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SI3469DV-T1-GE3-VB Product details
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Product Introduction:
SI3469DV-T1-GE3 is a single P-channel MOSFET launched by Vishay. It adopts SOT23-6 package and is suitable for medium and low voltage circuits. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and it can withstand a leakage current (ID) of up to -4.8A. It adopts advanced Trench technology and has a low on-resistance (RDS(ON) = 54mΩ@VGS=4.5V, 49mΩ@VGS=10V), thus providing low power consumption and high efficiency working performance. The threshold voltage (Vth) of SI3469DV-T1-GE3 is -1.7V, which is suitable for low voltage drive applications. It is widely used in load switching, power management, battery protection and reverse voltage protection. It is particularly suitable for application scenarios requiring high efficiency and low loss.
SI3469DV-T1-GE3 is a single P-channel MOSFET launched by Vishay. It adopts SOT23-6 package and is suitable for medium and low voltage circuits. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and it can withstand a leakage current (ID) of up to -4.8A. It adopts advanced Trench technology and has a low on-resistance (RDS(ON) = 54mΩ@VGS=4.5V, 49mΩ@VGS=10V), thus providing low power consumption and high efficiency working performance. The threshold voltage (Vth) of SI3469DV-T1-GE3 is -1.7V, which is suitable for low voltage drive applications. It is widely used in load switching, power management, battery protection and reverse voltage protection. It is particularly suitable for application scenarios requiring high efficiency and low loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
- **Model**: SI3469DV-T1-GE3
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Applications**: load switch, reverse voltage protection, battery protection circuit, power management, etc.
- **Model**: SI3469DV-T1-GE3
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Applications**: load switch, reverse voltage protection, battery protection circuit, power management, etc.
Domain and module applications：
Application fields and module examples:
1. **Load switch application**:
SI3469DV-T1-GE3 MOSFET is ideal for low voltage load switching. Its low on-resistance makes it an ideal choice for controlling low power devices and is widely used in smart home devices, Internet of Things (IoT) devices, sensors and portable battery-driven systems. In these applications, the low RDS(ON) value of the MOSFET effectively reduces energy loss and improves system efficiency, especially in frequent load switching operations.
2. **Battery protection circuit**:
In the battery management system (BMS), SI3469DV-T1-GE3 can provide effective protection for lithium batteries and other rechargeable batteries. The MOSFET can prevent the occurrence of battery overcharge, over discharge and short circuit. The low RDS(ON) characteristics of the MOSFET can ensure efficient energy transfer during battery charging and discharging, extend battery life and ensure battery safety.
3. **Reverse Voltage Protection**:
This MOSFET is suitable for various reverse voltage protection applications, especially in devices that are sensitive to the polarity of the power connection. The MOSFET can automatically cut off the current in the event of a reverse power supply voltage to prevent damage to the device. It is widely used in solar panels, mobile power supplies, automotive electronic devices, and any application scenario where the circuit needs to be protected from reverse voltage surges.
4. **Power Management**:
SI3469DV-T1-GE3 is widely used in power management modules, especially in DC-DC converters, low-voltage power adapters, and embedded systems. As a switching element, it can achieve efficient power conversion and reduce the power consumption of the system. With low on-resistance, it can reduce the energy loss generated during the current flow and improve the overall efficiency of the power management system.
5. **High-efficiency Power Conversion**:
The low on-resistance and high current carrying capacity of this MOSFET make it ideal for power conversion applications. It can be used in efficient DC-DC converters, battery management systems (BMS), and other power conversion circuits. Its high efficiency makes it particularly suitable for use in power control parts of portable devices, consumer electronics and power electronic modules.
6. **Automotive Electronics**:
In automotive electronic systems, SI3469DV-T1-GE3 can be used in battery management systems, battery protection and power conversion modules. The MOSFET can provide reliable performance in harsh working environments, ensuring that automotive electronic equipment can operate stably even in extreme temperatures (-55°C to +150°C). For example, in the battery management system of an electric vehicle, the MOSFET is responsible for controlling the current during battery charging and discharging, and preventing faults such as overcurrent and short circuit.
7. **Wireless Communication and Smart Hardware**:
Due to its low power consumption characteristics, SI3469DV-T1-GE3 is also widely used in wireless communication modules, Bluetooth modules and other smart hardware. MOSFET is used for battery protection, power switching and low-voltage load control, which can provide efficient power management, extend the working time of the equipment, and improve the stability and safety of the equipment.
1. **Load switch application**:
SI3469DV-T1-GE3 MOSFET is ideal for low voltage load switching. Its low on-resistance makes it an ideal choice for controlling low power devices and is widely used in smart home devices, Internet of Things (IoT) devices, sensors and portable battery-driven systems. In these applications, the low RDS(ON) value of the MOSFET effectively reduces energy loss and improves system efficiency, especially in frequent load switching operations.
2. **Battery protection circuit**:
In the battery management system (BMS), SI3469DV-T1-GE3 can provide effective protection for lithium batteries and other rechargeable batteries. The MOSFET can prevent the occurrence of battery overcharge, over discharge and short circuit. The low RDS(ON) characteristics of the MOSFET can ensure efficient energy transfer during battery charging and discharging, extend battery life and ensure battery safety.
3. **Reverse Voltage Protection**:
This MOSFET is suitable for various reverse voltage protection applications, especially in devices that are sensitive to the polarity of the power connection. The MOSFET can automatically cut off the current in the event of a reverse power supply voltage to prevent damage to the device. It is widely used in solar panels, mobile power supplies, automotive electronic devices, and any application scenario where the circuit needs to be protected from reverse voltage surges.
4. **Power Management**:
SI3469DV-T1-GE3 is widely used in power management modules, especially in DC-DC converters, low-voltage power adapters, and embedded systems. As a switching element, it can achieve efficient power conversion and reduce the power consumption of the system. With low on-resistance, it can reduce the energy loss generated during the current flow and improve the overall efficiency of the power management system.
5. **High-efficiency Power Conversion**:
The low on-resistance and high current carrying capacity of this MOSFET make it ideal for power conversion applications. It can be used in efficient DC-DC converters, battery management systems (BMS), and other power conversion circuits. Its high efficiency makes it particularly suitable for use in power control parts of portable devices, consumer electronics and power electronic modules.
6. **Automotive Electronics**:
In automotive electronic systems, SI3469DV-T1-GE3 can be used in battery management systems, battery protection and power conversion modules. The MOSFET can provide reliable performance in harsh working environments, ensuring that automotive electronic equipment can operate stably even in extreme temperatures (-55°C to +150°C). For example, in the battery management system of an electric vehicle, the MOSFET is responsible for controlling the current during battery charging and discharging, and preventing faults such as overcurrent and short circuit.
7. **Wireless Communication and Smart Hardware**:
Due to its low power consumption characteristics, SI3469DV-T1-GE3 is also widely used in wireless communication modules, Bluetooth modules and other smart hardware. MOSFET is used for battery protection, power switching and low-voltage load control, which can provide efficient power management, extend the working time of the equipment, and improve the stability and safety of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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