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SI3447BDV-T1-E3-VB Product details
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Product Introduction:
SI3447BDV-T1-E3 is a single P-channel MOSFET from Vishay in a SOT23-6 package for medium and low voltage applications. This MOSFET has a maximum drain-source voltage of -30V, a maximum drain current (ID) of -4.8A, and uses Trench technology to provide excellent conduction performance. Its threshold voltage (Vth) is -1.7V, which is suitable for operation under lower gate drive and has a lower on-resistance (RDS(ON) = 54mΩ@VGS=4.5V, 49mΩ@VGS=10V), thereby achieving efficient energy conversion and low power operation. SI3447BDV-T1-E3 is particularly suitable for applications requiring high efficiency, low loss and high voltage resistance, and is widely used in load switching, battery protection, power management and reverse voltage protection.
SI3447BDV-T1-E3 is a single P-channel MOSFET from Vishay in a SOT23-6 package for medium and low voltage applications. This MOSFET has a maximum drain-source voltage of -30V, a maximum drain current (ID) of -4.8A, and uses Trench technology to provide excellent conduction performance. Its threshold voltage (Vth) is -1.7V, which is suitable for operation under lower gate drive and has a lower on-resistance (RDS(ON) = 54mΩ@VGS=4.5V, 49mΩ@VGS=10V), thereby achieving efficient energy conversion and low power operation. SI3447BDV-T1-E3 is particularly suitable for applications requiring high efficiency, low loss and high voltage resistance, and is widely used in load switching, battery protection, power management and reverse voltage protection.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
- **Model**: SI3447BDV-T1-E3
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating Temperature Range**: -55°C to +150°C
- **Application**: Load switch, reverse voltage protection, battery protection circuit, power management, etc.
- **Model**: SI3447BDV-T1-E3
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating Temperature Range**: -55°C to +150°C
- **Application**: Load switch, reverse voltage protection, battery protection circuit, power management, etc.
Domain and module applications：
Application fields and module examples:
1. **Load switch**:
SI3447BDV-T1-E3 MOSFET is suitable for low voltage load switch applications. It can efficiently control the switching of low voltage devices and is suitable for portable battery-driven devices, low power sensors and smart home systems. The low RDS(ON) value of the MOSFET ensures lower energy loss, allowing the device to extend battery life and improve overall system efficiency.
2. **Battery protection circuit**:
Due to its high withstand voltage (-30V) and low on-resistance, SI3447BDV-T1-E3 is suitable for battery protection circuits. In applications such as lithium battery packs and mobile power supplies, this MOSFET can effectively prevent damage from overcurrent, overvoltage and reverse voltage, ensure that the battery will not be damaged during charging and discharging, and improve the safety and reliability of the battery.
3. **Reverse voltage protection**:
This MOSFET is also widely used in reverse voltage protection circuits to prevent devices from suffering reverse voltage damage when connected incorrectly. SI3447BDV-T1-E3 has a low on-resistance, which can effectively cut off the current and protect the circuit from damage. It is suitable for devices that require reverse voltage protection, such as automotive electronics, solar panels and mobile power supplies.
4. **Power Management**:
In power management systems, SI3447BDV-T1-E3 can be used as a switching element to control the switching of power. Its low on-resistance and high current carrying capacity enable it to provide efficient working performance in power conversion modules. Especially in DC-DC converters, low-voltage power adapters and embedded systems, this MOSFET helps to improve energy efficiency and reduce power consumption.
5. **High-efficiency power converter**:
In power conversion and power amplifier circuits, SI3447BDV-T1-E3's low RDS(ON) and high current carrying capacity make it an ideal switching element. It is particularly suitable for medium voltage power systems that require efficient power conversion, such as AC-DC adapters, DC-DC converters, wireless power systems, etc.
6. **Smart Home and Wearable Devices**:
In low-power applications of smart home devices and wearable devices, the SI3447BDV-T1-E3 can provide reliable current control. Its low power consumption and high efficiency make it very suitable for battery management and load switching in these devices, especially in environments with frequent load switching, which can effectively reduce energy loss.
7. **Automotive Electronics and Sensors**:
In automotive electronics applications, the SI3447BDV-T1-E3 can be used in circuits such as on-board power management, battery protection, and sensor control. It can operate stably under extreme environmental conditions (such as high and low temperatures), and is very suitable for automotive battery management systems (BMS), electric vehicle battery protection, and on-board smart sensor systems.
1. **Load switch**:
SI3447BDV-T1-E3 MOSFET is suitable for low voltage load switch applications. It can efficiently control the switching of low voltage devices and is suitable for portable battery-driven devices, low power sensors and smart home systems. The low RDS(ON) value of the MOSFET ensures lower energy loss, allowing the device to extend battery life and improve overall system efficiency.
2. **Battery protection circuit**:
Due to its high withstand voltage (-30V) and low on-resistance, SI3447BDV-T1-E3 is suitable for battery protection circuits. In applications such as lithium battery packs and mobile power supplies, this MOSFET can effectively prevent damage from overcurrent, overvoltage and reverse voltage, ensure that the battery will not be damaged during charging and discharging, and improve the safety and reliability of the battery.
3. **Reverse voltage protection**:
This MOSFET is also widely used in reverse voltage protection circuits to prevent devices from suffering reverse voltage damage when connected incorrectly. SI3447BDV-T1-E3 has a low on-resistance, which can effectively cut off the current and protect the circuit from damage. It is suitable for devices that require reverse voltage protection, such as automotive electronics, solar panels and mobile power supplies.
4. **Power Management**:
In power management systems, SI3447BDV-T1-E3 can be used as a switching element to control the switching of power. Its low on-resistance and high current carrying capacity enable it to provide efficient working performance in power conversion modules. Especially in DC-DC converters, low-voltage power adapters and embedded systems, this MOSFET helps to improve energy efficiency and reduce power consumption.
5. **High-efficiency power converter**:
In power conversion and power amplifier circuits, SI3447BDV-T1-E3's low RDS(ON) and high current carrying capacity make it an ideal switching element. It is particularly suitable for medium voltage power systems that require efficient power conversion, such as AC-DC adapters, DC-DC converters, wireless power systems, etc.
6. **Smart Home and Wearable Devices**:
In low-power applications of smart home devices and wearable devices, the SI3447BDV-T1-E3 can provide reliable current control. Its low power consumption and high efficiency make it very suitable for battery management and load switching in these devices, especially in environments with frequent load switching, which can effectively reduce energy loss.
7. **Automotive Electronics and Sensors**:
In automotive electronics applications, the SI3447BDV-T1-E3 can be used in circuits such as on-board power management, battery protection, and sensor control. It can operate stably under extreme environmental conditions (such as high and low temperatures), and is very suitable for automotive battery management systems (BMS), electric vehicle battery protection, and on-board smart sensor systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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