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SI3473CDV-T1-GE3-VB Product details
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SI3473CDV-T1-GE3-VB MOSFET Product Introduction
SI3473CDV-T1-GE3-VB is a single P-channel MOSFET in SOT23-6 package, designed for low-power and medium-power applications. The maximum drain-source voltage V_DS of this MOSFET is -30V, and the maximum gate-source voltage V_GS is ±20V, which is suitable for various power management, electric drive and load switching applications. Its threshold voltage (V_th) is -1.7V, which can effectively control the switching of leakage current and ensure system stability.
The on-resistance (R_DS(ON)) is 54mΩ at V_GS = 4.5V and 49mΩ at V_GS = 10V. These low on-resistance characteristics effectively reduce power loss and improve switching efficiency. The maximum drain current (I_D) is -4.8A, making it suitable for medium current load applications, supporting battery-powered equipment, power tools, LED drivers, etc. SI3473CDV-T1-GE3-VB uses advanced Trench technology to provide higher efficiency and lower power consumption.
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SI3473CDV-T1-GE3-VB is a single P-channel MOSFET in SOT23-6 package, designed for low-power and medium-power applications. The maximum drain-source voltage V_DS of this MOSFET is -30V, and the maximum gate-source voltage V_GS is ±20V, which is suitable for various power management, electric drive and load switching applications. Its threshold voltage (V_th) is -1.7V, which can effectively control the switching of leakage current and ensure system stability.
The on-resistance (R_DS(ON)) is 54mΩ at V_GS = 4.5V and 49mΩ at V_GS = 10V. These low on-resistance characteristics effectively reduce power loss and improve switching efficiency. The maximum drain current (I_D) is -4.8A, making it suitable for medium current load applications, supporting battery-powered equipment, power tools, LED drivers, etc. SI3473CDV-T1-GE3-VB uses advanced Trench technology to provide higher efficiency and lower power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
SI3473CDV-T1-GE3-VB MOSFET Detailed parameter description
- **Model**: SI3473CDV-T1-GE3-VB
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- At V_GS = 4.5V, R_DS(ON) = 54mΩ
- At V_GS = 10V, R_DS(ON) = 49mΩ
- **Maximum drain current (I_D)**: -4.8A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package type**: SOT23-6
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- **Model**: SI3473CDV-T1-GE3-VB
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- At V_GS = 4.5V, R_DS(ON) = 54mΩ
- At V_GS = 10V, R_DS(ON) = 49mΩ
- **Maximum drain current (I_D)**: -4.8A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package type**: SOT23-6
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Domain and module applications：
SI3473CDV-T1-GE3-VB MOSFET Applications and Modules
1. **Power Management System**
SI3473CDV-T1-GE3-VB can be widely used in DC-DC converters and power regulator modules to help power systems achieve high-efficiency conversion in low-voltage and medium-power load scenarios. Its low R_DS(ON) and high switching efficiency help reduce power loss and improve power efficiency, making it suitable for power management of various electronic devices, such as portable devices, consumer electronics, and communication equipment.
2. **Load Switch Applications**
In load switch applications, SI3473CDV-T1-GE3-VB is suitable for battery protection, load isolation, and battery management systems. Its high current carrying capacity and low on-resistance enable it to efficiently control the direction of current flow, making it suitable for power management of smart home devices, portable electronic products, and automation control systems.
3. **Electric Drive System**
SI3473CDV-T1-GE3-VB performs well in electric drive applications such as power tools, electric toys, and electric bicycles. As a power switch, MOSFET controls the start, stop, and speed regulation of the motor through efficient conduction and switching performance. It is suitable for electric drive systems that require high efficiency and low energy loss, improving the overall efficiency and reliability of the system.
4. **LED Drive Circuit**
Due to its low power loss characteristics, SI3473CDV-T1-GE3-VB is suitable for LED drive circuits, especially for applications with high power efficiency requirements. The high efficiency of MOSFET can reduce heat generation and improve the performance and stability of LED lighting systems. It is especially suitable for residential and commercial lighting systems in energy-efficient LED lighting equipment.
