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Si3993CDV-T1-GE3-VB Product details
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Si3993CDV-T1-GE3-VB MOSFET Product Introduction
Si3993CDV-T1-GE3-VB is a high-performance bipolar P+P-channel MOSFET launched by **Vishay**, packaged in **SOT23-6**. This MOSFET adopts advanced **Trench** technology, has low on-resistance and high current carrying capacity, and is suitable for a variety of low-voltage, high-efficiency power management, load switching and battery management applications. Its drain-source voltage (V_DS) is -20V, the gate-source voltage (V_GS) is ±12V, and the gate threshold voltage (V_th) is -0.6V, ensuring that it can operate efficiently and stably in a variety of low-voltage working environments. Its on-resistance (R_DS(ON)) is 100mΩ (V_GS=2.5V) and 75mΩ (V_GS=4.5V), and the maximum leakage current (I_D) is -4A, which is suitable for applications requiring low power consumption and high efficiency.
Si3993CDV-T1-GE3-VB is a high-performance bipolar P+P-channel MOSFET launched by **Vishay**, packaged in **SOT23-6**. This MOSFET adopts advanced **Trench** technology, has low on-resistance and high current carrying capacity, and is suitable for a variety of low-voltage, high-efficiency power management, load switching and battery management applications. Its drain-source voltage (V_DS) is -20V, the gate-source voltage (V_GS) is ±12V, and the gate threshold voltage (V_th) is -0.6V, ensuring that it can operate efficiently and stably in a variety of low-voltage working environments. Its on-resistance (R_DS(ON)) is 100mΩ (V_GS=2.5V) and 75mΩ (V_GS=4.5V), and the maximum leakage current (I_D) is -4A, which is suitable for applications requiring low power consumption and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Si3993CDV-T1-GE3-VB MOSFET detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Bipolar P+P-channel MOSFET
- **Drain-source voltage (V_DS)**: -20V
- **Gate-source voltage (V_GS)**: ±12V
- **Gate threshold voltage (V_th)**: -0.6V
- **On-resistance (R_DS(ON))**:
- 100mΩ (at V_GS=2.5V)
- 75mΩ (at V_GS=4.5V)
- **Maximum leakage current (I_D)**: -4A
- **Technology**: Trench
- **Application areas**: power management, battery management, load switching, motor control, etc.
- **Package**: SOT23-6
- **Configuration**: Bipolar P+P-channel MOSFET
- **Drain-source voltage (V_DS)**: -20V
- **Gate-source voltage (V_GS)**: ±12V
- **Gate threshold voltage (V_th)**: -0.6V
- **On-resistance (R_DS(ON))**:
- 100mΩ (at V_GS=2.5V)
- 75mΩ (at V_GS=4.5V)
- **Maximum leakage current (I_D)**: -4A
- **Technology**: Trench
- **Application areas**: power management, battery management, load switching, motor control, etc.
Domain and module applications：
Application fields and module examples
1. **Power management system**:
The low on-resistance of Si3993CDV-T1-GE3-VB enables it to provide efficient power conversion in power management systems. It can be used in **DC-DC converters** (such as step-down Buck converters and step-up Boost converters) and power regulators to reduce power loss and improve efficiency. It is suitable for power management modules for portable devices, embedded systems and low-power devices.
2. **Battery management and protection system**:
In the **Battery Management System (BMS)**, Si3993CDV-T1-GE3-VB can be used as a switching element for the battery to control the battery charging and discharging process and provide overcharge and over-discharge protection for the battery. Low R_DS(ON) reduces power loss in the battery management process and is widely used in battery management modules for electric vehicles, power tools, electric vehicles and other battery-driven devices.
3. **Load switch applications**:
Due to its low on-resistance and high current carrying capacity, Si3993CDV-T1-GE3-VB can be used as an efficient **load switch** component in applications that require fast switching and efficient operation. It is suitable for LED driving, sensor interfaces and other load control systems, especially in low-power electronic devices and intelligent power management systems.
4. **Motor control system**:
In **motor drive circuits**, Si3993CDV-T1-GE3-VB can be used as a switch element for motor start/stop control and speed regulation, especially for low-power motor control. It is widely used in home appliances, automation equipment, robots and other motor drive systems to improve the control accuracy and operating efficiency of the system.
5. **Intelligent control and automation systems**:
Si3993CDV-T1-GE3-VB can be used as a power management and load switching switch element in smart home and industrial automation control systems. Its high-efficiency performance can improve system stability, reduce power consumption, and ensure the reliability of equipment during long-term operation. It is suitable for smart lighting, smart home appliances, sensor control and industrial automation systems.
6. **Current protection and switch control**:
Due to its bipolar structure, this MOSFET is suitable for use in multi-channel load switching and current protection applications. Si3993CDV-T1-GE3-VB can be used for multi-channel power distribution and current protection circuits, and is widely used in smart power modules, load balancing, and high-efficiency battery management.
1. **Power management system**:
The low on-resistance of Si3993CDV-T1-GE3-VB enables it to provide efficient power conversion in power management systems. It can be used in **DC-DC converters** (such as step-down Buck converters and step-up Boost converters) and power regulators to reduce power loss and improve efficiency. It is suitable for power management modules for portable devices, embedded systems and low-power devices.
2. **Battery management and protection system**:
In the **Battery Management System (BMS)**, Si3993CDV-T1-GE3-VB can be used as a switching element for the battery to control the battery charging and discharging process and provide overcharge and over-discharge protection for the battery. Low R_DS(ON) reduces power loss in the battery management process and is widely used in battery management modules for electric vehicles, power tools, electric vehicles and other battery-driven devices.
3. **Load switch applications**:
Due to its low on-resistance and high current carrying capacity, Si3993CDV-T1-GE3-VB can be used as an efficient **load switch** component in applications that require fast switching and efficient operation. It is suitable for LED driving, sensor interfaces and other load control systems, especially in low-power electronic devices and intelligent power management systems.
4. **Motor control system**:
In **motor drive circuits**, Si3993CDV-T1-GE3-VB can be used as a switch element for motor start/stop control and speed regulation, especially for low-power motor control. It is widely used in home appliances, automation equipment, robots and other motor drive systems to improve the control accuracy and operating efficiency of the system.
5. **Intelligent control and automation systems**:
Si3993CDV-T1-GE3-VB can be used as a power management and load switching switch element in smart home and industrial automation control systems. Its high-efficiency performance can improve system stability, reduce power consumption, and ensure the reliability of equipment during long-term operation. It is suitable for smart lighting, smart home appliances, sensor control and industrial automation systems.
6. **Current protection and switch control**:
Due to its bipolar structure, this MOSFET is suitable for use in multi-channel load switching and current protection applications. Si3993CDV-T1-GE3-VB can be used for multi-channel power distribution and current protection circuits, and is widely used in smart power modules, load balancing, and high-efficiency battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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