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SI3435DV-T1-GE3-VB Product details
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SI3435DV-T1-GE3-VB MOSFET Product Introduction
SI3435DV-T1-GE3-VB is a unipolar P-channel MOSFET produced by **Vishay** and uses **SOT23-6** package. This MOSFET is designed for low-voltage, high-efficiency applications and is suitable for various power management and load switching applications. Its drain-source voltage (V_DS) is -30V, the gate-source voltage (V_GS) is ±20V, and the gate threshold voltage (V_th) is -1.7V. This MOSFET can maintain low on-resistance (R_DS(ON)) under multiple voltage and current conditions, providing efficient switching performance. Through **Trench** technology, it can achieve high efficiency while reducing switching losses, suitable for various low-power, high-efficiency circuit designs.
SI3435DV-T1-GE3-VB is a unipolar P-channel MOSFET produced by **Vishay** and uses **SOT23-6** package. This MOSFET is designed for low-voltage, high-efficiency applications and is suitable for various power management and load switching applications. Its drain-source voltage (V_DS) is -30V, the gate-source voltage (V_GS) is ±20V, and the gate threshold voltage (V_th) is -1.7V. This MOSFET can maintain low on-resistance (R_DS(ON)) under multiple voltage and current conditions, providing efficient switching performance. Through **Trench** technology, it can achieve high efficiency while reducing switching losses, suitable for various low-power, high-efficiency circuit designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
SI3435DV-T1-GE3-VB MOSFET Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Unipolar P-channel MOSFET
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: -1.7V
- **Channel resistance (R_DS(ON))**:
- 54mΩ (at V_GS=4.5V)
- 49mΩ (at V_GS=10V)
- **Maximum drain current (I_D)**: -4.8A
- **Technology**: Trench
- **Application**: Suitable for low voltage power switch, power management, load switch and other fields.
- **Package**: SOT23-6
- **Configuration**: Unipolar P-channel MOSFET
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: -1.7V
- **Channel resistance (R_DS(ON))**:
- 54mΩ (at V_GS=4.5V)
- 49mΩ (at V_GS=10V)
- **Maximum drain current (I_D)**: -4.8A
- **Technology**: Trench
- **Application**: Suitable for low voltage power switch, power management, load switch and other fields.
Domain and module applications：
Application fields and module examples
1. **Power switch and power management**:
SI3435DV-T1-GE3-VB's low R_DS(ON) and high current capability make it an ideal choice for power management circuits. It can be used in power switches and battery-powered systems of portable devices, especially in mobile devices, portable audio devices, tablets and other applications to help optimize power management and reduce power consumption.
2. **Load switch application**:
This MOSFET can be used as a load switch to control the start and stop of high current loads in low-voltage circuits. It is suitable for switch control of devices such as LED drivers, motor drivers, sensors, wireless communication modules, etc., especially in applications with low power and strict requirements on on-resistance, which can significantly improve the efficiency of the system.
3. **DC-DC Converter**:
In DC-DC converters, especially Buck and Boost power converters, the low on-resistance of SI3435DV-T1-GE3-VB can effectively reduce power loss during the conversion process and improve power conversion efficiency. It is suitable for high-efficiency power systems such as consumer electronics, power tools, smart devices, etc.
4. **Battery Protection and Management System**:
In the battery management system, SI3435DV-T1-GE3-VB can be used in battery protection circuits to provide stable current control and battery charge and discharge protection, suitable for smart homes, wearable devices, electric vehicles and other fields. It can effectively control the battery charging and discharging process, prevent overcharging and over-discharging, and extend battery life.
5. **Smart Devices and Embedded Systems**:
Due to its low gate voltage threshold and high-efficiency switching performance, the SI3435DV-T1-GE3-VB is suitable for power switching in smart devices. Especially in low-power embedded systems, Internet of Things (IoT) devices, wearable devices and sensor modules, it can provide precise power control and reduce energy losses.
6. **Automation and Control Systems**:
This MOSFET can be used to perform fast, low-power current switching in automation systems. It can be used in applications such as smart switching, motor control, equipment start and stop, and voltage regulation, especially in high-efficiency power modules and automation control systems.
The high efficiency, high current capability, low on-resistance and wide voltage range of the SI3435DV-T1-GE3-VB make it an ideal choice for a variety of low-power applications, and is widely used in portable electronic devices, power conversion modules, battery management and intelligent control systems.
1. **Power switch and power management**:
SI3435DV-T1-GE3-VB's low R_DS(ON) and high current capability make it an ideal choice for power management circuits. It can be used in power switches and battery-powered systems of portable devices, especially in mobile devices, portable audio devices, tablets and other applications to help optimize power management and reduce power consumption.
2. **Load switch application**:
This MOSFET can be used as a load switch to control the start and stop of high current loads in low-voltage circuits. It is suitable for switch control of devices such as LED drivers, motor drivers, sensors, wireless communication modules, etc., especially in applications with low power and strict requirements on on-resistance, which can significantly improve the efficiency of the system.
3. **DC-DC Converter**:
In DC-DC converters, especially Buck and Boost power converters, the low on-resistance of SI3435DV-T1-GE3-VB can effectively reduce power loss during the conversion process and improve power conversion efficiency. It is suitable for high-efficiency power systems such as consumer electronics, power tools, smart devices, etc.
4. **Battery Protection and Management System**:
In the battery management system, SI3435DV-T1-GE3-VB can be used in battery protection circuits to provide stable current control and battery charge and discharge protection, suitable for smart homes, wearable devices, electric vehicles and other fields. It can effectively control the battery charging and discharging process, prevent overcharging and over-discharging, and extend battery life.
5. **Smart Devices and Embedded Systems**:
Due to its low gate voltage threshold and high-efficiency switching performance, the SI3435DV-T1-GE3-VB is suitable for power switching in smart devices. Especially in low-power embedded systems, Internet of Things (IoT) devices, wearable devices and sensor modules, it can provide precise power control and reduce energy losses.
6. **Automation and Control Systems**:
This MOSFET can be used to perform fast, low-power current switching in automation systems. It can be used in applications such as smart switching, motor control, equipment start and stop, and voltage regulation, especially in high-efficiency power modules and automation control systems.
The high efficiency, high current capability, low on-resistance and wide voltage range of the SI3435DV-T1-GE3-VB make it an ideal choice for a variety of low-power applications, and is widely used in portable electronic devices, power conversion modules, battery management and intelligent control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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