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SI3443CDV-T1-GE3-VB Product details
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1. Product Introduction: SI3443CDV-T1-GE3
SI3443CDV-T1-GE3 is a single P-type MOSFET in SOT23-6 package, designed with advanced Trench technology, optimized for low voltage, high current switching applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and the maximum drain current (ID) is -4.8A, which is suitable for applications that require high current carrying capacity and low power loss. Its on-resistance (RDS(ON)) is 54mΩ and 49mΩ at a gate drive voltage of 4.5V and 10V respectively, providing extremely low switching loss and heat loss, which can improve the efficiency of the overall system. SI3443CDV-T1-GE3 is widely used in power management, battery management, power tools, LED drive, load switch and other fields, especially suitable for designs with high requirements for high efficiency, low power consumption and space miniaturization.
SI3443CDV-T1-GE3 is a single P-type MOSFET in SOT23-6 package, designed with advanced Trench technology, optimized for low voltage, high current switching applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and the maximum drain current (ID) is -4.8A, which is suitable for applications that require high current carrying capacity and low power loss. Its on-resistance (RDS(ON)) is 54mΩ and 49mΩ at a gate drive voltage of 4.5V and 10V respectively, providing extremely low switching loss and heat loss, which can improve the efficiency of the overall system. SI3443CDV-T1-GE3 is widely used in power management, battery management, power tools, LED drive, load switch and other fields, especially suitable for designs with high requirements for high efficiency, low power consumption and space miniaturization.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
2. Detailed parameter description:
- **Model**: SI3443CDV-T1-GE3
- **Package type**: SOT23-6
- **Configuration**: Single P-type MOSFET
- **Drain to source voltage (VDS)**: -30V (max)
- **Gate to source voltage (VGS)**: ±20V (max)
- **Throwing voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
- **Number of pins**: 6 Pin
- **Model**: SI3443CDV-T1-GE3
- **Package type**: SOT23-6
- **Configuration**: Single P-type MOSFET
- **Drain to source voltage (VDS)**: -30V (max)
- **Gate to source voltage (VGS)**: ±20V (max)
- **Throwing voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
- **Number of pins**: 6 Pin
Domain and module applications：
3. Application fields and module examples:
# 1. Power management system:
SI3443CDV-T1-GE3 can be widely used in power management systems, especially in power modules such as DC-DC converters, voltage regulators, and load switches. Its low on-resistance characteristics enable it to efficiently transmit current, reduce energy loss, and improve overall system efficiency. In low-voltage power supply and high-efficiency power supply designs, it can help reduce power losses, extend system life, and reduce heat generation.
# 6. Power tools and smart home devices:
In power tools and smart home devices, SI3443CDV-T1-GE3 can be used for functions such as power switching, battery management, and load control. Its excellent current carrying capacity and low power consumption make it an ideal choice for power tools, smart appliances, smart lamps, and other devices. In these applications, MOSFETs can help achieve longer working time, higher operating efficiency, and lower heat generation.
# 7. Electric vehicles:
In electric vehicles, the SI3443CDV-T1-GE3 can be used in battery management systems, motor drives, power regulation and protection circuits. Its high current handling capability and low power consumption characteristics help these devices maintain a balance between low energy consumption and high efficiency, ensuring stable performance and long driving range of electric vehicles.
# 1. Power management system:
SI3443CDV-T1-GE3 can be widely used in power management systems, especially in power modules such as DC-DC converters, voltage regulators, and load switches. Its low on-resistance characteristics enable it to efficiently transmit current, reduce energy loss, and improve overall system efficiency. In low-voltage power supply and high-efficiency power supply designs, it can help reduce power losses, extend system life, and reduce heat generation.
# 6. Power tools and smart home devices:
In power tools and smart home devices, SI3443CDV-T1-GE3 can be used for functions such as power switching, battery management, and load control. Its excellent current carrying capacity and low power consumption make it an ideal choice for power tools, smart appliances, smart lamps, and other devices. In these applications, MOSFETs can help achieve longer working time, higher operating efficiency, and lower heat generation.
# 7. Electric vehicles:
In electric vehicles, the SI3443CDV-T1-GE3 can be used in battery management systems, motor drives, power regulation and protection circuits. Its high current handling capability and low power consumption characteristics help these devices maintain a balance between low energy consumption and high efficiency, ensuring stable performance and long driving range of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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