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SI3430DV-T1-GE3-VB Product details
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SI3430DV-T1-GE3-VB MOSFET Product Introduction
SI3430DV-T1-GE3-VB is a single N-channel MOSFET in SOT23-6 package, suitable for a variety of low to medium voltage switching applications. Its maximum drain-source voltage V_DS is 100V, and the gate-source voltage V_GS is ±20V, which is suitable for power management and power switching circuits that require high voltage tolerance. The threshold voltage (V_th) of this MOSFET is 1.8V, and the on-resistance (R_DS(ON)) is 105mΩ at V_GS = 4.5V and 95mΩ at V_GS = 10V. It has low conduction loss and high efficiency, and can achieve low power loss under high current load. The maximum leakage current (I_D) is 3.2A. The use of Trench technology makes this MOSFET perform well in high-frequency and high-efficiency power conversion, suitable for various power management, load switching and medium voltage applications.
This MOSFET is suitable for a wide range of applications such as power conversion, DC-DC converters, electric drive systems and battery management. Due to its high performance and low power consumption, the SI3430DV-T1-GE3-VB is an ideal switching element in modern low-voltage and medium-voltage electronic devices.
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SI3430DV-T1-GE3-VB is a single N-channel MOSFET in SOT23-6 package, suitable for a variety of low to medium voltage switching applications. Its maximum drain-source voltage V_DS is 100V, and the gate-source voltage V_GS is ±20V, which is suitable for power management and power switching circuits that require high voltage tolerance. The threshold voltage (V_th) of this MOSFET is 1.8V, and the on-resistance (R_DS(ON)) is 105mΩ at V_GS = 4.5V and 95mΩ at V_GS = 10V. It has low conduction loss and high efficiency, and can achieve low power loss under high current load. The maximum leakage current (I_D) is 3.2A. The use of Trench technology makes this MOSFET perform well in high-frequency and high-efficiency power conversion, suitable for various power management, load switching and medium voltage applications.
This MOSFET is suitable for a wide range of applications such as power conversion, DC-DC converters, electric drive systems and battery management. Due to its high performance and low power consumption, the SI3430DV-T1-GE3-VB is an ideal switching element in modern low-voltage and medium-voltage electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | 95mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
SI3430DV-T1-GE3-VB MOSFET Detailed parameter description
- **Model**: SI3430DV-T1-GE3-VB
- **Package type**: SOT23-6
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**:
- At V_GS = 4.5V, R_DS(ON) = 105mΩ
- At V_GS = 10V, R_DS(ON) = 95mΩ
- **Maximum drain current (I_D)**: 3.2A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package type**: SOT23-6
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- **Model**: SI3430DV-T1-GE3-VB
- **Package type**: SOT23-6
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**:
- At V_GS = 4.5V, R_DS(ON) = 105mΩ
- At V_GS = 10V, R_DS(ON) = 95mΩ
- **Maximum drain current (I_D)**: 3.2A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package type**: SOT23-6
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Domain and module applications：
SI3430DV-T1-GE3-VB MOSFET Applications and Modules
1. **Power Management System**
SI3430DV-T1-GE3-VB has a wide range of applications in power management systems, especially in DC-DC converters and power supply voltage regulator modules. In these systems, MOSFET can be used as a switching element for voltage conversion, providing efficient power conversion and reducing energy loss. Its low on-resistance characteristics make it very suitable for high-efficiency power supply and high-power applications, especially in battery-powered systems to extend the battery life of the device.
2. **Electric Drive System**
This MOSFET is suitable for power switch modules in electric drive systems, especially in medium-voltage electric tools, electric toys and electric equipment. MOSFET can be used as an efficient switching element to control the start, stop and speed regulation of the motor. Its high withstand voltage capability and low on-resistance help improve the efficiency of the electric drive system and reduce energy loss.
3. **Load switch applications**
In load switch applications, SI3430DV-T1-GE3-VB can be used to control the switching and switching of loads, such as for battery management, power switches and other intelligent power modules. Its high-efficiency switching and low-power consumption characteristics enable it to provide stable and reliable performance in load control systems, especially suitable for low-power portable devices and other convenient battery management systems.
