automotive electronic systems, battery management systems, and other occasions requiring precise current control.

4. **Electric Vehicles and Charging Systems**
In the battery management and charging systems of electric vehicles, SI4114DY-T1-E3-VB can be efficiently used for battery pack management and charge and discharge control, especially in battery chargers and battery protection circuits.

5. **High-frequency Converters**
In high-frequency power converters, the use of low RDS(ON) MOSFETs can greatly improve conversion efficiency and reduce heat generation. SI4114DY-T1-E3-VB can improve system reliability and energy efficiency in such applications and is widely used in communication equipment, computer power supplies, and other industrial power conversion modules.

In summary, SI4114DY-T1-E3-VB is a high-efficiency, high-reliability power MOSFET suitable for high-power density power supplies and power conversion applications in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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