中文
English
SI3993DV-T1-E3-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction**
SI3993DV-T1-E3-VB is a bipolar transistor (P+P-Channel) MOSFET in SOT23-6 package. This MOSFET has a low on-resistance (RDS(ON)) and is suitable for low-voltage power management, high-efficiency load switching and power conversion applications. Its maximum VDS (drain to source voltage) is -20V, and the maximum VGS (gate to source voltage) is ±12V. It supports higher current conduction capability and the maximum ID (drain current) is -4A. This product uses Trench technology to achieve high-efficiency switching operation at a lower gate voltage. It has better current control and power loss control characteristics, and is suitable for various low-voltage control systems.
SI3993DV-T1-E3-VB is a bipolar transistor (P+P-Channel) MOSFET in SOT23-6 package. This MOSFET has a low on-resistance (RDS(ON)) and is suitable for low-voltage power management, high-efficiency load switching and power conversion applications. Its maximum VDS (drain to source voltage) is -20V, and the maximum VGS (gate to source voltage) is ±12V. It supports higher current conduction capability and the maximum ID (drain current) is -4A. This product uses Trench technology to achieve high-efficiency switching operation at a lower gate voltage. It has better current control and power loss control characteristics, and is suitable for various low-voltage control systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
2. **Detailed parameter description**
- **Model**: SI3993DV-T1-E3-VB
- **Package**: SOT23-6
- **Configuration**: Dual P+P type (P-Channel and P+Channel)
- **VDS (drain-source voltage)**: -20V
- **VGS (gate-source voltage)**: ±12V
- **Vth (throw-on voltage)**: -0.6V
- **RDS(ON)**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **ID (drain current)**: -4A
- **Technology**: Trench technology (provides lower on-resistance and higher switching efficiency)
- **Model**: SI3993DV-T1-E3-VB
- **Package**: SOT23-6
- **Configuration**: Dual P+P type (P-Channel and P+Channel)
- **VDS (drain-source voltage)**: -20V
- **VGS (gate-source voltage)**: ±12V
- **Vth (throw-on voltage)**: -0.6V
- **RDS(ON)**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **ID (drain current)**: -4A
- **Technology**: Trench technology (provides lower on-resistance and higher switching efficiency)
Domain and module applications：
3. **Application fields and module examples**
#### **1. Battery-powered devices: **
In portable electronic devices such as smartphones, tablets, portable medical devices, etc., SI3993DV-T1-E3-VB is widely used as a load switch or power management switch. Due to its low RDS(ON), this MOSFET can effectively reduce power consumption and improve energy efficiency, which can extend the use time of the device in battery-powered devices.
#### **2. Power management system: **
In low-voltage power management systems, this MOSFET is used to control and switch loads. In power conversion and load regulation modules, SI3993DV-T1-E3-VB can provide efficient switching performance, ensure stable power supply, and reduce energy loss. Its low on-resistance characteristics make it suitable for applications such as high-efficiency DC-DC converters and switching regulators.
#### **3. Smart Home and Automation Control: **
In smart home products, such as smart sockets, light switches, smart sensors, etc., this MOSFET is used for power switching and load control. Since it can withstand a maximum current of -4A, it is suitable for use in low-power smart home devices where the current is not high. Its low RDS(ON) characteristics further improve the overall energy efficiency of the device.
#### **4. Automotive Electronics: **
This type of MOSFET can be used in automotive electronic systems such as power windows, interior lighting, and battery management systems. Its high current carrying capacity and low switching loss characteristics make it suitable for these automotive applications that require high efficiency and stable performance, ensuring that the vehicle's power system operates efficiently.
#### **5. Motor drive and control: **
In low-power motor drive systems, such as toy motors, model cars, and automatic control devices, SI3993DV-T1-E3-VB can be used as a drive switch for the motor to help achieve smooth start-stop control and efficient current switching. Its low on-resistance and ability to adapt to higher currents enable it to provide higher drive efficiency.
Through these application examples, we can see that SI3993DV-T1-E3-VB is an efficient, low-power dual P-Channel MOSFET that is suitable for a variety of low-voltage and medium-power switching applications, and is widely used in consumer electronics, power management, smart home and other fields.
#### **1. Battery-powered devices: **
In portable electronic devices such as smartphones, tablets, portable medical devices, etc., SI3993DV-T1-E3-VB is widely used as a load switch or power management switch. Due to its low RDS(ON), this MOSFET can effectively reduce power consumption and improve energy efficiency, which can extend the use time of the device in battery-powered devices.
#### **2. Power management system: **
In low-voltage power management systems, this MOSFET is used to control and switch loads. In power conversion and load regulation modules, SI3993DV-T1-E3-VB can provide efficient switching performance, ensure stable power supply, and reduce energy loss. Its low on-resistance characteristics make it suitable for applications such as high-efficiency DC-DC converters and switching regulators.
#### **3. Smart Home and Automation Control: **
In smart home products, such as smart sockets, light switches, smart sensors, etc., this MOSFET is used for power switching and load control. Since it can withstand a maximum current of -4A, it is suitable for use in low-power smart home devices where the current is not high. Its low RDS(ON) characteristics further improve the overall energy efficiency of the device.
#### **4. Automotive Electronics: **
This type of MOSFET can be used in automotive electronic systems such as power windows, interior lighting, and battery management systems. Its high current carrying capacity and low switching loss characteristics make it suitable for these automotive applications that require high efficiency and stable performance, ensuring that the vehicle's power system operates efficiently.
#### **5. Motor drive and control: **
In low-power motor drive systems, such as toy motors, model cars, and automatic control devices, SI3993DV-T1-E3-VB can be used as a drive switch for the motor to help achieve smooth start-stop control and efficient current switching. Its low on-resistance and ability to adapt to higher currents enable it to provide higher drive efficiency.
Through these application examples, we can see that SI3993DV-T1-E3-VB is an efficient, low-power dual P-Channel MOSFET that is suitable for a variety of low-voltage and medium-power switching applications, and is widely used in consumer electronics, power management, smart home and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
