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SI3867DV-T1-GE3-VB Product details
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SI3867DV-T1-GE3-VB MOSFET Product Introduction
SI3867DV-T1-GE3-VB is a single P-channel MOSFET in a SOT23-6 package, designed for low to medium power applications. With a maximum drain-source voltage of -30V and a maximum gate-source voltage of ±20V, this MOSFET is suitable for power management systems that require precise current control and high-efficiency switching. The threshold voltage (V_th) is -1.7V, ensuring reliable operation at appropriate gate-source voltages.
The on-resistance (R_DS(ON)) is 54mΩ at V_GS = 4.5V and 49mΩ at V_GS = 10V, indicating low energy losses during operation. The maximum drain current (I_D) is -4.8A, suitable for medium current loads and switching applications. SI3867DV-T1-GE3-VB adopts Trench technology, providing higher switching speed and low on-resistance, which can effectively improve power conversion efficiency and reduce system power consumption. It is widely used in power management, load switching, LED drive and electric drive.
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SI3867DV-T1-GE3-VB is a single P-channel MOSFET in a SOT23-6 package, designed for low to medium power applications. With a maximum drain-source voltage of -30V and a maximum gate-source voltage of ±20V, this MOSFET is suitable for power management systems that require precise current control and high-efficiency switching. The threshold voltage (V_th) is -1.7V, ensuring reliable operation at appropriate gate-source voltages.
The on-resistance (R_DS(ON)) is 54mΩ at V_GS = 4.5V and 49mΩ at V_GS = 10V, indicating low energy losses during operation. The maximum drain current (I_D) is -4.8A, suitable for medium current loads and switching applications. SI3867DV-T1-GE3-VB adopts Trench technology, providing higher switching speed and low on-resistance, which can effectively improve power conversion efficiency and reduce system power consumption. It is widely used in power management, load switching, LED drive and electric drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
SI3867DV-T1-GE3-VB MOSFET Detailed parameter description
- **Model**: SI3867DV-T1-GE3-VB
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- At V_GS = 4.5V, R_DS(ON) = 54mΩ
- At V_GS = 10V, R_DS(ON) = 49mΩ
- **Maximum drain current (I_D)**: -4.8A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package type**: SOT23-6
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- **Model**: SI3867DV-T1-GE3-VB
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- At V_GS = 4.5V, R_DS(ON) = 54mΩ
- At V_GS = 10V, R_DS(ON) = 49mΩ
- **Maximum drain current (I_D)**: -4.8A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package type**: SOT23-6
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Domain and module applications：
SI3867DV-T1-GE3-VB MOSFET Applications and Modules
1. **Power Management System**
SI3867DV-T1-GE3-VB MOSFET can be used in DC-DC converters, power supply voltage regulator modules and battery charging management systems. In these power management applications, the MOSFET acts as an efficient power switch to help the power system achieve efficient voltage conversion and regulation. Its low on-resistance characteristics can significantly reduce power loss and improve the conversion efficiency of the entire power system. It is suitable for consumer electronics, communication equipment and portable electronic devices.
2. **Load Switch Application**
In the load switch circuit, SI3867DV-T1-GE3-VB MOSFET can be used for load management, load isolation and battery protection of battery-powered devices. Its low on-resistance and high current carrying capacity make it an ideal switching element in low-power devices and battery management systems. For example, in smart home devices and portable devices, it can effectively control the switching of loads, extend battery life, and improve system energy efficiency and stability.
3. **LED drive circuit**
SI3867DV-T1-GE3-VB is widely used in LED drive circuits, especially for high-efficiency LED lighting systems. The low on-resistance and fast switching performance of MOSFET can help reduce the energy loss and heat generation of the system, thereby improving the performance and lighting efficiency of the overall system. Its efficient energy conversion capability is particularly suitable for lighting systems that require high efficiency and energy saving, such as smart lighting, architectural lighting and road lighting.
4. **Electric drive system**
SI3867DV-T1-GE3-VB is suitable for electric drive systems such as power tools, electric bicycles, and electric toys, as a switching element to control the start and stop, speed regulation and other functions of the motor. Its high efficiency and high current carrying capacity enable it to provide efficient and stable performance in electric drive systems, especially for applications that require high efficiency and low energy consumption.
