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SI3473DV-T1-GE3-VB Product details
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Product Introduction:
**SI3473DV-T1-GE3-VB** is a unipolar P-type MOSFET using Trench technology, packaged in SOT23-6. This product has excellent switching performance and low on-resistance, and is designed for high-efficiency, low-power applications. SI3473DV-T1-GE3-VB provides a maximum drain-source voltage of -30V and a maximum drain current of -4.8A, with a low on-resistance (RDS(ON) of 54mΩ at VGS = 4.5V and 49mΩ at VGS = 10V). This MOSFET is particularly suitable for applications such as battery management, load switching, power path control, and overvoltage/overcurrent protection. Its compact SOT23-6 package makes it ideal for portable devices, consumer electronics, and high-density power supply designs.
**SI3473DV-T1-GE3-VB** is a unipolar P-type MOSFET using Trench technology, packaged in SOT23-6. This product has excellent switching performance and low on-resistance, and is designed for high-efficiency, low-power applications. SI3473DV-T1-GE3-VB provides a maximum drain-source voltage of -30V and a maximum drain current of -4.8A, with a low on-resistance (RDS(ON) of 54mΩ at VGS = 4.5V and 49mΩ at VGS = 10V). This MOSFET is particularly suitable for applications such as battery management, load switching, power path control, and overvoltage/overcurrent protection. Its compact SOT23-6 package makes it ideal for portable devices, consumer electronics, and high-density power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
- **Package type**: SOT23-6
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
- **Package type**: SOT23-6
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
Domain and module applications：
Typical application areas and modules:
1. **Battery Management System (BMS)**:
SI3473DV-T1-GE3-VB can be widely used in battery management systems, especially in key links such as battery charge and discharge control, overcharge and over-discharge protection. Due to its low on-resistance and fast switching characteristics, this MOSFET can effectively improve the efficiency of the battery charge and discharge process and reduce the power consumption of the system. In battery-driven devices such as smartphones, wearable devices, and mobile power supplies, MOSFET can provide efficient power control and battery protection functions.
2. **Load Switch and Power Path Control**:
SI3473DV-T1-GE3-VB is suitable for load switching and power path management. As a power path switch, it can accurately control the flow of current for power transfer control from the battery or external power supply to the load. It is particularly suitable for various consumer electronic products, such as smart home devices, tablets, portable speakers, etc., to help achieve efficient power management, reduce power loss and extend the use time of the device.
3. **Overvoltage/overcurrent protection circuit**:
In power systems that require overvoltage protection and overcurrent protection, SI3473DV-T1-GE3-VB can quickly respond to voltage or current anomalies and cut off the power supply. It is widely used in power adapters, chargers, battery protection circuits, etc. to ensure that the system is not damaged when encountering excessive voltage or current. Through this type of protection, MOSFET improves the safety and reliability of the circuit and avoids damage to the device when overloaded.
4. **DC-DC converter**:
SI3473DV-T1-GE3-VB is very suitable for use in DC-DC converters due to its low on-resistance and excellent switching performance. This MOSFET can be used for efficient voltage conversion and battery power management, especially in applications such as portable devices, mobile power supplies and chargers, which can significantly improve power conversion efficiency, reduce energy loss, and improve the endurance of the device.
5. **Consumer Electronics and Embedded Systems**:
In consumer electronics and embedded systems, SI3473DV-T1-GE3-VB is an ideal power switch choice. This MOSFET performs well in low-power applications and is suitable for a variety of small devices such as wireless communication modules, smart sensors, Internet of Things (IoT) devices, etc. Its compact package, low on-resistance and high-efficiency performance enable it to meet the needs of high-density power systems and provide reliable power management solutions.
1. **Battery Management System (BMS)**:
SI3473DV-T1-GE3-VB can be widely used in battery management systems, especially in key links such as battery charge and discharge control, overcharge and over-discharge protection. Due to its low on-resistance and fast switching characteristics, this MOSFET can effectively improve the efficiency of the battery charge and discharge process and reduce the power consumption of the system. In battery-driven devices such as smartphones, wearable devices, and mobile power supplies, MOSFET can provide efficient power control and battery protection functions.
2. **Load Switch and Power Path Control**:
SI3473DV-T1-GE3-VB is suitable for load switching and power path management. As a power path switch, it can accurately control the flow of current for power transfer control from the battery or external power supply to the load. It is particularly suitable for various consumer electronic products, such as smart home devices, tablets, portable speakers, etc., to help achieve efficient power management, reduce power loss and extend the use time of the device.
3. **Overvoltage/overcurrent protection circuit**:
In power systems that require overvoltage protection and overcurrent protection, SI3473DV-T1-GE3-VB can quickly respond to voltage or current anomalies and cut off the power supply. It is widely used in power adapters, chargers, battery protection circuits, etc. to ensure that the system is not damaged when encountering excessive voltage or current. Through this type of protection, MOSFET improves the safety and reliability of the circuit and avoids damage to the device when overloaded.
4. **DC-DC converter**:
SI3473DV-T1-GE3-VB is very suitable for use in DC-DC converters due to its low on-resistance and excellent switching performance. This MOSFET can be used for efficient voltage conversion and battery power management, especially in applications such as portable devices, mobile power supplies and chargers, which can significantly improve power conversion efficiency, reduce energy loss, and improve the endurance of the device.
5. **Consumer Electronics and Embedded Systems**:
In consumer electronics and embedded systems, SI3473DV-T1-GE3-VB is an ideal power switch choice. This MOSFET performs well in low-power applications and is suitable for a variety of small devices such as wireless communication modules, smart sensors, Internet of Things (IoT) devices, etc. Its compact package, low on-resistance and high-efficiency performance enable it to meet the needs of high-density power systems and provide reliable power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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