SI3948DV-T1-GE3-VB Product details
Product introduction:
**SI3948DV-T1-GE3-VB** is a dual N+N-channel MOSFET in a **SOT23-6** package, suitable for high-efficiency power management, load switching and battery management systems. This MOSFET has a maximum drain-source voltage of **20V** and a maximum drain current of **6A**. It uses **Trench** technology to provide low on-resistance and excellent switching performance. The on-resistance **RDS(ON)** is **28mΩ** at **VGS=2.5V** and **22mΩ** at **VGS=4.5V**, making it extremely efficient during load switching. The gate-source turn-on voltage **Vth** ranges from **0.5V~1.5V**, allowing it to turn on quickly at low gate voltage, suitable for low-voltage drive applications. This MOSFET is suitable for applications requiring low losses, low temperature rise, and high current carrying capability, especially in **DC-DC converters**, **battery management systems**, and **load switch control**.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
- **Package type**: SOT23-6
- **Configuration**: Dual N+N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate-source turn-on voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- **28mΩ** @ VGS = 2.5V
- **22mΩ** @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench technology
Domain and module applications:
1. **DC-DC Converter**:
SI3948DV-T1-GE3-VB has low on-resistance and high current carrying capacity, making it ideal as a high-efficiency switching element in **DC-DC Converters**. Its fast switching speed and low loss performance enable it to optimize power conversion efficiency, especially for low-voltage to medium-voltage power conversion. By reducing power loss during power conversion, the overall efficiency of the system can be improved and heat generation can be reduced.
- **Application Examples**: Used in **smartphones, battery-powered devices, and power adapters** to help convert higher voltages (such as 12V) into stable low-voltage outputs (such as 5V or 3.3V) to power the load.
2. **Battery Management System (BMS)**:
SI3948DV-T1-GE3-VB is suitable for **Battery Management System (BMS)**, and its low on-resistance and high current capability enable it to efficiently control battery charging and discharging. The switching characteristics of MOSFET enable it to accurately regulate the current flow of the battery, ensuring the stability and safety of the battery system.
- **Application Examples**: In **power tools, electric vehicle battery management systems** or **energy storage systems**, MOSFETs can be used to manage charging current and battery discharge control, thereby extending battery life and improving charging and discharging efficiency.
3. **Load Switch Control**:
In low-power load switch applications, the low on-resistance and high switching speed of SI3948DV-T1-GE3-VB make it ideal as a **load switch** element. Whether turning the load on or off, MOSFETs provide stable and fast current control to ensure efficient system operation.
- **Application examples**: In **LED lighting, motor control modules** or **portable electronic devices**, MOSFET is used as a load switch to control the switching of current, helping to improve the efficiency of the power supply and reduce useless energy waste.
4. **Motor drive system**:
In **motor drive system**, the high efficiency and fast switching characteristics of SI3948DV-T1-GE3-VB enable it to play an important role in the speed control of the motor. MOSFET improves the overall efficiency of the motor drive system through efficient power conversion, reducing energy loss and heat generation.
- **Application examples**: In **DC power tools, electric vehicle drive systems**, MOSFET can be used for power regulation and start-up control of the motor, thereby achieving efficient motor control and longer equipment life.
5. **Power conversion and inverter applications**:
SI3948DV-T1-GE3-VB is suitable for **power converter** and **inverter** systems, especially in scenarios requiring lower voltage and higher efficiency. The MOSFET can provide efficient and low-loss current regulation during the frequently switched power conversion process, reducing the heat generated during the power conversion process.
- **Application example**: In **solar cell inverters and power converters**, MOSFET is responsible for converting DC power to AC output or stabilizing the voltage to ensure stable and efficient operation of the power system.
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