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SI3915DV-T1-GE3-VB Product details
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Product Introduction:
SI3915DV-T1-GE3 is a dual P-channel MOSFET launched by Vishay. It adopts SOT23-6 package and is widely used in low-voltage power management, load switching, and reverse current protection applications. This product adopts Trench technology and has a lower on-resistance (RDS(ON)), which can provide efficient current control, reduce power consumption and improve power efficiency. Its maximum drain-source voltage (VDS) is -20V, the maximum drain current (ID) is -4A, and the threshold voltage (Vth) is -0.6V. Due to its low RDS(ON) and efficient current control capability, this MOSFET is particularly suitable for battery-powered systems, load switching circuits, DC-DC converters and battery protection applications.
SI3915DV-T1-GE3 is a dual P-channel MOSFET launched by Vishay. It adopts SOT23-6 package and is widely used in low-voltage power management, load switching, and reverse current protection applications. This product adopts Trench technology and has a lower on-resistance (RDS(ON)), which can provide efficient current control, reduce power consumption and improve power efficiency. Its maximum drain-source voltage (VDS) is -20V, the maximum drain current (ID) is -4A, and the threshold voltage (Vth) is -0.6V. Due to its low RDS(ON) and efficient current control capability, this MOSFET is particularly suitable for battery-powered systems, load switching circuits, DC-DC converters and battery protection applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description:
- **Model**: SI3915DV-T1-GE3
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: -4A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Application**:
- Load switch
- Power Management
- Battery Protection
- Battery Powered Systems
- Reverse Current Protection
- Low Voltage Load Control
- **Model**: SI3915DV-T1-GE3
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: -4A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Application**:
- Load switch
- Power Management
- Battery Protection
- Battery Powered Systems
- Reverse Current Protection
- Low Voltage Load Control
Domain and module applications：
Application fields and module examples:
1. **Load switch and power management**:
SI3915DV-T1-GE3 MOSFET is very suitable for various low-voltage load switch applications, especially in portable devices and battery-driven systems. It can efficiently control the switch between the battery power supply and the load, ensuring the stability of the power supply when the load is enabled or disconnected. Due to its low RDS(ON) value, it reduces the heat generated during the switching process and is suitable for battery-powered electronic devices, power tools, smart home control systems and other scenarios.
2. **Battery protection system**:
In the battery management system, SI3915DV-T1-GE3 MOSFET can be used for battery protection and management. It can provide efficient current control during battery charging and discharging to avoid battery overcharge, over-discharge or over-current damage. It is especially suitable for mobile devices, wearable devices, smart phones and other products with high battery performance requirements. The low RDS(ON) characteristics ensure high efficiency during battery use and extend battery life.
3. **DC-DC Converter**:
Due to its low on-resistance and high efficiency, SI3915DV-T1-GE3 MOSFET is widely used in DC-DC converters for efficient conversion and management of power. It is able to provide a stable current output and ensure the efficiency of voltage conversion, and is particularly suitable for applications such as high-efficiency power adapters, power modules and power tools. The dual P-channel structure of the MOSFET makes it suitable for controlling multiple voltage outputs in complex power supply designs.
4. **Reverse Current Protection and Protection Circuit**:
The MOSFET can also be used as a reverse current protection switch to avoid damage caused by improper access to the power supply in power supply design. Especially in battery-powered systems, it can prevent circuit damage caused by incorrect access. Reverse current protection is critical in fields such as mobile devices, automotive electronics and power tools.
5. **Smart Home and Wearable Devices**:
The low power consumption characteristics of the SI3915DV-T1-GE3 MOSFET make it ideal for efficient power management of battery-powered devices such as smart sockets, smart lamps, and home appliances, as well as wearable devices such as smart watches and fitness trackers. Its efficient load switch control enables these devices to operate longer without compromising performance or battery life.
6. **Automotive Electronics and Electric Transportation**:
The SI3915DV-T1-GE3 MOSFET is used for battery protection and power management in electric vehicles (EVs), hybrid electric vehicles (HEVs), and other electric transportation vehicles. The MOSFET ensures the safety of the battery during charging and discharging through efficient current control, and plays a key role in the battery management system (BMS) of electric vehicles.
1. **Load switch and power management**:
SI3915DV-T1-GE3 MOSFET is very suitable for various low-voltage load switch applications, especially in portable devices and battery-driven systems. It can efficiently control the switch between the battery power supply and the load, ensuring the stability of the power supply when the load is enabled or disconnected. Due to its low RDS(ON) value, it reduces the heat generated during the switching process and is suitable for battery-powered electronic devices, power tools, smart home control systems and other scenarios.
2. **Battery protection system**:
In the battery management system, SI3915DV-T1-GE3 MOSFET can be used for battery protection and management. It can provide efficient current control during battery charging and discharging to avoid battery overcharge, over-discharge or over-current damage. It is especially suitable for mobile devices, wearable devices, smart phones and other products with high battery performance requirements. The low RDS(ON) characteristics ensure high efficiency during battery use and extend battery life.
3. **DC-DC Converter**:
Due to its low on-resistance and high efficiency, SI3915DV-T1-GE3 MOSFET is widely used in DC-DC converters for efficient conversion and management of power. It is able to provide a stable current output and ensure the efficiency of voltage conversion, and is particularly suitable for applications such as high-efficiency power adapters, power modules and power tools. The dual P-channel structure of the MOSFET makes it suitable for controlling multiple voltage outputs in complex power supply designs.
4. **Reverse Current Protection and Protection Circuit**:
The MOSFET can also be used as a reverse current protection switch to avoid damage caused by improper access to the power supply in power supply design. Especially in battery-powered systems, it can prevent circuit damage caused by incorrect access. Reverse current protection is critical in fields such as mobile devices, automotive electronics and power tools.
5. **Smart Home and Wearable Devices**:
The low power consumption characteristics of the SI3915DV-T1-GE3 MOSFET make it ideal for efficient power management of battery-powered devices such as smart sockets, smart lamps, and home appliances, as well as wearable devices such as smart watches and fitness trackers. Its efficient load switch control enables these devices to operate longer without compromising performance or battery life.
6. **Automotive Electronics and Electric Transportation**:
The SI3915DV-T1-GE3 MOSFET is used for battery protection and power management in electric vehicles (EVs), hybrid electric vehicles (HEVs), and other electric transportation vehicles. The MOSFET ensures the safety of the battery during charging and discharging through efficient current control, and plays a key role in the battery management system (BMS) of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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