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SI3981DV-T1-GE3-VB Product details
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**SI3981DV-T1-GE3-VB Product Introduction**
SI3981DV-T1-GE3-VB is a high-performance dual P-channel MOSFET in SOT23-6 package, designed for low-voltage, high-efficiency power management systems and load switching applications. The MOSFET has a drain-source voltage (V_DS) of -20V and a gate-source voltage (V_GS) of ±12V. It has good switching performance and low on-resistance characteristics, making it suitable for a variety of low-voltage applications. The device has an on-resistance (R_DS(on)) of 75mΩ at V_GS = 4.5V and 100mΩ at V_GS = 2.5V, which can effectively reduce power consumption and improve power efficiency. Its maximum drain current (I_D) is -4A, which is suitable for medium current loads. SI3981DV-T1-GE3-VB uses Trench technology to optimize its current handling capability and switching performance, suitable for applications requiring low power consumption and high efficiency, such as battery management, low voltage power regulation, and intelligent control systems.
SI3981DV-T1-GE3-VB is a high-performance dual P-channel MOSFET in SOT23-6 package, designed for low-voltage, high-efficiency power management systems and load switching applications. The MOSFET has a drain-source voltage (V_DS) of -20V and a gate-source voltage (V_GS) of ±12V. It has good switching performance and low on-resistance characteristics, making it suitable for a variety of low-voltage applications. The device has an on-resistance (R_DS(on)) of 75mΩ at V_GS = 4.5V and 100mΩ at V_GS = 2.5V, which can effectively reduce power consumption and improve power efficiency. Its maximum drain current (I_D) is -4A, which is suitable for medium current loads. SI3981DV-T1-GE3-VB uses Trench technology to optimize its current handling capability and switching performance, suitable for applications requiring low power consumption and high efficiency, such as battery management, low voltage power regulation, and intelligent control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
**SI3981DV-T1-GE3-VB Detailed parameter description**
- **Package:** SOT23-6
- **Configuration:** Dual-P+P-Channel MOSFET
- **V_DS (drain-source voltage):** -20V
- **V_GS (gate-source voltage):** ±12V
- **V_th (gate threshold voltage):** -0.6V
- **R_DS(ON) (on-resistance):**
- 100mΩ @ V_GS = 2.5V
- 75mΩ @ V_GS = 4.5V
- **I_D (maximum drain current):** -4A
- **Technology:** Trench (trench technology)
**Electrical characteristics:**
- **Low on-resistance:** At V_GS = 4.5V When V_GS = 2.5V, R_DS(on) is 75mΩ, which can provide lower power loss and play an important role in efficient power conversion. When V_GS = 2.5V, R_DS(on) is 100mΩ, which is suitable for low voltage applications.
- **High current capability:** The maximum drain current is -4A, which can handle larger load currents and is suitable for use in higher current power management and switching control.
- **Wide gate-source voltage range:** The gate-source voltage range of this MOSFET is ±12V, which can adapt to a variety of voltage control requirements and is easy to integrate into various power and load switching circuits.
- **Trench technology:** The use of Trench technology optimizes the conduction performance, reduces switching losses, and improves overall efficiency.
- **Package:** SOT23-6
- **Configuration:** Dual-P+P-Channel MOSFET
- **V_DS (drain-source voltage):** -20V
- **V_GS (gate-source voltage):** ±12V
- **V_th (gate threshold voltage):** -0.6V
- **R_DS(ON) (on-resistance):**
- 100mΩ @ V_GS = 2.5V
- 75mΩ @ V_GS = 4.5V
- **I_D (maximum drain current):** -4A
- **Technology:** Trench (trench technology)
**Electrical characteristics:**
- **Low on-resistance:** At V_GS = 4.5V When V_GS = 2.5V, R_DS(on) is 75mΩ, which can provide lower power loss and play an important role in efficient power conversion. When V_GS = 2.5V, R_DS(on) is 100mΩ, which is suitable for low voltage applications.
- **High current capability:** The maximum drain current is -4A, which can handle larger load currents and is suitable for use in higher current power management and switching control.
- **Wide gate-source voltage range:** The gate-source voltage range of this MOSFET is ±12V, which can adapt to a variety of voltage control requirements and is easy to integrate into various power and load switching circuits.
- **Trench technology:** The use of Trench technology optimizes the conduction performance, reduces switching losses, and improves overall efficiency.
