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SI3441BDV-T1-GE3-VB Product details
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SI3441BDV-T1-GE3-VB Product Introduction
**SI3441BDV-T1-GE3-VB** is a single P-channel MOSFET in a **SOT23-6** package, designed for low-voltage, high-efficiency switching power supplies. Its maximum drain-source voltage is **-30V** and its maximum drain current is **-4.8A**, making it suitable for a variety of applications requiring high-side switch control and low-power circuits. This MOSFET uses **Trench** technology and has a lower on-resistance (**RDS(ON)**), which can effectively reduce switching losses and improve system efficiency. Due to its **-1.7V** gate-source turn-on voltage, SI3441BDV-T1-GE3-VB can operate at a low gate voltage and is suitable for drive and load control applications.
**SI3441BDV-T1-GE3-VB** is a single P-channel MOSFET in a **SOT23-6** package, designed for low-voltage, high-efficiency switching power supplies. Its maximum drain-source voltage is **-30V** and its maximum drain current is **-4.8A**, making it suitable for a variety of applications requiring high-side switch control and low-power circuits. This MOSFET uses **Trench** technology and has a lower on-resistance (**RDS(ON)**), which can effectively reduce switching losses and improve system efficiency. Due to its **-1.7V** gate-source turn-on voltage, SI3441BDV-T1-GE3-VB can operate at a low gate voltage and is suitable for drive and load control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
SI3441BDV-T1-GE3-VB Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source turn-on voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
- **Package**: SOT23-6
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source turn-on voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
Domain and module applications：
SI3441BDV-T1-GE3-VB Applications and Modules
1. **Low-voltage power switch**: SI3441BDV-T1-GE3-VB has low on-resistance and high current carrying capacity, suitable for high-side switch in low-voltage power converters. Its **-30V** withstand voltage enables it to work efficiently in common low-voltage systems, such as **DC-DC converters**.
- **Example**: In **5V or 12V** systems, as a **high-side switch**, it can efficiently control the load and reduce energy loss.
2. **Battery Management System (BMS)**: This MOSFET can be applied to battery protection and charging control modules, especially battery management in low-voltage systems, to protect batteries from abnormal conditions such as overvoltage and overcurrent.
- **Example**: In **electric bicycles or energy storage systems**, SI3441BDV-T1-GE3-VB is used as a switching element in the battery management circuit to control the battery charging and discharging process and protect the safety of the battery system.
3. **Load control and switching circuit**: As a P-channel MOSFET, SI3441BDV-T1-GE3-VB is particularly suitable for high-side load switching applications. Its low **RDS(ON)** characteristics enable it to work efficiently in low-power circuits, suitable for switching power supplies and load control circuits.
- **Example**: In **LED light control modules**, MOSFET can be used as a switching element to optimize current management and extend LED life by controlling the current flow to the LED.
4. **Motor drive circuit**: Due to its good switching characteristics, SI3441BDV-T1-GE3-VB is also suitable for low-voltage motor drive systems, especially in situations where higher currents are required.
- **Example**: In **small DC motor drive circuit**, it is used as a high-side switch to provide stable current and control the speed of the motor.
5. **Inverter and power conversion module**: This MOSFET is suitable for some inverters and power conversion modules that require low power loss, especially **low-voltage inverter** and **switching power supply**, to improve overall energy efficiency through efficient switching control.
- **Example**: In **UPS power supply** or **solar inverter**, MOSFET is a key switching element to help the power module convert DC power into AC power and ensure efficient energy conversion.
1. **Low-voltage power switch**: SI3441BDV-T1-GE3-VB has low on-resistance and high current carrying capacity, suitable for high-side switch in low-voltage power converters. Its **-30V** withstand voltage enables it to work efficiently in common low-voltage systems, such as **DC-DC converters**.
- **Example**: In **5V or 12V** systems, as a **high-side switch**, it can efficiently control the load and reduce energy loss.
2. **Battery Management System (BMS)**: This MOSFET can be applied to battery protection and charging control modules, especially battery management in low-voltage systems, to protect batteries from abnormal conditions such as overvoltage and overcurrent.
- **Example**: In **electric bicycles or energy storage systems**, SI3441BDV-T1-GE3-VB is used as a switching element in the battery management circuit to control the battery charging and discharging process and protect the safety of the battery system.
3. **Load control and switching circuit**: As a P-channel MOSFET, SI3441BDV-T1-GE3-VB is particularly suitable for high-side load switching applications. Its low **RDS(ON)** characteristics enable it to work efficiently in low-power circuits, suitable for switching power supplies and load control circuits.
- **Example**: In **LED light control modules**, MOSFET can be used as a switching element to optimize current management and extend LED life by controlling the current flow to the LED.
4. **Motor drive circuit**: Due to its good switching characteristics, SI3441BDV-T1-GE3-VB is also suitable for low-voltage motor drive systems, especially in situations where higher currents are required.
- **Example**: In **small DC motor drive circuit**, it is used as a high-side switch to provide stable current and control the speed of the motor.
5. **Inverter and power conversion module**: This MOSFET is suitable for some inverters and power conversion modules that require low power loss, especially **low-voltage inverter** and **switching power supply**, to improve overall energy efficiency through efficient switching control.
- **Example**: In **UPS power supply** or **solar inverter**, MOSFET is a key switching element to help the power module convert DC power into AC power and ensure efficient energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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