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SI3443BDV-T1-E3-VB Product details
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Product Introduction:
**SI3443BDV-T1-E3-VB** is a unipolar P-type MOSFET using Trench technology, packaged in SOT23-6 type, with efficient switching characteristics and low on-resistance, designed for low voltage and small volume applications. This MOSFET provides a maximum drain-source voltage of -30V and a maximum drain current of -4.8A, and can play an important role in applications such as high-efficiency power management, load switching, and battery protection. Its low on-resistance and reliable switching performance make it very suitable for portable devices, consumer electronics and other compact systems, especially in areas requiring efficient power control and low energy consumption.
**SI3443BDV-T1-E3-VB** is a unipolar P-type MOSFET using Trench technology, packaged in SOT23-6 type, with efficient switching characteristics and low on-resistance, designed for low voltage and small volume applications. This MOSFET provides a maximum drain-source voltage of -30V and a maximum drain current of -4.8A, and can play an important role in applications such as high-efficiency power management, load switching, and battery protection. Its low on-resistance and reliable switching performance make it very suitable for portable devices, consumer electronics and other compact systems, especially in areas requiring efficient power control and low energy consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
- **Package type**: SOT23-6
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
- **Package type**: SOT23-6
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
Domain and module applications：
Typical application areas and modules:
1. **Battery Management System (BMS)**:
SI3443BDV-T1-E3-VB can be widely used in battery management systems, especially for efficient current switching during battery charging and discharging. The MOSFET has a low on-resistance, which can reduce energy loss during battery charging and discharging and extend the battery life. In portable battery-powered devices such as smartphones, tablets, and wearable devices, SI3443BDV-T1-E3-VB can effectively manage the battery charging and discharging process to ensure stable battery operation.
2. **Load Switch and Power Path Control**:
In power path control and load switch applications, SI3443BDV-T1-E3-VB acts as a switching element to provide efficient current switching capabilities. It can be used to switch the path between the battery or power source and the load, ensuring that the device can turn on the power when needed and disconnect the current when turned off. In embedded systems, USB power management, and other consumer electronics, it can reduce power consumption and improve the efficiency of equipment.
3. **Overvoltage/Overcurrent Protection**:
This MOSFET plays an important role in overvoltage or overcurrent protection circuits. SI3443BDV-T1-E3-VB can quickly cut off the current when the system voltage is too high to avoid damage to other components. It can be used in power adapters, battery chargers, and other power management modules to provide necessary voltage protection to ensure the safety and stability of the equipment.
4. **DC-DC Converter**:
Due to its low on-resistance and efficient switching characteristics, SI3443BDV-T1-E3-VB is suitable for use in DC-DC converters, especially in applications that require efficient power conversion and miniaturized design. In mobile power supplies, chargers, and battery-driven systems, MOSFET can effectively reduce power loss, improve conversion efficiency, and extend the battery life and service life of the device.
5. **Communication Equipment and Embedded Systems**:
In communication equipment and embedded systems, SI3443BDV-T1-E3-VB can be used in modules such as power switching, load management, and signal path control. The high efficiency and small size of this MOSFET make it particularly suitable for portable devices and small embedded systems that require low power consumption and high reliability. It can ensure stable system operation and improve energy efficiency.
1. **Battery Management System (BMS)**:
SI3443BDV-T1-E3-VB can be widely used in battery management systems, especially for efficient current switching during battery charging and discharging. The MOSFET has a low on-resistance, which can reduce energy loss during battery charging and discharging and extend the battery life. In portable battery-powered devices such as smartphones, tablets, and wearable devices, SI3443BDV-T1-E3-VB can effectively manage the battery charging and discharging process to ensure stable battery operation.
2. **Load Switch and Power Path Control**:
In power path control and load switch applications, SI3443BDV-T1-E3-VB acts as a switching element to provide efficient current switching capabilities. It can be used to switch the path between the battery or power source and the load, ensuring that the device can turn on the power when needed and disconnect the current when turned off. In embedded systems, USB power management, and other consumer electronics, it can reduce power consumption and improve the efficiency of equipment.
3. **Overvoltage/Overcurrent Protection**:
This MOSFET plays an important role in overvoltage or overcurrent protection circuits. SI3443BDV-T1-E3-VB can quickly cut off the current when the system voltage is too high to avoid damage to other components. It can be used in power adapters, battery chargers, and other power management modules to provide necessary voltage protection to ensure the safety and stability of the equipment.
4. **DC-DC Converter**:
Due to its low on-resistance and efficient switching characteristics, SI3443BDV-T1-E3-VB is suitable for use in DC-DC converters, especially in applications that require efficient power conversion and miniaturized design. In mobile power supplies, chargers, and battery-driven systems, MOSFET can effectively reduce power loss, improve conversion efficiency, and extend the battery life and service life of the device.
5. **Communication Equipment and Embedded Systems**:
In communication equipment and embedded systems, SI3443BDV-T1-E3-VB can be used in modules such as power switching, load management, and signal path control. The high efficiency and small size of this MOSFET make it particularly suitable for portable devices and small embedded systems that require low power consumption and high reliability. It can ensure stable system operation and improve energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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