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Si3993DV-T1-GE3-VB Product details
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Product Introduction:
Si3993DV-T1-GE3 is a dual P-channel MOSFET launched by Vishay, which adopts SOT23-6 package and is designed for low-voltage power management, load switching and battery protection applications. Its maximum drain-source voltage (VDS) is -20V, the maximum drain current (ID) is -4A, and the threshold voltage (Vth) is -0.6V. This MOSFET adopts Trench technology and has low RDS(ON) characteristics. Under different gate-source voltages (VGS), it can effectively reduce conduction losses and improve power efficiency. Si3993DV-T1-GE3 is widely used in consumer electronics, portable devices, automotive electronics and battery-powered systems, especially in power management occasions that require efficient current control and low power consumption.
Si3993DV-T1-GE3 is a dual P-channel MOSFET launched by Vishay, which adopts SOT23-6 package and is designed for low-voltage power management, load switching and battery protection applications. Its maximum drain-source voltage (VDS) is -20V, the maximum drain current (ID) is -4A, and the threshold voltage (Vth) is -0.6V. This MOSFET adopts Trench technology and has low RDS(ON) characteristics. Under different gate-source voltages (VGS), it can effectively reduce conduction losses and improve power efficiency. Si3993DV-T1-GE3 is widely used in consumer electronics, portable devices, automotive electronics and battery-powered systems, especially in power management occasions that require efficient current control and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description:
- **Model**: Si3993DV-T1-GE3
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: -4A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Application**:
- Load switch
- Power Management
- Battery Protection
- Battery Powered Systems
- Reverse Current Protection
- Low Voltage Load Control
- **Model**: Si3993DV-T1-GE3
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: -4A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Application**:
- Load switch
- Power Management
- Battery Protection
- Battery Powered Systems
- Reverse Current Protection
- Low Voltage Load Control
Domain and module applications：
Application fields and module examples:
1. **Load switch and power management**:
Si3993DV-T1-GE3 MOSFET is very suitable for low voltage load switch applications, especially in portable devices and battery-driven systems. It can efficiently control the switching between battery power and load, thereby improving the power efficiency of the system and reducing power consumption. This MOSFET has low RDS(ON) characteristics, making it particularly suitable for consumer electronic devices (such as smartphones, tablets, portable speakers, etc.) that require low power consumption and long battery life.
2. **Battery protection and battery management system**:
In the battery management system (BMS), Si3993DV-T1-GE3 MOSFET is often used for battery protection and management. It can provide efficient current control during the charging and discharging process to prevent the battery from overcharging, over-discharging or overcurrent, thereby extending the battery life. It is particularly suitable for wearable devices, smart home battery-powered products, and various power tools, which have high requirements for the reliability of the battery management system.
3. **DC-DC Converters and Power Modules**:
The low on-resistance of the Si3993DV-T1-GE3 makes it suitable for use in DC-DC converters, helping power systems achieve efficient voltage conversion. In smart power adapters, power modules, and power tools, MOSFETs control the direction of current flow and maintain power stability. It can provide stable current output, improve conversion efficiency, and reduce energy loss, and is particularly suitable for module designs that require high-efficiency power.
4. **Reverse Current Protection**:
The Si3993DV-T1-GE3 MOSFET can be used in reverse current protection circuits to prevent damage caused by incorrect access to the power supply in battery-powered systems. In battery-powered devices (such as smart home devices, mobile power supplies, automotive electronics, etc.), MOSFETs can effectively protect batteries and power supplies from damage. Its low RDS(ON) characteristics also help reduce energy losses when reverse current occurs, improving the stability of the power system.
5. **Smart Home and Wearable Devices**:
In smart home systems, Si3993DV-T1-GE3 MOSFET can be used to control the power switch of home appliances, such as smart sockets, lighting control, smart appliances, etc. Due to its low power consumption characteristics, it is particularly suitable for battery-powered smart devices and low-power applications. The efficient load switching function of MOSFET enables the device to reduce energy consumption while ensuring stable operation.
6. **Automotive Electronics and Electric Vehicles**:
Si3993DV-T1-GE3 MOSFET plays a key role in the battery management system (BMS) of electric vehicles (EVs), hybrid electric vehicles (HEVs), and other electric vehicles. It can efficiently control the charging and discharging process of the battery and prevent problems such as overcurrent and overvoltage. Its low RDS(ON) characteristics ensure efficient power utilization and are suitable for battery-driven vehicles.
1. **Load switch and power management**:
Si3993DV-T1-GE3 MOSFET is very suitable for low voltage load switch applications, especially in portable devices and battery-driven systems. It can efficiently control the switching between battery power and load, thereby improving the power efficiency of the system and reducing power consumption. This MOSFET has low RDS(ON) characteristics, making it particularly suitable for consumer electronic devices (such as smartphones, tablets, portable speakers, etc.) that require low power consumption and long battery life.
2. **Battery protection and battery management system**:
In the battery management system (BMS), Si3993DV-T1-GE3 MOSFET is often used for battery protection and management. It can provide efficient current control during the charging and discharging process to prevent the battery from overcharging, over-discharging or overcurrent, thereby extending the battery life. It is particularly suitable for wearable devices, smart home battery-powered products, and various power tools, which have high requirements for the reliability of the battery management system.
3. **DC-DC Converters and Power Modules**:
The low on-resistance of the Si3993DV-T1-GE3 makes it suitable for use in DC-DC converters, helping power systems achieve efficient voltage conversion. In smart power adapters, power modules, and power tools, MOSFETs control the direction of current flow and maintain power stability. It can provide stable current output, improve conversion efficiency, and reduce energy loss, and is particularly suitable for module designs that require high-efficiency power.
4. **Reverse Current Protection**:
The Si3993DV-T1-GE3 MOSFET can be used in reverse current protection circuits to prevent damage caused by incorrect access to the power supply in battery-powered systems. In battery-powered devices (such as smart home devices, mobile power supplies, automotive electronics, etc.), MOSFETs can effectively protect batteries and power supplies from damage. Its low RDS(ON) characteristics also help reduce energy losses when reverse current occurs, improving the stability of the power system.
5. **Smart Home and Wearable Devices**:
In smart home systems, Si3993DV-T1-GE3 MOSFET can be used to control the power switch of home appliances, such as smart sockets, lighting control, smart appliances, etc. Due to its low power consumption characteristics, it is particularly suitable for battery-powered smart devices and low-power applications. The efficient load switching function of MOSFET enables the device to reduce energy consumption while ensuring stable operation.
6. **Automotive Electronics and Electric Vehicles**:
Si3993DV-T1-GE3 MOSFET plays a key role in the battery management system (BMS) of electric vehicles (EVs), hybrid electric vehicles (HEVs), and other electric vehicles. It can efficiently control the charging and discharging process of the battery and prevent problems such as overcurrent and overvoltage. Its low RDS(ON) characteristics ensure efficient power utilization and are suitable for battery-driven vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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