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SI3983DV-T1-GE3-VB Product details
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1. Product Introduction: SI3983DV-T1-GE3
SI3983DV-T1-GE3 is a dual P-type MOSFET in SOT23-6 package, designed based on Trench technology, especially suitable for power management and switching circuits. It has two independent P-type channels, with low on-resistance, low power consumption, and can operate under low voltage and high efficiency conditions. The maximum drain-source voltage (VDS) of this MOSFET is -20V, and the maximum drain current (ID) is -4A, which is suitable for a variety of low-voltage power applications. SI3983DV-T1-GE3 has a low on-resistance (RDS(ON)) and can provide stable switching performance at different gate voltages. It is widely used in low-voltage power control, switching power supplies, load switches, protection circuits and battery management.
SI3983DV-T1-GE3 is a dual P-type MOSFET in SOT23-6 package, designed based on Trench technology, especially suitable for power management and switching circuits. It has two independent P-type channels, with low on-resistance, low power consumption, and can operate under low voltage and high efficiency conditions. The maximum drain-source voltage (VDS) of this MOSFET is -20V, and the maximum drain current (ID) is -4A, which is suitable for a variety of low-voltage power applications. SI3983DV-T1-GE3 has a low on-resistance (RDS(ON)) and can provide stable switching performance at different gate voltages. It is widely used in low-voltage power control, switching power supplies, load switches, protection circuits and battery management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
2. Detailed parameter description:
- **Model**: SI3983DV-T1-GE3
- **Package type**: SOT23-6
- **Configuration**: Dual P-type MOSFET (P+P channel)
- **Drain-source voltage (VDS)**: -20V (max)
- **Gate-source voltage (VGS)**: ±12V (max)
- **Throughput voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: -4A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
- **Number of Pins**: 6 pins
- **Model**: SI3983DV-T1-GE3
- **Package type**: SOT23-6
- **Configuration**: Dual P-type MOSFET (P+P channel)
- **Drain-source voltage (VDS)**: -20V (max)
- **Gate-source voltage (VGS)**: ±12V (max)
- **Throughput voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: -4A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
- **Number of Pins**: 6 pins
Domain and module applications：
3. Application fields and module examples:
# 1. **Power management system**:
SI3983DV-T1-GE3 can be used for power switching and voltage regulation in power management systems, especially in low-voltage power applications. Due to its low on-resistance, it can significantly reduce power consumption and heat loss, and is widely used in battery-powered systems and portable electronic devices. It is suitable for power modules such as DC-DC converters, load switches, and power management ICs.
# 6. **Intelligent lighting system**:
In intelligent lighting systems, SI3983DV-T1-GE3 is used as a switching device to drive current, especially in LED drivers and power regulators, which can effectively control the current flow, reduce energy consumption and optimize device performance. Its low on-resistance ensures low power consumption during system operation, and is suitable for various intelligent lighting and energy-saving lighting applications.
# 7. **Communications and IoT**:
This dual P-type MOSFET can be used in communications and IoT devices as power management and switching power modules. It is used in these devices for current control, battery management, and power management to ensure that communications devices maintain efficient operation at low voltages. It is particularly suitable for IoT applications such as wireless sensors, smart home devices, and remote control systems.
# 8. **Efficient switches in low-voltage systems**:
Due to its low on-resistance and efficient switching characteristics, the SI3983DV-T1-GE3 is suitable for efficient current switching in various low-voltage systems. It can switch quickly and effectively manage the flow of current, and is particularly suitable for low-voltage systems that require fast response, such as portable devices, battery-powered products, and precision measuring instruments.
Through its excellent electrical performance and high efficiency, the SI3983DV-T1-GE3 can be widely used in many of the above fields, especially for low-voltage, efficient power control, battery management, and power management modules in intelligent systems.
# 1. **Power management system**:
SI3983DV-T1-GE3 can be used for power switching and voltage regulation in power management systems, especially in low-voltage power applications. Due to its low on-resistance, it can significantly reduce power consumption and heat loss, and is widely used in battery-powered systems and portable electronic devices. It is suitable for power modules such as DC-DC converters, load switches, and power management ICs.
# 6. **Intelligent lighting system**:
In intelligent lighting systems, SI3983DV-T1-GE3 is used as a switching device to drive current, especially in LED drivers and power regulators, which can effectively control the current flow, reduce energy consumption and optimize device performance. Its low on-resistance ensures low power consumption during system operation, and is suitable for various intelligent lighting and energy-saving lighting applications.
# 7. **Communications and IoT**:
This dual P-type MOSFET can be used in communications and IoT devices as power management and switching power modules. It is used in these devices for current control, battery management, and power management to ensure that communications devices maintain efficient operation at low voltages. It is particularly suitable for IoT applications such as wireless sensors, smart home devices, and remote control systems.
# 8. **Efficient switches in low-voltage systems**:
Due to its low on-resistance and efficient switching characteristics, the SI3983DV-T1-GE3 is suitable for efficient current switching in various low-voltage systems. It can switch quickly and effectively manage the flow of current, and is particularly suitable for low-voltage systems that require fast response, such as portable devices, battery-powered products, and precision measuring instruments.
Through its excellent electrical performance and high efficiency, the SI3983DV-T1-GE3 can be widely used in many of the above fields, especially for low-voltage, efficient power control, battery management, and power management modules in intelligent systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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