中文
English
SI3481DV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
**SI3481DV-T1-GE3-VB Product Introduction**
SI3481DV-T1-GE3-VB is a single P-type MOSFET in SOT23-6 package, designed for high-efficiency power management and load switching applications. The maximum drain-source voltage (V_DS) of this MOSFET is -30V, and the maximum gate-source voltage (V_GS) is ±20V, which can operate stably at higher negative voltages. Its on-resistance (R_DS(on)) is as low as 54mΩ (V_GS = 4.5V) and 49mΩ (V_GS = 10V), which effectively reduces switching losses and improves the overall efficiency of the system. SI3481DV-T1-GE3-VB has a maximum drain current (I_D) of -4.8A, which is suitable for a variety of applications such as load switching, power regulation and battery management. This MOSFET uses Trench technology, which provides excellent switching performance and can operate stably under high frequency and high load conditions.
SI3481DV-T1-GE3-VB is a single P-type MOSFET in SOT23-6 package, designed for high-efficiency power management and load switching applications. The maximum drain-source voltage (V_DS) of this MOSFET is -30V, and the maximum gate-source voltage (V_GS) is ±20V, which can operate stably at higher negative voltages. Its on-resistance (R_DS(on)) is as low as 54mΩ (V_GS = 4.5V) and 49mΩ (V_GS = 10V), which effectively reduces switching losses and improves the overall efficiency of the system. SI3481DV-T1-GE3-VB has a maximum drain current (I_D) of -4.8A, which is suitable for a variety of applications such as load switching, power regulation and battery management. This MOSFET uses Trench technology, which provides excellent switching performance and can operate stably under high frequency and high load conditions.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
**SI3481DV-T1-GE3-VB detailed parameter description**
- **Package:** SOT23-6
- **Configuration:** Single P-type MOSFET (Single-P-Channel)
- **V_DS (drain-source voltage):** -30V
- **V_GS (gate-source voltage):** ±20V
- **V_th (gate threshold voltage):** -1.7V
- **R_DS(ON) (on-resistance):**
- 54mΩ @ V_GS = 4.5V
- 49mΩ @ V_GS = 10V
- **I_D (maximum drain current):** -4.8A
- **Technology:** Trench (trench technology)
**Electrical characteristics:**
- **Low on-resistance:** The SI3481DV-T1-GE3-VB has an on-resistance of 54mΩ and 49mΩ at V_GS = 4.5V and V_GS = 10V respectively, which means that this MOSFET has low power consumption and high efficiency when operating under high load conditions, making it suitable for low-power applications.
- **High-efficiency switching:** Adopting Trench technology, it provides excellent switching performance, suitable for high-frequency switching operations, and reduces switching losses.
- **Current carrying capacity:** The maximum drain current is -4.8A, which is capable of handling higher current flow and is suitable for a variety of applications that require high current handling.
- **Negative voltage applications:** As a P-type MOSFET, this product performs well in power management systems that require negative voltage control, especially in situations where negative voltage sources or negative current flows.
- **Package:** SOT23-6
- **Configuration:** Single P-type MOSFET (Single-P-Channel)
- **V_DS (drain-source voltage):** -30V
- **V_GS (gate-source voltage):** ±20V
- **V_th (gate threshold voltage):** -1.7V
- **R_DS(ON) (on-resistance):**
- 54mΩ @ V_GS = 4.5V
- 49mΩ @ V_GS = 10V
- **I_D (maximum drain current):** -4.8A
- **Technology:** Trench (trench technology)
**Electrical characteristics:**
- **Low on-resistance:** The SI3481DV-T1-GE3-VB has an on-resistance of 54mΩ and 49mΩ at V_GS = 4.5V and V_GS = 10V respectively, which means that this MOSFET has low power consumption and high efficiency when operating under high load conditions, making it suitable for low-power applications.
- **High-efficiency switching:** Adopting Trench technology, it provides excellent switching performance, suitable for high-frequency switching operations, and reduces switching losses.
- **Current carrying capacity:** The maximum drain current is -4.8A, which is capable of handling higher current flow and is suitable for a variety of applications that require high current handling.
- **Negative voltage applications:** As a P-type MOSFET, this product performs well in power management systems that require negative voltage control, especially in situations where negative voltage sources or negative current flows.
Domain and module applications：
**Application fields and modules**
1. **Power management system:**
SI3481DV-T1-GE3-VB is an ideal power switch element, widely used in DC-DC converters, battery management systems and power regulation circuits. Its low on-resistance and efficient switching characteristics make it highly efficient in power management systems, especially in negative voltage operation occasions, which can improve power conversion efficiency and reduce heat. For example, in portable electronic devices, this MOSFET can be used as a switching element in battery chargers to optimize the battery charging process and ensure longer battery life.
