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SI3467DV-T1-GE3-VB Product details
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SI3467DV-T1-GE3-VB MOSFET Product Introduction
SI3467DV-T1-GE3-VB is a high-efficiency unipolar P-channel MOSFET launched by **Vishay**, using **SOT23-6** small package. This MOSFET adopts **Trench** technology and is suitable for low-voltage, high-efficiency power management, battery management and load switching applications. Its drain-source voltage (V_DS) is rated at -30V, the gate-source voltage (V_GS) is ±20V, and the gate threshold voltage (V_th) is -1.7V. It has a low on-resistance (R_DS(ON)), which is 54mΩ (at V_GS=4.5V) and 49mΩ (at V_GS=10V), which can significantly reduce power loss and improve the overall efficiency of the system. The maximum drain current (I_D) is -4.8A, which is suitable for a variety of low-power, high-efficiency power and control system applications.
SI3467DV-T1-GE3-VB is a high-efficiency unipolar P-channel MOSFET launched by **Vishay**, using **SOT23-6** small package. This MOSFET adopts **Trench** technology and is suitable for low-voltage, high-efficiency power management, battery management and load switching applications. Its drain-source voltage (V_DS) is rated at -30V, the gate-source voltage (V_GS) is ±20V, and the gate threshold voltage (V_th) is -1.7V. It has a low on-resistance (R_DS(ON)), which is 54mΩ (at V_GS=4.5V) and 49mΩ (at V_GS=10V), which can significantly reduce power loss and improve the overall efficiency of the system. The maximum drain current (I_D) is -4.8A, which is suitable for a variety of low-power, high-efficiency power and control system applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
SI3467DV-T1-GE3-VB MOSFET Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Unipolar P-channel MOSFET
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 54mΩ (at V_GS=4.5V)
- 49mΩ (at V_GS=10V)
- **Maximum leakage current (I_D)**: -4.8A
- **Technology**: Trench
- **Typical applications**: Low voltage power switch, battery management, motor control and other fields.
- **Package**: SOT23-6
- **Configuration**: Unipolar P-channel MOSFET
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 54mΩ (at V_GS=4.5V)
- 49mΩ (at V_GS=10V)
- **Maximum leakage current (I_D)**: -4.8A
- **Technology**: Trench
- **Typical applications**: Low voltage power switch, battery management, motor control and other fields.
Domain and module applications：
Application fields and module examples
1. **Power management and power switch**:
SI3467DV-T1-GE3-VB can be used in power management systems, especially in portable devices, battery-driven devices, and power conversion modules. Its low on-resistance significantly improves the power conversion efficiency, and is particularly suitable for mobile electronic devices that require high performance and low power consumption, such as smartphones, tablets, and wearable devices.
2. **Battery management and protection system**:
In the battery management system (BMS), SI3467DV-T1-GE3-VB can be used as a key component of the battery charge and discharge control switch and overcharge/over-discharge protection circuit. It can ensure that the battery operates within a safe range and is suitable for battery protection systems of power tools, electric vehicles, and other battery-driven devices.
3. **Load switch and intelligent load control**:
This MOSFET is very suitable for load switches in low-voltage applications. It can effectively switch current and is suitable for devices such as LED drivers, motor start control, and sensor interfaces. Its low on-resistance effectively reduces power loss and heat generation, making the equipment more energy-efficient and efficient.
4. **DC-DC Converter and Power Conversion System**:
In DC-DC converter applications (such as boost and buck converters), the low R_DS(ON) of SI3467DV-T1-GE3-VB enables it to have lower conduction losses, thereby improving the efficiency of the entire conversion system. It is suitable for communication base stations, battery-powered systems, embedded systems, smart home devices and other fields that require efficient power conversion.
5. **Motor Drive and Control System**:
In motor drive circuits, especially in the control system of small-power motors, SI3467DV-T1-GE3-VB can be used as a switch control element for the motor to control the start and stop and speed adjustment of the motor. Due to its low on-resistance, it can work in efficient motor drive systems and is widely used in home appliances, robots and automation equipment.
6. **Intelligent control and automation system**:
In automation control systems and intelligent systems, SI3467DV-T1-GE3-VB can be used as an efficient power switch for load control, current switching and other occasions. It can help to achieve fast switching between different control modules and is suitable for various types of industrial automation, electrical switch systems and robot control circuits.
1. **Power management and power switch**:
SI3467DV-T1-GE3-VB can be used in power management systems, especially in portable devices, battery-driven devices, and power conversion modules. Its low on-resistance significantly improves the power conversion efficiency, and is particularly suitable for mobile electronic devices that require high performance and low power consumption, such as smartphones, tablets, and wearable devices.
2. **Battery management and protection system**:
In the battery management system (BMS), SI3467DV-T1-GE3-VB can be used as a key component of the battery charge and discharge control switch and overcharge/over-discharge protection circuit. It can ensure that the battery operates within a safe range and is suitable for battery protection systems of power tools, electric vehicles, and other battery-driven devices.
3. **Load switch and intelligent load control**:
This MOSFET is very suitable for load switches in low-voltage applications. It can effectively switch current and is suitable for devices such as LED drivers, motor start control, and sensor interfaces. Its low on-resistance effectively reduces power loss and heat generation, making the equipment more energy-efficient and efficient.
4. **DC-DC Converter and Power Conversion System**:
In DC-DC converter applications (such as boost and buck converters), the low R_DS(ON) of SI3467DV-T1-GE3-VB enables it to have lower conduction losses, thereby improving the efficiency of the entire conversion system. It is suitable for communication base stations, battery-powered systems, embedded systems, smart home devices and other fields that require efficient power conversion.
5. **Motor Drive and Control System**:
In motor drive circuits, especially in the control system of small-power motors, SI3467DV-T1-GE3-VB can be used as a switch control element for the motor to control the start and stop and speed adjustment of the motor. Due to its low on-resistance, it can work in efficient motor drive systems and is widely used in home appliances, robots and automation equipment.
6. **Intelligent control and automation system**:
In automation control systems and intelligent systems, SI3467DV-T1-GE3-VB can be used as an efficient power switch for load control, current switching and other occasions. It can help to achieve fast switching between different control modules and is suitable for various types of industrial automation, electrical switch systems and robot control circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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