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SI3493BDV-T1-GE3-VB Product details
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SI3493BDV-T1-GE3-VB MOSFET Product Introduction
SI3493BDV-T1-GE3-VB is a high-efficiency unipolar P-channel MOSFET launched by **Vishay**. It adopts **SOT23-6** package and has low on-resistance and high current carrying capacity. This MOSFET is designed for efficient power management, battery management, load switch control and other low-voltage applications. Its drain-source voltage (V_DS) is rated at -30V, the gate-source voltage (V_GS) is ±20V, and the gate threshold voltage (V_th) is -1.7V, ensuring that it works efficiently and reliably in multiple low-voltage applications. Using **Trench** technology, it can provide excellent switching performance and low on-resistance, which are 54mΩ (V_GS=4.5V) and 49mΩ (V_GS=10V) respectively. The maximum drain current (I_D) is -4.8A, which is suitable for a variety of applications requiring high current and low power consumption.
SI3493BDV-T1-GE3-VB is a high-efficiency unipolar P-channel MOSFET launched by **Vishay**. It adopts **SOT23-6** package and has low on-resistance and high current carrying capacity. This MOSFET is designed for efficient power management, battery management, load switch control and other low-voltage applications. Its drain-source voltage (V_DS) is rated at -30V, the gate-source voltage (V_GS) is ±20V, and the gate threshold voltage (V_th) is -1.7V, ensuring that it works efficiently and reliably in multiple low-voltage applications. Using **Trench** technology, it can provide excellent switching performance and low on-resistance, which are 54mΩ (V_GS=4.5V) and 49mΩ (V_GS=10V) respectively. The maximum drain current (I_D) is -4.8A, which is suitable for a variety of applications requiring high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
SI3493BDV-T1-GE3-VB MOSFET detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Unipolar P-channel MOSFET
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 54mΩ (at V_GS=4.5V)
- 49mΩ (at V_GS=10V)
- **Maximum leakage current (I_D)**: -4.8A
- **Technology**: Trench
- **Application areas**: power management, load switch, battery management, intelligent control system, etc.
- **Package**: SOT23-6
- **Configuration**: Unipolar P-channel MOSFET
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 54mΩ (at V_GS=4.5V)
- 49mΩ (at V_GS=10V)
- **Maximum leakage current (I_D)**: -4.8A
- **Technology**: Trench
- **Application areas**: power management, load switch, battery management, intelligent control system, etc.
Domain and module applications：
Application fields and module examples
1. **Power management system**:
SI3493BDV-T1-GE3-VB's low on-resistance enables it to provide efficient power conversion in power management systems. It can be used in high-efficiency power switches, buck converters, boost converters, etc. to reduce power loss and improve system efficiency. It is widely used in portable devices, battery-powered devices, embedded systems, and smart home systems.
2. **Battery management and protection**:
In the battery management system (BMS), SI3493BDV-T1-GE3-VB can be used as a switching element for the battery to control the battery charging and discharging process and ensure that the battery operates within a safe range. It is suitable for power tools, electric vehicles, electric vehicles and other battery-driven devices to provide overcharge, over-discharge protection and battery voltage regulation.
3. **Load switch applications**:
Due to its low R_DS(ON), SI3493BDV-T1-GE3-VB has significant advantages in load switch applications. It can be used for load switching, current protection, current limiting and other applications, and is widely used in LED drivers, sensor interfaces, switching power supplies and other load switch control systems.
4. **Intelligent control and automation systems**:
SI3493BDV-T1-GE3-VB can be used as a current switch in the field of intelligent control and automation, and plays a role in smart home systems, industrial automation equipment, robot control systems and other occasions. It can help achieve efficient power control and load switching, optimize system performance, and ensure stable operation of equipment.
5. **DC-DC power converter**:
In DC-DC power converter applications, the low on-resistance of SI3493BDV-T1-GE3-VB ensures high efficiency of the converter, suitable for buck and boost power converters. These converters are widely used in various electronic devices, such as communication base stations, embedded systems, vehicle power supplies, solar panel systems, etc.
6. **Motor Control**:
This MOSFET is widely used in motor control systems, especially in low-power motor drive circuits. By acting as a switching element for the motor, it can achieve start-stop control and speed regulation of the motor. Its high efficiency characteristics make it widely used in home appliances, automation equipment and robots.
1. **Power management system**:
SI3493BDV-T1-GE3-VB's low on-resistance enables it to provide efficient power conversion in power management systems. It can be used in high-efficiency power switches, buck converters, boost converters, etc. to reduce power loss and improve system efficiency. It is widely used in portable devices, battery-powered devices, embedded systems, and smart home systems.
2. **Battery management and protection**:
In the battery management system (BMS), SI3493BDV-T1-GE3-VB can be used as a switching element for the battery to control the battery charging and discharging process and ensure that the battery operates within a safe range. It is suitable for power tools, electric vehicles, electric vehicles and other battery-driven devices to provide overcharge, over-discharge protection and battery voltage regulation.
3. **Load switch applications**:
Due to its low R_DS(ON), SI3493BDV-T1-GE3-VB has significant advantages in load switch applications. It can be used for load switching, current protection, current limiting and other applications, and is widely used in LED drivers, sensor interfaces, switching power supplies and other load switch control systems.
4. **Intelligent control and automation systems**:
SI3493BDV-T1-GE3-VB can be used as a current switch in the field of intelligent control and automation, and plays a role in smart home systems, industrial automation equipment, robot control systems and other occasions. It can help achieve efficient power control and load switching, optimize system performance, and ensure stable operation of equipment.
5. **DC-DC power converter**:
In DC-DC power converter applications, the low on-resistance of SI3493BDV-T1-GE3-VB ensures high efficiency of the converter, suitable for buck and boost power converters. These converters are widely used in various electronic devices, such as communication base stations, embedded systems, vehicle power supplies, solar panel systems, etc.
6. **Motor Control**:
This MOSFET is widely used in motor control systems, especially in low-power motor drive circuits. By acting as a switching element for the motor, it can achieve start-stop control and speed regulation of the motor. Its high efficiency characteristics make it widely used in home appliances, automation equipment and robots.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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