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SI3403DV-T1-GE3-VB Product details
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Product Introduction:
SI3403DV-T1-GE3 is a single P-channel MOSFET from Vishay, packaged in SOT23-6, with a drain-source voltage (VDS) of -30V and a maximum drain current (ID) of -4.8A. This MOSFET uses Trench technology and has a lower on-resistance (RDS(ON) = 54mΩ@VGS=4.5V, 49mΩ@VGS=10V), suitable for applications requiring lower on-resistance, higher current capacity, and medium and low voltage operation. The threshold voltage (Vth) of SI3403DV-T1-GE3 is -1.7V, suitable for negative voltage switches and power management systems. This MOSFET has a wide range of applications in low power consumption, low voltage load switching, reverse voltage protection and other fields.
SI3403DV-T1-GE3 is a single P-channel MOSFET from Vishay, packaged in SOT23-6, with a drain-source voltage (VDS) of -30V and a maximum drain current (ID) of -4.8A. This MOSFET uses Trench technology and has a lower on-resistance (RDS(ON) = 54mΩ@VGS=4.5V, 49mΩ@VGS=10V), suitable for applications requiring lower on-resistance, higher current capacity, and medium and low voltage operation. The threshold voltage (Vth) of SI3403DV-T1-GE3 is -1.7V, suitable for negative voltage switches and power management systems. This MOSFET has a wide range of applications in low power consumption, low voltage load switching, reverse voltage protection and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
- **Model**: SI3403DV-T1-GE3
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating Temperature Range**: -55°C to +150°C
- **Application**: Load switch, reverse voltage protection, low voltage power management, battery protection circuit, etc.
- **Model**: SI3403DV-T1-GE3
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating Temperature Range**: -55°C to +150°C
- **Application**: Load switch, reverse voltage protection, low voltage power management, battery protection circuit, etc.
Domain and module applications：
Application fields and module examples:
1. **Load switching and power management**:
Due to its low RDS(ON) and high current carrying capacity, SI3403DV-T1-GE3 is suitable for load switching circuits, especially current switching in low voltage applications. This MOSFET can provide efficient switching operation in power management systems, reduce energy loss, and improve the energy efficiency of the system. It is widely used in mobile devices, battery-powered systems, and low-power power management modules.
2. **Reverse voltage protection**:
This MOSFET can be used in reverse voltage protection circuits in power modules. When the power connection is reversed, SI3403DV-T1-GE3 can quickly cut off the current flow to prevent the system from being damaged by reverse voltage. It is suitable for devices that are extremely sensitive to voltage, such as smart battery chargers and solar panel interfaces.
3. **Battery protection circuit**:
In battery management systems, SI3403DV-T1-GE3 can be used as a protection MOSFET to protect batteries from overvoltage, overcurrent, and reverse current. Its high withstand voltage (-30V) and low on-resistance enable it to provide reliable and stable performance in battery protection circuits, especially for lithium battery protection and battery monitoring applications.
4. **Low voltage switching applications**:
SI3403DV-T1-GE3 excels in low voltage switching applications, such as in small appliances, smart devices, embedded systems and low voltage sensors that control battery power. The MOSFET is able to provide efficient, low-power switching operation, extend battery life, and operate stably in low voltage circuits that require fast response.
5. **DC-DC converters and power regulation**:
SI3403DV-T1-GE3 MOSFET can be used as a key switching element in DC-DC converters and other power regulation modules. Its low RDS(ON) and good switching characteristics enable it to provide low-loss, high-efficiency operation during power regulation, suitable for a wide range of power conversion applications.
6. **Automotive electrical systems**:
Due to its durability and high temperature operating range (-55°C to +150°C), SI3403DV-T1-GE3 is also suitable for automotive electronic systems, such as low-voltage power management, vehicle-mounted sensor systems, automotive load switches, etc. It can work stably in high temperature environments and adapt to the reliability requirements of vehicle-mounted electrical equipment.
Summary: SI3403DV-T1-GE3 MOSFET is suitable for various low-voltage, high-efficiency power management, battery protection and switching applications due to its high withstand voltage (-30V), low on-resistance (RDS(ON)) and medium current (-4.8A) characteristics. It performs well in load switching, reverse voltage protection, battery management and low-power devices, and is especially suitable for small, power-intensive electronic products and portable devices.
1. **Load switching and power management**:
Due to its low RDS(ON) and high current carrying capacity, SI3403DV-T1-GE3 is suitable for load switching circuits, especially current switching in low voltage applications. This MOSFET can provide efficient switching operation in power management systems, reduce energy loss, and improve the energy efficiency of the system. It is widely used in mobile devices, battery-powered systems, and low-power power management modules.
2. **Reverse voltage protection**:
This MOSFET can be used in reverse voltage protection circuits in power modules. When the power connection is reversed, SI3403DV-T1-GE3 can quickly cut off the current flow to prevent the system from being damaged by reverse voltage. It is suitable for devices that are extremely sensitive to voltage, such as smart battery chargers and solar panel interfaces.
3. **Battery protection circuit**:
In battery management systems, SI3403DV-T1-GE3 can be used as a protection MOSFET to protect batteries from overvoltage, overcurrent, and reverse current. Its high withstand voltage (-30V) and low on-resistance enable it to provide reliable and stable performance in battery protection circuits, especially for lithium battery protection and battery monitoring applications.
4. **Low voltage switching applications**:
SI3403DV-T1-GE3 excels in low voltage switching applications, such as in small appliances, smart devices, embedded systems and low voltage sensors that control battery power. The MOSFET is able to provide efficient, low-power switching operation, extend battery life, and operate stably in low voltage circuits that require fast response.
5. **DC-DC converters and power regulation**:
SI3403DV-T1-GE3 MOSFET can be used as a key switching element in DC-DC converters and other power regulation modules. Its low RDS(ON) and good switching characteristics enable it to provide low-loss, high-efficiency operation during power regulation, suitable for a wide range of power conversion applications.
6. **Automotive electrical systems**:
Due to its durability and high temperature operating range (-55°C to +150°C), SI3403DV-T1-GE3 is also suitable for automotive electronic systems, such as low-voltage power management, vehicle-mounted sensor systems, automotive load switches, etc. It can work stably in high temperature environments and adapt to the reliability requirements of vehicle-mounted electrical equipment.
Summary: SI3403DV-T1-GE3 MOSFET is suitable for various low-voltage, high-efficiency power management, battery protection and switching applications due to its high withstand voltage (-30V), low on-resistance (RDS(ON)) and medium current (-4.8A) characteristics. It performs well in load switching, reverse voltage protection, battery management and low-power devices, and is especially suitable for small, power-intensive electronic products and portable devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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