SI3455ADV-T1-GE3-VB Product details
Product introduction:
SI3455ADV-T1-GE3-VB is a single P-channel MOSFET in SOT23-6 package, designed for high-efficiency power switching applications. The MOSFET has a maximum drain-source voltage V_DS of -30V and a gate-source voltage V_GS of ±20V. Its threshold voltage (V_th) is -1.7V, and the on-resistance (R_DS(ON)) is 54mΩ at V_GS = 4.5V and 49mΩ at V_GS = 10V, showing low conduction loss and high-efficiency switching characteristics. The maximum drain current (I_D) is -4.8A, supporting medium power loads and higher current applications.
Using Trench technology, SI3455ADV-T1-GE3-VB provides excellent switching performance and thermal stability, and is suitable for various medium and low voltage power switches, power management, load switches, and battery drive systems. The low on-resistance and high efficiency characteristics of this MOSFET help reduce energy loss in the system, and are particularly suitable for scenarios with high requirements for power conversion efficiency and system stability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Model**: SI3455ADV-T1-GE3-VB
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- At V_GS = 4.5V, R_DS(ON) = 54mΩ
- At V_GS = 10V, R_DS(ON) = 49mΩ
- **Maximum drain current (I_D)**: -4.8A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package type**: SOT23-6
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Domain and module applications:
1. **Power Management System**
SI3455ADV-T1-GE3-VB is suitable for power management systems, especially for DC-DC converters and power supply voltage regulator modules. In these applications, MOSFET is used as a switching element for voltage regulation and conversion, which can effectively improve power efficiency and reduce energy loss. Its low R_DS(ON) and high switching efficiency make it particularly suitable for efficient power management systems, especially in battery-powered applications.
2. **Load Switch Application**
In load switch circuits, SI3455ADV-T1-GE3-VB can be used for power switching, load protection and battery management systems. Due to its high current carrying capacity and low on-resistance, it is suitable for battery-powered devices and power systems that require efficient load control and switching performance. For example, in smart home appliances and portable devices, the battery power can be effectively managed to ensure stable system operation.
3. **Electric drive system**
SI3455ADV-T1-GE3-VB is suitable for electric drive systems, especially in applications such as power tools, electric toys, and electric bicycles. In these applications, MOSFET is used as a switching element to control the start and stop of the motor and the speed regulation. With its low on-resistance and high current carrying capacity, it can significantly improve the efficiency and performance of the drive system.
4. **LED drive circuit**
In the LED drive circuit, SI3455ADV-T1-GE3-VB is used as a switching element to effectively control the current flow, thereby achieving stable LED drive. Its low on-resistance and high efficiency characteristics make it outstanding in LED power management systems, which can reduce heat generation and energy loss, extend LED life, and improve overall system performance.
5. **Automotive Electronic Systems**
SI3455ADV-T1-GE3-VB plays an important role in automotive electronic applications, especially in battery management, on-board power converters, and electric drive systems. In automobiles, MOSFETs can be used to control high-power loads, electric vehicle battery management, and smart charging systems, helping to improve the efficiency and reliability of automotive electronic systems.
6. **Consumer Electronics**
In consumer electronics such as smartphones, tablets, portable audio devices, SI3455ADV-T1-GE3-VB is used for battery management, power conversion, and load switch control. Due to its low power loss and high switching efficiency, it can help extend the battery life of the device and improve the user experience, especially for efficient portable electronic devices.
7. **Industrial Control Systems**
In industrial automation, robotics, and production line control systems, SI3455ADV-T1-GE3-VB can be used as a power switch module. Its high current carrying capacity and excellent switching characteristics make it very suitable for driving motors, controlling industrial equipment power supplies and providing efficient energy conversion.
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SI3455ADV-T1-GE3-VB MOSFET has low on-resistance, high efficiency and high current handling capability, and is widely used in power management, load switching, LED driving, electric drive systems and other fields. Its high switching efficiency and low power consumption make it an ideal power switch component in modern electronic equipment and industrial control systems, especially for applications requiring high efficiency and low energy loss.
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