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SI3455DV-T1-E3-VB Product details
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Product Introduction:
**SI3455DV-T1-E3-VB** is a unipolar P-type MOSFET using Trench technology, packaged in SOT23-6 type, designed for low voltage, high efficiency and small size. This MOSFET provides a maximum drain-source voltage of -30V and a maximum drain current of -4.8A, with low on-resistance and fast switching characteristics, making it ideal for power management, load switching, battery protection, and other low-power applications. With its excellent electrical characteristics and compact packaging, SI3455DV-T1-E3-VB is widely used in consumer electronics, portable devices, and communication equipment, providing an ideal solution for efficient power management and power control.
**SI3455DV-T1-E3-VB** is a unipolar P-type MOSFET using Trench technology, packaged in SOT23-6 type, designed for low voltage, high efficiency and small size. This MOSFET provides a maximum drain-source voltage of -30V and a maximum drain current of -4.8A, with low on-resistance and fast switching characteristics, making it ideal for power management, load switching, battery protection, and other low-power applications. With its excellent electrical characteristics and compact packaging, SI3455DV-T1-E3-VB is widely used in consumer electronics, portable devices, and communication equipment, providing an ideal solution for efficient power management and power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
- **Package type**: SOT23-6
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
- **Package type**: SOT23-6
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
Domain and module applications：
Typical application areas and modules:
1. **Battery Management System (BMS)**:
SI3455DV-T1-E3-VB can be used for current switching, overcurrent protection and battery charge and discharge control in battery management systems. Its low on-resistance characteristics help reduce power loss during battery charging and discharging, and improve battery efficiency and service life. In applications such as smartphones, wearable devices, and mobile power supplies, MOSFET is an important component of battery management to ensure battery safety and high efficiency.
2. **Load Switch and Power Path Control**:
In load switch applications, SI3455DV-T1-E3-VB provides efficient power path control capabilities. It can accurately control the on and off of the power supply and is widely used in power management in various portable devices and embedded systems. Its small package and low on-resistance can effectively reduce power consumption and improve power efficiency, and is suitable for smart home devices, battery-powered devices, and other small electronic products.
3. **Overvoltage/Overcurrent Protection Circuit**:
SI3455DV-T1-E3-VB can be used in overvoltage or overcurrent protection circuits to provide safety protection. In systems such as power adapters, chargers, and battery protection modules, MOSFETs can quickly cut off power when current or voltage is too high to prevent damage to circuit components. This protection feature is especially important in high-voltage batteries and sensitive electronic devices, ensuring long-term stable operation of the device.
4. **DC-DC Converter**:
Due to its low on-resistance and efficient switching characteristics, SI3455DV-T1-E3-VB is suitable for use in DC-DC converters, especially in applications where high-efficiency power conversion and miniaturization are required. This MOSFET can be used in low-power applications such as mobile power supplies, battery-driven devices, chargers, etc., to improve power conversion efficiency, reduce energy loss, and extend device battery life.
5. **Communication Equipment and Embedded Systems**:
In communication equipment and embedded systems, SI3455DV-T1-E3-VB can be used as a switching element for power management and signal path control. Due to its small size and high efficiency, this MOSFET is widely used in various portable devices and low-power communication systems, such as wireless transmission modules, Bluetooth devices and embedded microcontroller applications. The fast switching characteristics provided by MOSFET enable it to meet high-frequency signal control and low power consumption requirements.
1. **Battery Management System (BMS)**:
SI3455DV-T1-E3-VB can be used for current switching, overcurrent protection and battery charge and discharge control in battery management systems. Its low on-resistance characteristics help reduce power loss during battery charging and discharging, and improve battery efficiency and service life. In applications such as smartphones, wearable devices, and mobile power supplies, MOSFET is an important component of battery management to ensure battery safety and high efficiency.
2. **Load Switch and Power Path Control**:
In load switch applications, SI3455DV-T1-E3-VB provides efficient power path control capabilities. It can accurately control the on and off of the power supply and is widely used in power management in various portable devices and embedded systems. Its small package and low on-resistance can effectively reduce power consumption and improve power efficiency, and is suitable for smart home devices, battery-powered devices, and other small electronic products.
3. **Overvoltage/Overcurrent Protection Circuit**:
SI3455DV-T1-E3-VB can be used in overvoltage or overcurrent protection circuits to provide safety protection. In systems such as power adapters, chargers, and battery protection modules, MOSFETs can quickly cut off power when current or voltage is too high to prevent damage to circuit components. This protection feature is especially important in high-voltage batteries and sensitive electronic devices, ensuring long-term stable operation of the device.
4. **DC-DC Converter**:
Due to its low on-resistance and efficient switching characteristics, SI3455DV-T1-E3-VB is suitable for use in DC-DC converters, especially in applications where high-efficiency power conversion and miniaturization are required. This MOSFET can be used in low-power applications such as mobile power supplies, battery-driven devices, chargers, etc., to improve power conversion efficiency, reduce energy loss, and extend device battery life.
5. **Communication Equipment and Embedded Systems**:
In communication equipment and embedded systems, SI3455DV-T1-E3-VB can be used as a switching element for power management and signal path control. Due to its small size and high efficiency, this MOSFET is widely used in various portable devices and low-power communication systems, such as wireless transmission modules, Bluetooth devices and embedded microcontroller applications. The fast switching characteristics provided by MOSFET enable it to meet high-frequency signal control and low power consumption requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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