中文
English
SI3441DV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
SI3441DV-T1-GE3-VB MOSFET Product Introduction
SI3441DV-T1-GE3-VB is a single P-channel MOSFET in SOT23-6 package, suitable for a variety of low to medium voltage switching applications. This model has a maximum drain-source voltage V_DS of -30V and a maximum gate-source voltage V_GS of ±20V, suitable for high-efficiency power switch control in a lower voltage environment. Its threshold voltage (V_th) is -1.7V, and the on-resistance (R_DS(ON)) is 54mΩ at V_GS = 4.5V and 49mΩ at V_GS = 10V, with lower conduction losses and higher system efficiency. The maximum drain current (I_D) of this MOSFET is -4.8A, which can support higher current loads and is suitable for medium voltage applications. Using Trench technology, SI3441DV-T1-GE3-VB provides high-efficiency, low-power-loss switching characteristics.
Its application range includes power management, electric drive, load switch, LED drive and other fields, especially suitable for electronic devices with high requirements for power conversion efficiency.
---
SI3441DV-T1-GE3-VB is a single P-channel MOSFET in SOT23-6 package, suitable for a variety of low to medium voltage switching applications. This model has a maximum drain-source voltage V_DS of -30V and a maximum gate-source voltage V_GS of ±20V, suitable for high-efficiency power switch control in a lower voltage environment. Its threshold voltage (V_th) is -1.7V, and the on-resistance (R_DS(ON)) is 54mΩ at V_GS = 4.5V and 49mΩ at V_GS = 10V, with lower conduction losses and higher system efficiency. The maximum drain current (I_D) of this MOSFET is -4.8A, which can support higher current loads and is suitable for medium voltage applications. Using Trench technology, SI3441DV-T1-GE3-VB provides high-efficiency, low-power-loss switching characteristics.
Its application range includes power management, electric drive, load switch, LED drive and other fields, especially suitable for electronic devices with high requirements for power conversion efficiency.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
SI3441DV-T1-GE3-VB MOSFET Detailed parameter description
- **Model**: SI3441DV-T1-GE3-VB
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- At V_GS = 4.5V, R_DS(ON) = 54mΩ
- At V_GS = 10V, R_DS(ON) = 49mΩ
- **Maximum drain current (I_D)**: -4.8A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package type**: SOT23-6
---
- **Model**: SI3441DV-T1-GE3-VB
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- At V_GS = 4.5V, R_DS(ON) = 54mΩ
- At V_GS = 10V, R_DS(ON) = 49mΩ
- **Maximum drain current (I_D)**: -4.8A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package type**: SOT23-6
---
Domain and module applications：
SI3441DV-T1-GE3-VB MOSFET Applications and Modules
1. **Power Management System**
SI3441DV-T1-GE3-VB can be used in power management applications, especially in DC-DC converters and power supply modules. Due to its low on-resistance, this MOSFET can achieve efficient voltage conversion and reduce power loss. This makes it particularly suitable for low-power devices such as portable electronics, battery-powered systems, and applications that require high-efficiency battery management.
2. **Load Switch Applications**
In load switch circuits, SI3441DV-T1-GE3-VB can be used to control the current switch, which is suitable for use in areas such as battery protection, power management, and battery charging systems. Its high current carrying capacity makes it very suitable for high-power load control, reducing energy loss while ensuring system reliability.
3. **Electric drive system**
In electric drive applications, SI3441DV-T1-GE3-VB can be used as a high-efficiency switching element in the drive circuits of electric equipment such as power tools, electric vehicles, and electric toys. Its low on-resistance and high current handling capacity can effectively improve the efficiency of the drive system, reduce heat and energy loss, and ensure the reliability and long-term stable operation of the electric drive system.
4. **LED drive circuit**
SI3441DV-T1-GE3-VB can be used as a switching element in LED drive circuits, especially in situations requiring high efficiency and low power loss. LED drive systems usually require precise current control and efficient power conversion, and the low R_DS(ON) and high voltage withstand capability of SI3441DV-T1-GE3-VB enable it to perform well in these applications.