5. **Automotive Electronic System**
In automotive electronic applications, SI3473CDV-T1-GE3-VB can be used for battery management, on-board power converters, and electric drive systems. Its low on-resistance and high current carrying capacity make it particularly suitable for efficient on-board power management, supporting the battery management system of electric vehicles (EV) and hybrid electric vehicles (HEV), ensuring efficient and stable operation of the system.
6. **Consumer Electronics**
In consumer electronics such as smartphones, tablets, and wearable devices, SI3473CDV-T1-GE3-VB can be used as a battery management and power control module. The low power loss and high efficiency of MOSFET help extend the battery life of the device while providing stable and reliable power management.
7. **Industrial Control Systems**
SI3473CDV-T1-GE3-VB can also be widely used in industrial control systems such as automation equipment, robots, and intelligent manufacturing equipment. The high current handling capability and fast switching capability of MOSFET in these fields can support precise control of the load and efficient energy management, and meet the needs of industrial applications for system stability and high efficiency.
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SI3473CDV-T1-GE3-VB MOSFET performs well in many fields, especially suitable for low to medium voltage power management, load switching, LED drive and electric drive systems. Its low power consumption, low on-resistance and high current handling capability make it an ideal switching element in modern electronic systems. It is widely used in consumer electronics, automotive electronics, industrial control and power management to help improve system efficiency and stability.
1. **Power Management System**
SI3473CDV-T1-GE3-VB can be widely used in DC-DC converters and power regulator modules to help power systems achieve high-efficiency conversion in low-voltage and medium-power load scenarios. Its low R_DS(ON) and high switching efficiency help reduce power loss and improve power efficiency, making it suitable for power management of various electronic devices, such as portable devices, consumer electronics, and communication equipment.
2. **Load Switch Applications**
In load switch applications, SI3473CDV-T1-GE3-VB is suitable for battery protection, load isolation, and battery management systems. Its high current carrying capacity and low on-resistance enable it to efficiently control the direction of current flow, making it suitable for power management of smart home devices, portable electronic products, and automation control systems.
3. **Electric Drive System**
SI3473CDV-T1-GE3-VB performs well in electric drive applications such as power tools, electric toys, and electric bicycles. As a power switch, MOSFET controls the start, stop, and speed regulation of the motor through efficient conduction and switching performance. It is suitable for electric drive systems that require high efficiency and low energy loss, improving the overall efficiency and reliability of the system.
4. **LED Drive Circuit**
Due to its low power loss characteristics, SI3473CDV-T1-GE3-VB is suitable for LED drive circuits, especially for applications with high power efficiency requirements. The high efficiency of MOSFET can reduce heat generation and improve the performance and stability of LED lighting systems. It is especially suitable for residential and commercial lighting systems in energy-efficient LED lighting equipment.
5. **Automotive Electronic System**
In automotive electronic applications, SI3473CDV-T1-GE3-VB can be used for battery management, on-board power converters, and electric drive systems. Its low on-resistance and high current carrying capacity make it particularly suitable for efficient on-board power management, supporting the battery management system of electric vehicles (EV) and hybrid electric vehicles (HEV), ensuring efficient and stable operation of the system.
6. **Consumer Electronics**
In consumer electronics such as smartphones, tablets, and wearable devices, SI3473CDV-T1-GE3-VB can be used as a battery management and power control module. The low power loss and high efficiency of MOSFET help extend the battery life of the device while providing stable and reliable power management.
7. **Industrial Control Systems**
SI3473CDV-T1-GE3-VB can also be widely used in industrial control systems such as automation equipment, robots, and intelligent manufacturing equipment. The high current handling capability and fast switching capability of MOSFET in these fields can support precise control of the load and efficient energy management, and meet the needs of industrial applications for system stability and high efficiency.
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SI3473CDV-T1-GE3-VB MOSFET performs well in many fields, especially suitable for low to medium voltage power management, load switching, LED drive and electric drive systems. Its low power consumption, low on-resistance and high current handling capability make it an ideal switching element in modern electronic systems. It is widely used in consumer electronics, automotive electronics, industrial control and power management to help improve system efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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