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SI3495DV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
**SI3495DV-T1-GE3** is a single P-channel MOSFET in a SOT23-6 package with low on-resistance and high efficiency, making it particularly suitable for low-power power management applications. The device has a maximum drain-source voltage (V_DS) of -30V and a maximum gate-source voltage (V_GS) of ±20V. The threshold voltage (V_th) is -1.7V, the on-resistance (R_DS(ON)) is 54mΩ at V_GS = 4.5V, 49mΩ at V_GS = 10V, and the maximum drain current (I_D) is -4.8A. It uses Trench technology to provide low power consumption and high efficiency, suitable for high-frequency applications, and has good thermal management capabilities, and can provide stable performance in a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Product parameters:
- **Package: ** SOT23-6
- **Configuration: ** Single P channel
- **V_DS: ** -30V
- **V_GS: ** ±20V
- **V_th: ** -1.7V
- **R_DS(ON): ** 54mΩ at V_GS = 4.5V, 49mΩ at V_GS = 10V
- **I_D (max): ** -4.8A
- **Technology: ** Trench technology
- **Package: ** SOT23-6
- **Configuration: ** Single P channel
- **V_DS: ** -30V
- **V_GS: ** ±20V
- **V_th: ** -1.7V
- **R_DS(ON): ** 54mΩ at V_GS = 4.5V, 49mΩ at V_GS = 10V
- **I_D (max): ** -4.8A
- **Technology: ** Trench technology
Domain and module applications：
Applications:
1. **Portable Electronic Devices:** Due to its low R_DS(ON), **SI3495DV-T1-GE3** is very suitable for power management systems in portable electronic devices, such as smartphones, tablets, wearable devices, etc. The low on-resistance characteristic effectively reduces power loss and extends battery life, especially suitable for small electronic devices with high performance requirements.
2. **DC-DC Converter and Power Management:** In DC-DC converters and other power management applications, **SI3495DV-T1-GE3** can be used as a load switch or power switch to provide efficient power conversion at high frequency and low voltage. Its low on-resistance helps reduce energy loss and improve conversion efficiency, and is widely used in battery-powered devices such as mobile power supplies, portable electronic products, etc.
3. **Battery Management System (BMS):** This MOSFET can be used in battery management systems for battery charging and discharging control, helping to manage the battery's health status and charging efficiency. Its high performance and low power consumption make it particularly suitable for lithium battery management systems, portable battery devices and battery protection circuits.
4. **LED driving and power protection:** In LED driving circuits, **SI3495DV-T1-GE3** provides efficient current control and is particularly suitable for low-voltage, high-performance LED lighting systems. The low R_DS(ON) feature effectively reduces power loss and heat output, improving the overall performance of the system. In addition, as part of the overcurrent protection circuit, it can effectively protect the system from overcurrent damage.
5. **Automotive electronics:** In automotive electronic systems, **SI3495DV-T1-GE3** can be used for in-vehicle power distribution and battery management systems. Its low power consumption and high current carrying capacity make it ideal for battery management, power protection and other in-vehicle power management applications, helping to reduce power loss and ensure efficient and safe operation of in-vehicle systems.
In general, **SI3495DV-T1-GE3** is a P-channel MOSFET with excellent performance and low power consumption. It is widely used in portable devices, power management, LED driving and battery management, and can meet various requirements for high efficiency, low power loss and high stability.
1. **Portable Electronic Devices:** Due to its low R_DS(ON), **SI3495DV-T1-GE3** is very suitable for power management systems in portable electronic devices, such as smartphones, tablets, wearable devices, etc. The low on-resistance characteristic effectively reduces power loss and extends battery life, especially suitable for small electronic devices with high performance requirements.
2. **DC-DC Converter and Power Management:** In DC-DC converters and other power management applications, **SI3495DV-T1-GE3** can be used as a load switch or power switch to provide efficient power conversion at high frequency and low voltage. Its low on-resistance helps reduce energy loss and improve conversion efficiency, and is widely used in battery-powered devices such as mobile power supplies, portable electronic products, etc.
3. **Battery Management System (BMS):** This MOSFET can be used in battery management systems for battery charging and discharging control, helping to manage the battery's health status and charging efficiency. Its high performance and low power consumption make it particularly suitable for lithium battery management systems, portable battery devices and battery protection circuits.
4. **LED driving and power protection:** In LED driving circuits, **SI3495DV-T1-GE3** provides efficient current control and is particularly suitable for low-voltage, high-performance LED lighting systems. The low R_DS(ON) feature effectively reduces power loss and heat output, improving the overall performance of the system. In addition, as part of the overcurrent protection circuit, it can effectively protect the system from overcurrent damage.
5. **Automotive electronics:** In automotive electronic systems, **SI3495DV-T1-GE3** can be used for in-vehicle power distribution and battery management systems. Its low power consumption and high current carrying capacity make it ideal for battery management, power protection and other in-vehicle power management applications, helping to reduce power loss and ensure efficient and safe operation of in-vehicle systems.
In general, **SI3495DV-T1-GE3** is a P-channel MOSFET with excellent performance and low power consumption. It is widely used in portable devices, power management, LED driving and battery management, and can meet various requirements for high efficiency, low power loss and high stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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