中文
English
SI3905DV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
SI3905DV-T1-GE3-VB MOSFET Product Introduction
SI3905DV-T1-GE3-VB is a high-efficiency bipolar P+P-channel MOSFET launched by **Vishay**, packaged in **SOT23-6**. This MOSFET adopts **Trench** technology, has low on-resistance and high current carrying capacity, and is very suitable for efficient power management, battery management and load switch control. Its drain-source voltage (V_DS) is -20V, gate-source voltage (V_GS) is ±12V, and gate threshold voltage (V_th) is -0.6V, ensuring stable operation in low-voltage applications. The on-resistance (R_DS(ON)) is 100mΩ (at V_GS=2.5V) and 75mΩ (at V_GS=4.5V), and the maximum leakage current (I_D) is -4A, which is suitable for various applications requiring low power consumption and high efficiency.
SI3905DV-T1-GE3-VB is a high-efficiency bipolar P+P-channel MOSFET launched by **Vishay**, packaged in **SOT23-6**. This MOSFET adopts **Trench** technology, has low on-resistance and high current carrying capacity, and is very suitable for efficient power management, battery management and load switch control. Its drain-source voltage (V_DS) is -20V, gate-source voltage (V_GS) is ±12V, and gate threshold voltage (V_th) is -0.6V, ensuring stable operation in low-voltage applications. The on-resistance (R_DS(ON)) is 100mΩ (at V_GS=2.5V) and 75mΩ (at V_GS=4.5V), and the maximum leakage current (I_D) is -4A, which is suitable for various applications requiring low power consumption and high efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
SI3905DV-T1-GE3-VB MOSFET detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Bipolar P+P-channel MOSFET
- **Drain-source voltage (V_DS)**: -20V
- **Gate-source voltage (V_GS)**: ±12V
- **Gate threshold voltage (V_th)**: -0.6V
- **On-resistance (R_DS(ON))**:
- 100mΩ (at V_GS=2.5V)
- 75mΩ (at V_GS=4.5V)
- **Maximum leakage current (I_D)**: -4A
- **Technology**: Trench
- **Typical applications**: power management, battery management, load switching, motor control, etc.
- **Package**: SOT23-6
- **Configuration**: Bipolar P+P-channel MOSFET
- **Drain-source voltage (V_DS)**: -20V
- **Gate-source voltage (V_GS)**: ±12V
- **Gate threshold voltage (V_th)**: -0.6V
- **On-resistance (R_DS(ON))**:
- 100mΩ (at V_GS=2.5V)
- 75mΩ (at V_GS=4.5V)
- **Maximum leakage current (I_D)**: -4A
- **Technology**: Trench
- **Typical applications**: power management, battery management, load switching, motor control, etc.
Domain and module applications：
Application fields and module examples: 1. **Power management system**: SI3905DV-T1-GE3-VB can be widely used in efficient power management systems. Due to its low on-resistance and high current carrying capacity, it is very suitable for DC-DC converters, power regulators and power distribution networks. Especially in portable devices, battery-powered systems and embedded systems, SI3905DV-T1-GE3-VB can achieve low power consumption and high-efficiency power conversion, improve system efficiency and extend battery life. 2. **Battery management and protection system**: In the battery management system (BMS), SI3905DV-T1-GE3-VB can be used as a switching element for the battery, control the battery charging and discharging process, and provide overcharge and over-discharge protection for the battery. Its low on-resistance enables the battery management system to generate less heat during operation, which is suitable for power tools, electric vehicles, electric vehicles and other battery-driven devices.
3. **Load switch applications**:
This MOSFET performs well in load switch applications and can be used as an efficient current switching element. In low-power devices, especially where fast switching and high efficiency are required, the SI3905DV-T1-GE3-VB can be used for LED driving, sensor interfaces, power switches and other load switch applications.
4. **Motor control systems**:
In motor drive circuits, the SI3905DV-T1-GE3-VB can be used as a switch control element for motors. It has a wide range of applications in the start-stop control and speed regulation of low-power motors, especially for low-power motor control in home appliances, robots and automation equipment.
5. **Intelligent control and automation systems**:
In intelligent control systems and automation equipment, the SI3905DV-T1-GE3-VB can be used as a key switching element for power management and load control. It is suitable for smart home devices, sensor systems, industrial automation equipment and other fields, and can provide efficient power conversion and load switching to ensure the stability and efficient operation of the equipment.
6. **Load switching and current protection**:
Due to its bipolar structure, SI3905DV-T1-GE3-VB can be used in load switching and current protection systems, especially for multi-channel load management. When multiple circuits require efficient current switching, it can ensure the stable operation of the system and is widely used in multi-channel power distribution, intelligent power management and low-power systems.
3. **Load switch applications**:
This MOSFET performs well in load switch applications and can be used as an efficient current switching element. In low-power devices, especially where fast switching and high efficiency are required, the SI3905DV-T1-GE3-VB can be used for LED driving, sensor interfaces, power switches and other load switch applications.
4. **Motor control systems**:
In motor drive circuits, the SI3905DV-T1-GE3-VB can be used as a switch control element for motors. It has a wide range of applications in the start-stop control and speed regulation of low-power motors, especially for low-power motor control in home appliances, robots and automation equipment.
5. **Intelligent control and automation systems**:
In intelligent control systems and automation equipment, the SI3905DV-T1-GE3-VB can be used as a key switching element for power management and load control. It is suitable for smart home devices, sensor systems, industrial automation equipment and other fields, and can provide efficient power conversion and load switching to ensure the stability and efficient operation of the equipment.
6. **Load switching and current protection**:
Due to its bipolar structure, SI3905DV-T1-GE3-VB can be used in load switching and current protection systems, especially for multi-channel load management. When multiple circuits require efficient current switching, it can ensure the stable operation of the system and is widely used in multi-channel power distribution, intelligent power management and low-power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