4. **Automotive electronic systems**
In the field of automotive electronics, SI3430DV-T1-GE3-VB can be used as a switching element in power management modules, especially for applications such as vehicle battery management, LED lamp driving, and vehicle power converters. Its high voltage resistance and low power consumption characteristics are very suitable for high-efficiency power control in automotive electronic systems, which can ensure the stability and efficient operation of the vehicle electrical system.
5. **Consumer Electronics**
In consumer electronics, such as smartphones, tablets, portable speakers, etc., SI3430DV-T1-GE3-VB can be used as a switching element in power management circuits. These devices usually require efficient battery management and power conversion systems, and the low on-resistance and high switching efficiency of SI3430DV-T1-GE3-VB can help improve the energy efficiency of the equipment and extend the service life of the equipment.
6. **Industrial Control Systems**
In industrial control systems, SI3430DV-T1-GE3-VB can be used as a switching element for power drive systems and automation control systems. The high voltage resistance and high current carrying capacity of this MOSFET make it very suitable for power systems that control high-power loads, especially for high-efficiency, high-power density applications.
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SI3430DV-T1-GE3-VB MOSFET provides low on-resistance, high switching efficiency and high voltage tolerance, and is widely used in power management, DC-DC conversion, load switching, electric drive systems and other applications. Its high efficiency and low power consumption make it an ideal power switch component in modern electronic devices.
1. **Power Management System**
SI3430DV-T1-GE3-VB has a wide range of applications in power management systems, especially in DC-DC converters and power supply voltage regulator modules. In these systems, MOSFET can be used as a switching element for voltage conversion, providing efficient power conversion and reducing energy loss. Its low on-resistance characteristics make it very suitable for high-efficiency power supply and high-power applications, especially in battery-powered systems to extend the battery life of the device.
2. **Electric Drive System**
This MOSFET is suitable for power switch modules in electric drive systems, especially in medium-voltage electric tools, electric toys and electric equipment. MOSFET can be used as an efficient switching element to control the start, stop and speed regulation of the motor. Its high withstand voltage capability and low on-resistance help improve the efficiency of the electric drive system and reduce energy loss.
3. **Load switch applications**
In load switch applications, SI3430DV-T1-GE3-VB can be used to control the switching and switching of loads, such as for battery management, power switches and other intelligent power modules. Its high-efficiency switching and low-power consumption characteristics enable it to provide stable and reliable performance in load control systems, especially suitable for low-power portable devices and other convenient battery management systems.
4. **Automotive electronic systems**
In the field of automotive electronics, SI3430DV-T1-GE3-VB can be used as a switching element in power management modules, especially for applications such as vehicle battery management, LED lamp driving, and vehicle power converters. Its high voltage resistance and low power consumption characteristics are very suitable for high-efficiency power control in automotive electronic systems, which can ensure the stability and efficient operation of the vehicle electrical system.
5. **Consumer Electronics**
In consumer electronics, such as smartphones, tablets, portable speakers, etc., SI3430DV-T1-GE3-VB can be used as a switching element in power management circuits. These devices usually require efficient battery management and power conversion systems, and the low on-resistance and high switching efficiency of SI3430DV-T1-GE3-VB can help improve the energy efficiency of the equipment and extend the service life of the equipment.
6. **Industrial Control Systems**
In industrial control systems, SI3430DV-T1-GE3-VB can be used as a switching element for power drive systems and automation control systems. The high voltage resistance and high current carrying capacity of this MOSFET make it very suitable for power systems that control high-power loads, especially for high-efficiency, high-power density applications.
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SI3430DV-T1-GE3-VB MOSFET provides low on-resistance, high switching efficiency and high voltage tolerance, and is widely used in power management, DC-DC conversion, load switching, electric drive systems and other applications. Its high efficiency and low power consumption make it an ideal power switch component in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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