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SI3471DV-T1-GE3-VB Product details
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SI3471DV-T1-GE3-VB Product Introduction
**SI3471DV-T1-GE3-VB** is a single P-channel MOSFET in a **SOT23-6** package, designed for low-voltage and high-efficiency switching power supplies. The product has a maximum drain-source voltage of **-30V**, a maximum drain current of **-4.8A**, and a low on-resistance **(RDS(ON))**, which is **54mΩ** at **VGS=4.5V** and **49mΩ** at **VGS=10V**. It uses **Trench** technology, which can effectively increase switching speed and reduce power loss, and is suitable for circuits that require high efficiency and low power consumption. The gate-source turn-on voltage is **-1.7V**, which enables it to be turned on at a lower gate voltage to meet the needs of high-side switching and load control. This MOSFET is very suitable for a variety of application scenarios such as low-voltage power supplies, DC-DC converters, battery management systems (BMS), and load switch control.
**SI3471DV-T1-GE3-VB** is a single P-channel MOSFET in a **SOT23-6** package, designed for low-voltage and high-efficiency switching power supplies. The product has a maximum drain-source voltage of **-30V**, a maximum drain current of **-4.8A**, and a low on-resistance **(RDS(ON))**, which is **54mΩ** at **VGS=4.5V** and **49mΩ** at **VGS=10V**. It uses **Trench** technology, which can effectively increase switching speed and reduce power loss, and is suitable for circuits that require high efficiency and low power consumption. The gate-source turn-on voltage is **-1.7V**, which enables it to be turned on at a lower gate voltage to meet the needs of high-side switching and load control. This MOSFET is very suitable for a variety of application scenarios such as low-voltage power supplies, DC-DC converters, battery management systems (BMS), and load switch control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
SI3471DV-T1-GE3-VB Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source turn-on voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- **54mΩ** @ VGS = 4.5V
- **49mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
- **Package**: SOT23-6
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source turn-on voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- **54mΩ** @ VGS = 4.5V
- **49mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
Domain and module applications：
SI3471DV-T1-GE3-VB Applications and Modules
1. **Low-voltage power switch**: SI3471DV-T1-GE3-VB is particularly suitable for high-side switch applications in **low-voltage DC-DC converters** due to its low on-resistance and high current carrying capacity. It can reduce switching losses and improve efficiency, and is widely used in low-power devices, especially those applications with high energy efficiency requirements.
- **Example**: In **5V or 12V power modules**, MOSFET is used as a high-side switch control element to achieve efficient current switching and reduce energy loss. It is suitable for various portable devices, power adapters and mobile chargers.
2. **Battery Management System (BMS)**: This MOSFET can be widely used in battery management systems (BMS), especially in battery charging and discharging control. Due to its low on-resistance and high current capability, SI3471DV-T1-GE3-VB can effectively control the current flow of the battery, ensuring that the battery is within a safe operating range and avoiding overcurrent or overcharging.
- **Example**: In the battery management system of **power tools, electric vehicles and energy storage systems**, as a switching element, it can effectively control the charging and discharging process of the battery to ensure the life and safety of the battery.
3. **Load control and switching circuit**: As a P-channel MOSFET, SI3471DV-T1-GE3-VB is very suitable for load circuits that require high-side switch control. Its low **RDS(ON)** and high current carrying capacity enable it to efficiently control high-power loads, reducing power loss and heat generation in the circuit.
- **Example**: In **LED drive circuit**, MOSFET acts as a switching control element to regulate the current flowing through the LED to optimize its brightness and power efficiency.
4. **Motor drive circuit**: This MOSFET is suitable for motor drive systems, especially low-voltage motor drive applications. Through its efficient switching control characteristics, SI3471DV-T1-GE3-VB can significantly improve the energy efficiency of motor drive systems and reduce switching losses, which is suitable for the high-efficiency requirements of motor control systems.
- **Example**: In **small DC motor drive circuit**, it is used as high-side switch control to improve the operation efficiency of the motor through precise current control. It is widely used in home appliances, power tools, robots and other equipment.
5. **Inverter and power conversion module**: Due to its low **RDS(ON)** and high current capability, SI3471DV-T1-GE3-VB can also be used in inverters and power conversion modules, especially in low-voltage power conversion processes. It can efficiently control current flow and improve energy conversion efficiency, and is widely used in solar inverters, electric vehicle charging systems and other occasions.
- **Example**: In **solar inverter**, MOSFETs are used as switching elements to efficiently convert the DC power generated by solar panels into AC power for home or industrial use, while improving energy efficiency and reducing heat loss.
1. **Low-voltage power switch**: SI3471DV-T1-GE3-VB is particularly suitable for high-side switch applications in **low-voltage DC-DC converters** due to its low on-resistance and high current carrying capacity. It can reduce switching losses and improve efficiency, and is widely used in low-power devices, especially those applications with high energy efficiency requirements.
- **Example**: In **5V or 12V power modules**, MOSFET is used as a high-side switch control element to achieve efficient current switching and reduce energy loss. It is suitable for various portable devices, power adapters and mobile chargers.
2. **Battery Management System (BMS)**: This MOSFET can be widely used in battery management systems (BMS), especially in battery charging and discharging control. Due to its low on-resistance and high current capability, SI3471DV-T1-GE3-VB can effectively control the current flow of the battery, ensuring that the battery is within a safe operating range and avoiding overcurrent or overcharging.
- **Example**: In the battery management system of **power tools, electric vehicles and energy storage systems**, as a switching element, it can effectively control the charging and discharging process of the battery to ensure the life and safety of the battery.
3. **Load control and switching circuit**: As a P-channel MOSFET, SI3471DV-T1-GE3-VB is very suitable for load circuits that require high-side switch control. Its low **RDS(ON)** and high current carrying capacity enable it to efficiently control high-power loads, reducing power loss and heat generation in the circuit.
- **Example**: In **LED drive circuit**, MOSFET acts as a switching control element to regulate the current flowing through the LED to optimize its brightness and power efficiency.
4. **Motor drive circuit**: This MOSFET is suitable for motor drive systems, especially low-voltage motor drive applications. Through its efficient switching control characteristics, SI3471DV-T1-GE3-VB can significantly improve the energy efficiency of motor drive systems and reduce switching losses, which is suitable for the high-efficiency requirements of motor control systems.
- **Example**: In **small DC motor drive circuit**, it is used as high-side switch control to improve the operation efficiency of the motor through precise current control. It is widely used in home appliances, power tools, robots and other equipment.
5. **Inverter and power conversion module**: Due to its low **RDS(ON)** and high current capability, SI3471DV-T1-GE3-VB can also be used in inverters and power conversion modules, especially in low-voltage power conversion processes. It can efficiently control current flow and improve energy conversion efficiency, and is widely used in solar inverters, electric vehicle charging systems and other occasions.
- **Example**: In **solar inverter**, MOSFETs are used as switching elements to efficiently convert the DC power generated by solar panels into AC power for home or industrial use, while improving energy efficiency and reducing heat loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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