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SI3469DV-T1-E3-VB Product details
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Product Introduction:
SI3469DV-T1-E3 is a single P-channel MOSFET launched by Vishay, which adopts SOT23-6 package and is suitable for medium and low voltage circuits. This MOSFET has a maximum drain-source voltage (VDS) of -30V, a maximum drain current (ID) of -4.8A, and uses Trench technology to provide low on-resistance (RDS(ON) is 54mΩ@VGS=4.5V and 49mΩ@VGS=10V). SI3469DV-T1-E3 has low switching loss and high efficiency, and is widely used in low-power systems such as battery management, power management, load switching and reverse voltage protection. Its threshold voltage (Vth) is -1.7V, which is suitable for low-voltage drive design, especially for high-efficiency and low-loss applications.
SI3469DV-T1-E3 is a single P-channel MOSFET launched by Vishay, which adopts SOT23-6 package and is suitable for medium and low voltage circuits. This MOSFET has a maximum drain-source voltage (VDS) of -30V, a maximum drain current (ID) of -4.8A, and uses Trench technology to provide low on-resistance (RDS(ON) is 54mΩ@VGS=4.5V and 49mΩ@VGS=10V). SI3469DV-T1-E3 has low switching loss and high efficiency, and is widely used in low-power systems such as battery management, power management, load switching and reverse voltage protection. Its threshold voltage (Vth) is -1.7V, which is suitable for low-voltage drive design, especially for high-efficiency and low-loss applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
- **Model**: SI3469DV-T1-E3
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Applications**: load switch, reverse voltage protection, battery protection circuit, power management, etc.
- **Model**: SI3469DV-T1-E3
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Applications**: load switch, reverse voltage protection, battery protection circuit, power management, etc.
Domain and module applications：
Application fields and module examples:
1. **Load switch application**:
SI3469DV-T1-E3 MOSFET is particularly suitable for low-voltage load switch applications. It can efficiently control load switches in low-voltage circuits and is widely used in portable devices, Internet of Things (IoT) devices and smart sensors. Its low on-resistance reduces energy loss and ensures efficient power management, which is particularly suitable for occasions where frequent load switching is required.
2. **Battery protection circuit**:
In the battery management system (BMS), SI3469DV-T1-E3 MOSFET can provide necessary protection for rechargeable batteries such as lithium batteries. Its low on-resistance ensures efficient energy transfer during battery charging and discharging, while also preventing potential dangers such as overcharging, over-discharging and short circuits. It is suitable for battery protection in devices such as power tools, electric bicycles and portable power supplies.
3. **Reverse voltage protection**:
SI3469DV-T1-E3 is very suitable as a reverse voltage protection component. In battery packs, automotive electronics, solar panels and other devices, MOSFETs can automatically cut off current when the power supply is reversed, thereby preventing circuit damage. Its low on-resistance ensures efficiency and reliability during protection and prevents energy waste.
4. **Power Management**:
As a switching element in the power management system, SI3469DV-T1-E3 can effectively regulate the conversion between power input and output, especially in DC-DC converters, battery chargers and low-voltage power adapters. Its efficient working performance helps reduce the total power consumption of the power management system and improves the overall performance and stability of the equipment.
5. **High-efficiency power conversion**:
In DC-DC converters and power supply systems, SI3469DV-T1-E3 MOSFET is widely used in efficient power conversion circuits. Its low RDS(ON) value can significantly reduce conduction losses, thereby improving system efficiency and reducing heat generation, and is suitable for power systems that require high energy efficiency, such as computer power supplies, LED driver power supplies and power electronic equipment.
6. **Automotive Electronics**:
SI3469DV-T1-E3 is suitable for applications such as automotive battery management systems, automotive power control and sensors. Its high voltage withstand capability (-30V) and low on-resistance enable it to perform well in harsh environments, ensuring safe charging and discharging operations of the battery and avoiding battery damage. Especially in electric vehicles (EV) and hybrid electric vehicles (HEV), MOSFETs can be used in battery protection circuits and power switching modules.
7. **Smart Home and Wearable Devices**:
In smart home devices and wearable devices, SI3469DV-T1-E3 MOSFET can be used as a load switch and power management component to provide reliable battery protection and low-power operation. It helps to extend battery life while reducing the overall power consumption of the device, and is suitable for scenarios that require battery management and intelligent power control, such as smart watches, smart headphones and home automation products.
1. **Load switch application**:
SI3469DV-T1-E3 MOSFET is particularly suitable for low-voltage load switch applications. It can efficiently control load switches in low-voltage circuits and is widely used in portable devices, Internet of Things (IoT) devices and smart sensors. Its low on-resistance reduces energy loss and ensures efficient power management, which is particularly suitable for occasions where frequent load switching is required.
2. **Battery protection circuit**:
In the battery management system (BMS), SI3469DV-T1-E3 MOSFET can provide necessary protection for rechargeable batteries such as lithium batteries. Its low on-resistance ensures efficient energy transfer during battery charging and discharging, while also preventing potential dangers such as overcharging, over-discharging and short circuits. It is suitable for battery protection in devices such as power tools, electric bicycles and portable power supplies.
3. **Reverse voltage protection**:
SI3469DV-T1-E3 is very suitable as a reverse voltage protection component. In battery packs, automotive electronics, solar panels and other devices, MOSFETs can automatically cut off current when the power supply is reversed, thereby preventing circuit damage. Its low on-resistance ensures efficiency and reliability during protection and prevents energy waste.
4. **Power Management**:
As a switching element in the power management system, SI3469DV-T1-E3 can effectively regulate the conversion between power input and output, especially in DC-DC converters, battery chargers and low-voltage power adapters. Its efficient working performance helps reduce the total power consumption of the power management system and improves the overall performance and stability of the equipment.
5. **High-efficiency power conversion**:
In DC-DC converters and power supply systems, SI3469DV-T1-E3 MOSFET is widely used in efficient power conversion circuits. Its low RDS(ON) value can significantly reduce conduction losses, thereby improving system efficiency and reducing heat generation, and is suitable for power systems that require high energy efficiency, such as computer power supplies, LED driver power supplies and power electronic equipment.
6. **Automotive Electronics**:
SI3469DV-T1-E3 is suitable for applications such as automotive battery management systems, automotive power control and sensors. Its high voltage withstand capability (-30V) and low on-resistance enable it to perform well in harsh environments, ensuring safe charging and discharging operations of the battery and avoiding battery damage. Especially in electric vehicles (EV) and hybrid electric vehicles (HEV), MOSFETs can be used in battery protection circuits and power switching modules.
7. **Smart Home and Wearable Devices**:
In smart home devices and wearable devices, SI3469DV-T1-E3 MOSFET can be used as a load switch and power management component to provide reliable battery protection and low-power operation. It helps to extend battery life while reducing the overall power consumption of the device, and is suitable for scenarios that require battery management and intelligent power control, such as smart watches, smart headphones and home automation products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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