Featured Model

Last updated:

SI3457DV-T1-E3-VB Product details

Product introduction:

1. Product Introduction: SI3457DV-T1-E3

SI3457DV-T1-E3 is a single P-type MOSFET in SOT23-6 package, designed with Trench technology, with low on-resistance and excellent current handling capability. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and the maximum drain current (ID) is -4.8A. It is suitable for applications that require efficient switching and low power consumption, such as power management, load switching, and battery protection. At 4.5V and 10V gate drive voltages, the on-resistance (RDS(ON)) is 54mΩ and 49mΩ, respectively, which can minimize power loss and improve system efficiency. SI3457DV-T1-E3 is suitable for battery-powered portable devices, LED drive circuits, DC-DC converters, consumer electronics and other fields, with superior performance and a wide range of application scenarios.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Single-P -30V -1.7V -4.8A 49mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Single-P
2. Detailed parameter description:

- **Model**: SI3457DV-T1-E3
- **Package type**: SOT23-6
- **Configuration**: Single P-type MOSFET
- **Drain to source voltage (VDS)**: -30V (max)
- **Gate to source voltage (VGS)**: ±20V (max)
- **Throw voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
- **Number of pins**: 6 Pin

Domain and module applications:

3. Application fields and module examples:

# 1. Power management system:
SI3457DV-T1-E3 is suitable for efficient power management systems, especially for modules such as DC-DC converters, voltage regulators and power switches. Due to its low on-resistance, it can effectively reduce power loss and provide support in efficient energy conversion and power management. In the power management of portable devices, battery-powered systems and wearable devices, SI3457DV-T1-E3 can optimize battery efficiency and extend the working time of the device.
# 6. Power tools:
In power tools, SI3457DV-T1-E3 can be used in battery management systems, motor drives and power regulation circuits. Its high current carrying capacity and low on-resistance characteristics enable it to effectively control the power transmission of power tools, reduce energy losses and improve the power efficiency of the system. In these high-power devices, it can also ensure the stability of the system in long-term use, reduce the risk of overheating, and extend the service life of the equipment.

# 7. Smart home devices:
In smart home systems, SI3457DV-T1-E3 can be used as power switch, battery management, load control and other modules, and is particularly suitable for use in smart sockets, smart lamps, smart appliances and other home devices. It can effectively control the power switch of the device, optimize energy consumption, while maintaining the efficiency of the system, and meet the smart home's needs for energy saving, environmental protection and comfort.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat