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Si3407DV-T1-GE3-VB Product details
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**Si3407DV-T1-GE3** is a single P-channel MOSFET in SOT23-6 package. The device has a maximum drain-source voltage (V_DS) of -30V, a gate-source voltage (V_GS) of ±20V, a threshold voltage (V_th) of -1.7V, and a low on-resistance (R_DS(ON)) of 54mΩ at V_GS = 4.5V and 49mΩ at V_GS = 10V. The maximum drain current (I_D) is -4.8A, and Trench technology is used for excellent efficiency and thermal management capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Product parameters:
- **Package: ** SOT23-6
- **Configuration: ** Single P channel
- **V_DS: ** -30V
- **V_GS: ** ±20V
- **V_th: ** -1.7V
- **R_DS(ON): ** 54mΩ at V_GS = 4.5V, 49mΩ at V_GS = 10V
- **I_D (max): ** -4.8A
- **Technology: ** Trench technology
- **Package: ** SOT23-6
- **Configuration: ** Single P channel
- **V_DS: ** -30V
- **V_GS: ** ±20V
- **V_th: ** -1.7V
- **R_DS(ON): ** 54mΩ at V_GS = 4.5V, 49mΩ at V_GS = 10V
- **I_D (max): ** -4.8A
- **Technology: ** Trench technology
Domain and module applications：
Application areas:
Due to its low R_DS(ON) characteristics, this MOSFET is very suitable for high-efficiency power management applications. For example, in portable electronic devices (such as smartphones, tablets, wearable devices, etc.), low on-resistance can effectively reduce power loss and increase battery life. It is also suitable for use in DC-DC converters, load switches, and battery management systems (BMS), which can optimize power conversion and battery charging and discharging efficiency.
In addition, Si3407DV-T1-GE3 is also widely used in LED driving, overcurrent protection, and automotive electronic systems, especially in low-voltage, high-efficiency power management. It can also be used for reverse current control and switching power supply systems, showing its advantages in high-density, space-constrained designs by reducing switching losses and improving the overall efficiency of the system.
Due to its low R_DS(ON) characteristics, this MOSFET is very suitable for high-efficiency power management applications. For example, in portable electronic devices (such as smartphones, tablets, wearable devices, etc.), low on-resistance can effectively reduce power loss and increase battery life. It is also suitable for use in DC-DC converters, load switches, and battery management systems (BMS), which can optimize power conversion and battery charging and discharging efficiency.
In addition, Si3407DV-T1-GE3 is also widely used in LED driving, overcurrent protection, and automotive electronic systems, especially in low-voltage, high-efficiency power management. It can also be used for reverse current control and switching power supply systems, showing its advantages in high-density, space-constrained designs by reducing switching losses and improving the overall efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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