5. **Automotive Electronic Systems**
In automotive electronic applications, SI3867DV-T1-GE3-VB can be used as a switching element in battery management systems, on-board power converters, and electric drive systems. Its low on-resistance and high current carrying capacity make it an ideal choice for on-board electronic devices, which can improve the efficiency of power management systems and ensure the efficient operation of automotive electronic systems.
6. **Consumer Electronics**
In smartphones, tablets, portable audio and other consumer electronic products, SI3867DV-T1-GE3-VB is used as a battery management and power switching element to help improve battery life and system efficiency. Its high switching efficiency and low power loss characteristics help extend the use time of the device while maintaining system stability and reliability, improving user experience.
7. **Industrial Control Systems**
SI3867DV-T1-GE3-VB can also be used in industrial automation, robotics, production line control and other fields. In these industrial applications, MOSFETs are used to drive high-power devices, control loads, and provide precise current management. Their high current carrying capacity and fast switching performance are very suitable for high-efficiency and high-reliability industrial control systems.
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SI3867DV-T1-GE3-VB MOSFET is widely used in power management, load switching, LED driving, electric drive systems and consumer electronics due to its low on-resistance, high switching efficiency and excellent current handling capability. Its efficient power conversion and low energy loss characteristics make it an ideal power switch component in modern electronic systems, especially for applications requiring high energy efficiency, long battery life and high system stability.
1. **Power Management System**
SI3867DV-T1-GE3-VB MOSFET can be used in DC-DC converters, power supply voltage regulator modules and battery charging management systems. In these power management applications, the MOSFET acts as an efficient power switch to help the power system achieve efficient voltage conversion and regulation. Its low on-resistance characteristics can significantly reduce power loss and improve the conversion efficiency of the entire power system. It is suitable for consumer electronics, communication equipment and portable electronic devices.
2. **Load Switch Application**
In the load switch circuit, SI3867DV-T1-GE3-VB MOSFET can be used for load management, load isolation and battery protection of battery-powered devices. Its low on-resistance and high current carrying capacity make it an ideal switching element in low-power devices and battery management systems. For example, in smart home devices and portable devices, it can effectively control the switching of loads, extend battery life, and improve system energy efficiency and stability.
3. **LED drive circuit**
SI3867DV-T1-GE3-VB is widely used in LED drive circuits, especially for high-efficiency LED lighting systems. The low on-resistance and fast switching performance of MOSFET can help reduce the energy loss and heat generation of the system, thereby improving the performance and lighting efficiency of the overall system. Its efficient energy conversion capability is particularly suitable for lighting systems that require high efficiency and energy saving, such as smart lighting, architectural lighting and road lighting.
4. **Electric drive system**
SI3867DV-T1-GE3-VB is suitable for electric drive systems such as power tools, electric bicycles, and electric toys, as a switching element to control the start and stop, speed regulation and other functions of the motor. Its high efficiency and high current carrying capacity enable it to provide efficient and stable performance in electric drive systems, especially for applications that require high efficiency and low energy consumption.
5. **Automotive Electronic Systems**
In automotive electronic applications, SI3867DV-T1-GE3-VB can be used as a switching element in battery management systems, on-board power converters, and electric drive systems. Its low on-resistance and high current carrying capacity make it an ideal choice for on-board electronic devices, which can improve the efficiency of power management systems and ensure the efficient operation of automotive electronic systems.
6. **Consumer Electronics**
In smartphones, tablets, portable audio and other consumer electronic products, SI3867DV-T1-GE3-VB is used as a battery management and power switching element to help improve battery life and system efficiency. Its high switching efficiency and low power loss characteristics help extend the use time of the device while maintaining system stability and reliability, improving user experience.
7. **Industrial Control Systems**
SI3867DV-T1-GE3-VB can also be used in industrial automation, robotics, production line control and other fields. In these industrial applications, MOSFETs are used to drive high-power devices, control loads, and provide precise current management. Their high current carrying capacity and fast switching performance are very suitable for high-efficiency and high-reliability industrial control systems.
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SI3867DV-T1-GE3-VB MOSFET is widely used in power management, load switching, LED driving, electric drive systems and consumer electronics due to its low on-resistance, high switching efficiency and excellent current handling capability. Its efficient power conversion and low energy loss characteristics make it an ideal power switch component in modern electronic systems, especially for applications requiring high energy efficiency, long battery life and high system stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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