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SI3433DV-T1-GE3-VB Product details
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1. Product Introduction: SI3433DV-T1-GE3
SI3433DV-T1-GE3 is a single P-type MOSFET in SOT23-6 package, designed with Trench technology, optimized for medium voltage and power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and the maximum drain current (ID) is -4.8A, which is suitable for applications that require higher current handling capabilities. Its on-resistance (RDS(ON)) is 54mΩ and 49mΩ at 4.5V and 10V gate drive voltages, respectively, with low switching loss and power consumption, providing efficient current control. SI3433DV-T1-GE3 is mainly used in battery management, power switching, power tools, LED driving and other fields, and can provide optimized solutions for low-power design.
SI3433DV-T1-GE3 is a single P-type MOSFET in SOT23-6 package, designed with Trench technology, optimized for medium voltage and power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and the maximum drain current (ID) is -4.8A, which is suitable for applications that require higher current handling capabilities. Its on-resistance (RDS(ON)) is 54mΩ and 49mΩ at 4.5V and 10V gate drive voltages, respectively, with low switching loss and power consumption, providing efficient current control. SI3433DV-T1-GE3 is mainly used in battery management, power switching, power tools, LED driving and other fields, and can provide optimized solutions for low-power design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
2. Detailed parameter description:
- **Model**: SI3433DV-T1-GE3
- **Package type**: SOT23-6
- **Configuration**: Single P-type MOSFET
- **Drain to source voltage (VDS)**: -30V (max)
- **Gate to source voltage (VGS)**: ±20V (max)
- **Throw voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
- **Number of pins**: 6 Pin
- **Model**: SI3433DV-T1-GE3
- **Package type**: SOT23-6
- **Configuration**: Single P-type MOSFET
- **Drain to source voltage (VDS)**: -30V (max)
- **Gate to source voltage (VGS)**: ±20V (max)
- **Throw voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
- **Number of pins**: 6 Pin
Domain and module applications：
3. Application fields and module examples:
# 1. Power management system:
SI3433DV-T1-GE3 is suitable for various power management systems, especially in DC-DC converters, voltage regulators and load switch circuits that require low power consumption and high efficiency. Its low on-resistance characteristics enable it to effectively reduce power loss and provide efficient current control. It is widely used in battery management, power filtering and voltage stabilization power supply modules of portable devices.
# 6. Power tools and automotive electronics:
In power tools and automotive electronic equipment, SI3433DV-T1-GE3 can be used as a power switch, load switch and protection switch. Its high current carrying capacity and low power consumption characteristics enable it to effectively control power transmission in power tools, or be used in automotive power management systems to control battery charging and discharging, ensuring efficient and safe operation of the equipment.
# 7. Smart Home Applications:
In the field of smart home, SI3433DV-T1-GE3 can be used in the power management and control circuits of home automation equipment, such as smart sockets, smart lamps, and power switching and load regulation of other home devices. Due to its low power consumption and efficient switching performance, it can reduce energy consumption and improve the overall performance of the system, meeting the reliability and efficiency requirements of smart homes.
# 1. Power management system:
SI3433DV-T1-GE3 is suitable for various power management systems, especially in DC-DC converters, voltage regulators and load switch circuits that require low power consumption and high efficiency. Its low on-resistance characteristics enable it to effectively reduce power loss and provide efficient current control. It is widely used in battery management, power filtering and voltage stabilization power supply modules of portable devices.
# 6. Power tools and automotive electronics:
In power tools and automotive electronic equipment, SI3433DV-T1-GE3 can be used as a power switch, load switch and protection switch. Its high current carrying capacity and low power consumption characteristics enable it to effectively control power transmission in power tools, or be used in automotive power management systems to control battery charging and discharging, ensuring efficient and safe operation of the equipment.
# 7. Smart Home Applications:
In the field of smart home, SI3433DV-T1-GE3 can be used in the power management and control circuits of home automation equipment, such as smart sockets, smart lamps, and power switching and load regulation of other home devices. Due to its low power consumption and efficient switching performance, it can reduce energy consumption and improve the overall performance of the system, meeting the reliability and efficiency requirements of smart homes.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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