SI3457DV-T1-GE3-VB Product details
Product introduction:
SI3457DV-T1-GE3 is a single P-type MOSFET in SOT23-6 package, designed with Trench technology, optimized for low voltage, high current and high efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and the maximum drain current (ID) is -4.8A, which is suitable for a variety of high-efficiency circuits such as battery management, power switches, and load switches. At 4.5V and 10V gate drive voltages, the on-resistance (RDS(ON)) is 54mΩ and 49mΩ respectively, which can effectively reduce power loss and thus improve the overall efficiency of the system. SI3457DV-T1-GE3 is suitable for applications that require efficient power conversion and low power loss, such as consumer electronics, LED drivers, battery management systems, smart homes, etc., and can optimize device performance and extend service life.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Model**: SI3457DV-T1-GE3
- **Package type**: SOT23-6
- **Configuration**: Single P-type MOSFET
- **Drain-source voltage (VDS)**: -30V (max)
- **Gate-source voltage (VGS)**: ±20V (max)
- **Throughput voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
- **Number of pins**: 6 Pin
Domain and module applications:
# 1. Power management system:
SI3457DV-T1-GE3 is an ideal choice for power management systems, especially for circuits such as DC-DC converters, voltage regulators, power switches and load switches. Its low on-resistance and high current carrying capacity enable it to efficiently process power, reduce energy losses, and provide efficient power management in a compact space. In portable devices, consumer electronics and battery-powered applications, it can optimize battery life and device performance.
# 6. Power tools and smart home:
In power tools and smart home applications, SI3457DV-T1-GE3 can be used as a key component in circuits such as battery management, power regulation, and load switching. It can support high current flow to ensure efficient operation of the system, and optimize battery management to extend the use time of the device. In power tools, electric vehicles and smart home appliances, it can effectively improve energy efficiency and reduce heat to ensure long-term stable operation of the system.
# 7. Automotive electronics and intelligent transportation:
SI3457DV-T1-GE3 is also widely used in automotive electronic equipment and intelligent transportation systems. Its high current carrying capacity and high-efficiency switching characteristics can effectively support the battery management, drive circuit and power control of electric vehicles, electric bicycles and other intelligent transportation tools, ensuring stable, safe and efficient operation of the equipment. In the automotive charging system and the on-board battery management system, it can provide efficient power conversion and optimize system performance.
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