2. **Load switch:**
SI3481DV-T1-GE3-VB is suitable for load switch applications due to its low on-resistance and excellent current handling capability. It can efficiently control the opening and closing of current and reduce power consumption. In smart home devices, automation systems and mobile electronic devices, MOSFETs can be used to control the power switch of devices. For example, in smart home control systems, SI3481DV-T1-GE3-VB can be used to control power switching of lighting systems, air conditioners and other home appliances, providing efficient energy management.
3. **Battery Management System (BMS): **
In battery management systems, SI3481DV-T1-GE3-VB can be used as a switching element for battery charging and discharging currents, and is particularly suitable for use in low voltage or negative voltage management systems. Its low on-resistance and high current capability enable it to maintain efficient operation during large current charging and discharging, ensuring that the battery is in a safe working state. Applied in electric vehicles (EVs) or portable battery devices, this MOSFET helps protect the battery from the risk of overcharging or over-discharging, extending battery life and improving energy efficiency.
4. **Automotive Electronics: **
In automotive electronic systems, SI3481DV-T1-GE3-VB is often used in battery management, power regulation and load switching systems. Especially in the battery management modules of electric vehicles (EV) and hybrid electric vehicles (HEV), this MOSFET can help optimize the battery charging and discharging process and ensure efficient energy transmission and management. Due to its high current capability and low on-resistance, it can effectively control the current flow of the battery and ensure that the system operates in an efficient and safe state.
5. **Communication equipment: **
In communication equipment, SI3481DV-T1-GE3-VB can be used for power switching, load switching and power regulation modules. The low on-resistance and efficient switching characteristics of MOSFET can ensure the stable operation of communication equipment under high-frequency operation, reduce energy loss and improve the reliability of communication systems. For example, in the power management module of the base station, this MOSFET can be used to control the switching of the power supply to ensure stable operation of the equipment and reduce power consumption.
6. **Consumer electronics: **
SI3481DV-T1-GE3-VB is also widely used in consumer electronics such as smartphones, tablets, and wearable devices. Due to its low power consumption and high efficiency, it is suitable for battery protection and power management in these devices. This MOSFET can be used to optimize the battery charging and discharging process of the device, extend the battery life, and ensure the stable operation of the device. For example, in a smartphone, MOSFET can control the battery charging process, prevent overcharging and overdischarging, and ensure the health of the battery.
1. **Power management system:**
SI3481DV-T1-GE3-VB is an ideal power switch element, widely used in DC-DC converters, battery management systems and power regulation circuits. Its low on-resistance and efficient switching characteristics make it highly efficient in power management systems, especially in negative voltage operation occasions, which can improve power conversion efficiency and reduce heat. For example, in portable electronic devices, this MOSFET can be used as a switching element in battery chargers to optimize the battery charging process and ensure longer battery life.
2. **Load switch:**
SI3481DV-T1-GE3-VB is suitable for load switch applications due to its low on-resistance and excellent current handling capability. It can efficiently control the opening and closing of current and reduce power consumption. In smart home devices, automation systems and mobile electronic devices, MOSFETs can be used to control the power switch of devices. For example, in smart home control systems, SI3481DV-T1-GE3-VB can be used to control power switching of lighting systems, air conditioners and other home appliances, providing efficient energy management.
3. **Battery Management System (BMS): **
In battery management systems, SI3481DV-T1-GE3-VB can be used as a switching element for battery charging and discharging currents, and is particularly suitable for use in low voltage or negative voltage management systems. Its low on-resistance and high current capability enable it to maintain efficient operation during large current charging and discharging, ensuring that the battery is in a safe working state. Applied in electric vehicles (EVs) or portable battery devices, this MOSFET helps protect the battery from the risk of overcharging or over-discharging, extending battery life and improving energy efficiency.
4. **Automotive Electronics: **
In automotive electronic systems, SI3481DV-T1-GE3-VB is often used in battery management, power regulation and load switching systems. Especially in the battery management modules of electric vehicles (EV) and hybrid electric vehicles (HEV), this MOSFET can help optimize the battery charging and discharging process and ensure efficient energy transmission and management. Due to its high current capability and low on-resistance, it can effectively control the current flow of the battery and ensure that the system operates in an efficient and safe state.
5. **Communication equipment: **
In communication equipment, SI3481DV-T1-GE3-VB can be used for power switching, load switching and power regulation modules. The low on-resistance and efficient switching characteristics of MOSFET can ensure the stable operation of communication equipment under high-frequency operation, reduce energy loss and improve the reliability of communication systems. For example, in the power management module of the base station, this MOSFET can be used to control the switching of the power supply to ensure stable operation of the equipment and reduce power consumption.
6. **Consumer electronics: **
SI3481DV-T1-GE3-VB is also widely used in consumer electronics such as smartphones, tablets, and wearable devices. Due to its low power consumption and high efficiency, it is suitable for battery protection and power management in these devices. This MOSFET can be used to optimize the battery charging and discharging process of the device, extend the battery life, and ensure the stable operation of the device. For example, in a smartphone, MOSFET can control the battery charging process, prevent overcharging and overdischarging, and ensure the health of the battery.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