Domain and module applications：
**Application fields and modules**
1. **Battery Management System (BMS):**
SI3981DV-T1-GE3-VB is very suitable for battery management system (BMS), especially in low voltage applications. Due to its low on-resistance and high current handling capability, this MOSFET can be used for battery charging control and load switching, effectively reducing power loss and extending battery life. For example, in the battery management module of electric vehicles (EV) or portable devices, SI3981DV-T1-GE3-VB can optimize the battery charging and discharging process and ensure that the battery operates in a safe and stable state.
2. **Power switching and power regulation:**
Due to its low R_DS(on) and efficient switching characteristics, SI3981DV-T1-GE3-VB is suitable for DC-DC converters and power regulators. It can efficiently control current flow and provide low-loss power management, especially in applications requiring multi-stage voltage conversion, such as when used in power modules of consumer electronic devices and communication equipment, which can improve the overall energy efficiency of the system.
3. **Load switch and current control: **
SI3981DV-T1-GE3-VB is an ideal load switch component and can be applied to intelligent power control systems. In various home appliances and consumer electronic devices, as part of the power management module, it can stably and efficiently control the connection and disconnection of the load to ensure that the system will not be subjected to excessive current shocks when the load is switched. For example, in the smart socket and automatic power control circuit in the smart home system, SI3981DV-T1-GE3-VB can stably perform the switching operation of the load and maintain low heat loss.
4. **LED driver: **
In LED lighting control systems, SI3981DV-T1-GE3-VB can be used in power switches and drivers to provide stable current regulation. Its low on-resistance enables it to reduce power loss, especially in high-efficiency LED drivers, which can significantly improve the overall efficiency of the system. In intelligent lighting systems, the use of this MOSFET can ensure that the LED lamp maintains a stable current during operation and improves energy efficiency through efficient power conversion.
5. **Smart home and portable devices: **
In smart home and portable electronic devices, SI3981DV-T1-GE3-VB can be used for intelligent battery management, charging control and power regulation. In smart speakers, smart watches and other devices, it can efficiently manage the battery charging and discharging process, extend battery life, and provide stable power output.
6. **Power management in low-voltage systems: **
SI3981DV-T1-GE3-VB is suitable for power management applications in low-voltage systems. For example, in 5V or 12V battery-powered devices, this MOSFET can be used to achieve current control and power management, which is particularly suitable for the design of low-voltage control circuits.
1. **Battery Management System (BMS):**
SI3981DV-T1-GE3-VB is very suitable for battery management system (BMS), especially in low voltage applications. Due to its low on-resistance and high current handling capability, this MOSFET can be used for battery charging control and load switching, effectively reducing power loss and extending battery life. For example, in the battery management module of electric vehicles (EV) or portable devices, SI3981DV-T1-GE3-VB can optimize the battery charging and discharging process and ensure that the battery operates in a safe and stable state.
2. **Power switching and power regulation:**
Due to its low R_DS(on) and efficient switching characteristics, SI3981DV-T1-GE3-VB is suitable for DC-DC converters and power regulators. It can efficiently control current flow and provide low-loss power management, especially in applications requiring multi-stage voltage conversion, such as when used in power modules of consumer electronic devices and communication equipment, which can improve the overall energy efficiency of the system.
3. **Load switch and current control: **
SI3981DV-T1-GE3-VB is an ideal load switch component and can be applied to intelligent power control systems. In various home appliances and consumer electronic devices, as part of the power management module, it can stably and efficiently control the connection and disconnection of the load to ensure that the system will not be subjected to excessive current shocks when the load is switched. For example, in the smart socket and automatic power control circuit in the smart home system, SI3981DV-T1-GE3-VB can stably perform the switching operation of the load and maintain low heat loss.
4. **LED driver: **
In LED lighting control systems, SI3981DV-T1-GE3-VB can be used in power switches and drivers to provide stable current regulation. Its low on-resistance enables it to reduce power loss, especially in high-efficiency LED drivers, which can significantly improve the overall efficiency of the system. In intelligent lighting systems, the use of this MOSFET can ensure that the LED lamp maintains a stable current during operation and improves energy efficiency through efficient power conversion.
5. **Smart home and portable devices: **
In smart home and portable electronic devices, SI3981DV-T1-GE3-VB can be used for intelligent battery management, charging control and power regulation. In smart speakers, smart watches and other devices, it can efficiently manage the battery charging and discharging process, extend battery life, and provide stable power output.
6. **Power management in low-voltage systems: **
SI3981DV-T1-GE3-VB is suitable for power management applications in low-voltage systems. For example, in 5V or 12V battery-powered devices, this MOSFET can be used to achieve current control and power management, which is particularly suitable for the design of low-voltage control circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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