5. **Automotive Electronic Systems**
In the automotive electronics field, SI3441DV-T1-GE3-VB can be used in applications such as battery management systems, LED drivers, and vehicle power converters. Its low power loss characteristics make it suitable for efficient vehicle power management systems, which can ensure the stability and efficiency of automotive electronic equipment during long-term use, and is especially suitable for efficient battery charging and power control systems.
6. **Consumer Electronics**
In consumer electronics such as smartphones, tablets, and portable audio, SI3441DV-T1-GE3-VB is used as a switching element in the power management module for battery management, low-power power conversion, and load control. Its high efficiency and low power consumption characteristics help extend the battery life of the device and improve the user experience.
7. **Industrial Control Systems**
In industrial automation and control systems, SI3441DV-T1-GE3-VB is used as a power switch to support the drive and control of high current loads, and is suitable for applications such as industrial electric drives, automated production lines, and robots. Its high current handling capability and high efficiency make it an ideal power switch component in these complex systems.
---
SI3441DV-T1-GE3-VB MOSFET is widely used in power management, load switching, LED driving, and other fields. Its efficient voltage conversion and low power consumption make it an ideal switching component in modern electronic devices and electric drive systems, especially for systems that require high efficiency and high reliability.
1. **Power Management System**
SI3441DV-T1-GE3-VB can be used in power management applications, especially in DC-DC converters and power supply modules. Due to its low on-resistance, this MOSFET can achieve efficient voltage conversion and reduce power loss. This makes it particularly suitable for low-power devices such as portable electronics, battery-powered systems, and applications that require high-efficiency battery management.
2. **Load Switch Applications**
In load switch circuits, SI3441DV-T1-GE3-VB can be used to control the current switch, which is suitable for use in areas such as battery protection, power management, and battery charging systems. Its high current carrying capacity makes it very suitable for high-power load control, reducing energy loss while ensuring system reliability.
3. **Electric drive system**
In electric drive applications, SI3441DV-T1-GE3-VB can be used as a high-efficiency switching element in the drive circuits of electric equipment such as power tools, electric vehicles, and electric toys. Its low on-resistance and high current handling capacity can effectively improve the efficiency of the drive system, reduce heat and energy loss, and ensure the reliability and long-term stable operation of the electric drive system.
4. **LED drive circuit**
SI3441DV-T1-GE3-VB can be used as a switching element in LED drive circuits, especially in situations requiring high efficiency and low power loss. LED drive systems usually require precise current control and efficient power conversion, and the low R_DS(ON) and high voltage withstand capability of SI3441DV-T1-GE3-VB enable it to perform well in these applications.
5. **Automotive Electronic Systems**
In the automotive electronics field, SI3441DV-T1-GE3-VB can be used in applications such as battery management systems, LED drivers, and vehicle power converters. Its low power loss characteristics make it suitable for efficient vehicle power management systems, which can ensure the stability and efficiency of automotive electronic equipment during long-term use, and is especially suitable for efficient battery charging and power control systems.
6. **Consumer Electronics**
In consumer electronics such as smartphones, tablets, and portable audio, SI3441DV-T1-GE3-VB is used as a switching element in the power management module for battery management, low-power power conversion, and load control. Its high efficiency and low power consumption characteristics help extend the battery life of the device and improve the user experience.
7. **Industrial Control Systems**
In industrial automation and control systems, SI3441DV-T1-GE3-VB is used as a power switch to support the drive and control of high current loads, and is suitable for applications such as industrial electric drives, automated production lines, and robots. Its high current handling capability and high efficiency make it an ideal power switch component in these complex systems.
---
SI3441DV-T1-GE3-VB MOSFET is widely used in power management, load switching, LED driving, and other fields. Its efficient voltage conversion and low power consumption make it an ideal switching component in modern electronic devices and electric drive systems, especially for systems that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
