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SI3495DV-T1-E3-VB Product details
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Product Introduction:
SI3495DV-T1-E3 is a single P-channel MOSFET launched by Vishay. It adopts SOT23-6 package and is suitable for medium and low voltage circuits, especially applications requiring low power consumption and high efficiency. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and it can withstand a maximum drain current (ID) of -4.8A. Its on-resistance (RDS(ON)) is 54mΩ@VGS=4.5V and 49mΩ@VGS=10V, providing low-power switching performance. SI3495DV-T1-E3 uses Trench technology, which has low switching loss and efficient power conversion capability. The threshold voltage (Vth) is -1.7V, which is suitable for low-voltage drive applications. This MOSFET is suitable for power management, load switching, battery protection, reverse voltage protection and other fields, and can provide stable performance in environments requiring high efficiency and low loss.
SI3495DV-T1-E3 is a single P-channel MOSFET launched by Vishay. It adopts SOT23-6 package and is suitable for medium and low voltage circuits, especially applications requiring low power consumption and high efficiency. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and it can withstand a maximum drain current (ID) of -4.8A. Its on-resistance (RDS(ON)) is 54mΩ@VGS=4.5V and 49mΩ@VGS=10V, providing low-power switching performance. SI3495DV-T1-E3 uses Trench technology, which has low switching loss and efficient power conversion capability. The threshold voltage (Vth) is -1.7V, which is suitable for low-voltage drive applications. This MOSFET is suitable for power management, load switching, battery protection, reverse voltage protection and other fields, and can provide stable performance in environments requiring high efficiency and low loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
- **Model**: SI3495DV-T1-E3
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Applications**: load switch, reverse voltage protection, battery protection circuit, power management, etc.
- **Model**: SI3495DV-T1-E3
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Applications**: load switch, reverse voltage protection, battery protection circuit, power management, etc.
Domain and module applications：
Application fields and module examples:
1. **Load switch application**:
SI3495DV-T1-E3 MOSFET is widely used in load switch circuits, especially for low voltage load control. In low power devices, Internet of Things (IoT) devices, smart sensors and wearable devices, this MOSFET provides efficient load switch control, which can reduce power consumption and improve power efficiency, extending the battery life of the device.
2. **Battery protection circuit**:
In the battery management system (BMS), SI3495DV-T1-E3 MOSFET is a key component in the battery protection circuit. Its low on-resistance ensures efficient energy transfer during battery charging and discharging, while preventing battery overcharge, over discharge and short circuit. It is suitable for the protection of rechargeable batteries such as lithium batteries and nickel-metal hydride batteries, and is widely used in products such as power tools, electric bicycles, and portable power supplies.
3. **Reverse Voltage Protection**:
SI3495DV-T1-E3 MOSFET is also suitable for reverse voltage protection applications. In battery packs, solar panels, electric vehicles and various electronic devices, MOSFET can automatically cut off the current when the power polarity is reversed to prevent circuit damage. Due to its low RDS(ON), the MOSFET can maintain low power consumption and high efficiency during the protection process.
4. **Power Management**:
As a switching element in the power management system, SI3495DV-T1-E3 MOSFET can efficiently regulate power input and output, especially in DC-DC converters, battery chargers and low-voltage power adapters. Its low on-resistance (RDS(ON)) reduces power loss and helps improve the overall efficiency of the system, making it suitable for high-efficiency power management systems.
5. **High-efficiency power conversion**:
SI3495DV-T1-E3 MOSFET is ideal for high-efficiency power conversion applications, especially in DC-DC converters, power adapters and battery management systems. Its low RDS(ON) value can reduce conduction losses, improve power conversion efficiency, reduce heat generation, and ensure stable system operation.
6. **Automotive electronics**:
In automotive electronic systems, SI3495DV-T1-E3 MOSFET can be used in battery management systems, power management, reverse voltage protection and other applications. Its high withstand voltage capability and low on-resistance make it excellent in harsh environments, protecting batteries and managing power in applications such as electric vehicles (EVs) and hybrid electric vehicles (HEVs).
7. **Smart home and wearable devices**:
SI3495DV-T1-E3 MOSFET is suitable for smart home devices, battery-powered consumer electronics and wearable devices. In these applications, MOSFET can provide efficient battery protection, load switching and power management, extend the service life of the equipment and ensure the efficient operation of the power system. It is very suitable for smart watches, smart headphones, home automation equipment, etc.
1. **Load switch application**:
SI3495DV-T1-E3 MOSFET is widely used in load switch circuits, especially for low voltage load control. In low power devices, Internet of Things (IoT) devices, smart sensors and wearable devices, this MOSFET provides efficient load switch control, which can reduce power consumption and improve power efficiency, extending the battery life of the device.
2. **Battery protection circuit**:
In the battery management system (BMS), SI3495DV-T1-E3 MOSFET is a key component in the battery protection circuit. Its low on-resistance ensures efficient energy transfer during battery charging and discharging, while preventing battery overcharge, over discharge and short circuit. It is suitable for the protection of rechargeable batteries such as lithium batteries and nickel-metal hydride batteries, and is widely used in products such as power tools, electric bicycles, and portable power supplies.
3. **Reverse Voltage Protection**:
SI3495DV-T1-E3 MOSFET is also suitable for reverse voltage protection applications. In battery packs, solar panels, electric vehicles and various electronic devices, MOSFET can automatically cut off the current when the power polarity is reversed to prevent circuit damage. Due to its low RDS(ON), the MOSFET can maintain low power consumption and high efficiency during the protection process.
4. **Power Management**:
As a switching element in the power management system, SI3495DV-T1-E3 MOSFET can efficiently regulate power input and output, especially in DC-DC converters, battery chargers and low-voltage power adapters. Its low on-resistance (RDS(ON)) reduces power loss and helps improve the overall efficiency of the system, making it suitable for high-efficiency power management systems.
5. **High-efficiency power conversion**:
SI3495DV-T1-E3 MOSFET is ideal for high-efficiency power conversion applications, especially in DC-DC converters, power adapters and battery management systems. Its low RDS(ON) value can reduce conduction losses, improve power conversion efficiency, reduce heat generation, and ensure stable system operation.
6. **Automotive electronics**:
In automotive electronic systems, SI3495DV-T1-E3 MOSFET can be used in battery management systems, power management, reverse voltage protection and other applications. Its high withstand voltage capability and low on-resistance make it excellent in harsh environments, protecting batteries and managing power in applications such as electric vehicles (EVs) and hybrid electric vehicles (HEVs).
7. **Smart home and wearable devices**:
SI3495DV-T1-E3 MOSFET is suitable for smart home devices, battery-powered consumer electronics and wearable devices. In these applications, MOSFET can provide efficient battery protection, load switching and power management, extend the service life of the equipment and ensure the efficient operation of the power system. It is very suitable for smart watches, smart headphones, home automation equipment, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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